These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

156 related articles for article (PubMed ID: 10000439)

  • 1. Triply resonant Raman scattering via nonequilibrium phonons in GaAs quantum wells.
    Liu Y; Sooryakumar R; Koteles ES; Elman B
    Phys Rev B Condens Matter; 1992 Mar; 45(12):6769-6775. PubMed ID: 10000439
    [No Abstract]   [Full Text] [Related]  

  • 2. Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells.
    Tsen KT; Joshi RP; Ferry DK; Morkoc H
    Phys Rev B Condens Matter; 1989 Jan; 39(2):1446-1449. PubMed ID: 9948351
    [No Abstract]   [Full Text] [Related]  

  • 3. Doubly and triply resonant Raman scattering by LO phonons in GaAs/AlAs superlattices.
    Alexandrou A; Cardona M; Ploog K
    Phys Rev B Condens Matter; 1988 Jul; 38(3):2196-2199. PubMed ID: 9946517
    [No Abstract]   [Full Text] [Related]  

  • 4. Mechanisms for the generation of coherent longitudinal-optical phonons in GaAs /AlGaAs multiple quantum wells.
    Yee KJ; Lim YS; Dekorsy T; Kim DS
    Phys Rev Lett; 2001 Feb; 86(8):1630-3. PubMed ID: 11290210
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Resonant Raman line shape of optic phonons in GaAs/AlAs multiple quantum wells.
    Shields AJ; Cardona M; Eberl K
    Phys Rev Lett; 1994 Jan; 72(3):412-415. PubMed ID: 10056424
    [No Abstract]   [Full Text] [Related]  

  • 6. Raman scattering due to interface optical phonons in GaAs/AlAs multiple quantum wells.
    Shields AJ; Chamberlain MP; Cardona M; Eberl K
    Phys Rev B Condens Matter; 1995 Jun; 51(24):17728-17739. PubMed ID: 9978805
    [No Abstract]   [Full Text] [Related]  

  • 7. Homogeneous-linewidth dependence of resonant Raman scattering in GaAs quantum wells.
    Shields AJ; Smith GO; Mayer EJ; Eccleston R; Kuhl J; Cardona M; Ploog K
    Phys Rev B Condens Matter; 1993 Dec; 48(23):17338-17342. PubMed ID: 10008344
    [No Abstract]   [Full Text] [Related]  

  • 8. Resonant Raman scattering in GaAs-Ga1-xAlxAs quantum wells in an electric field.
    Tejedor C; Calleja JM; Brey L; Vina L; Mendez EE; Wang WI; Staines M; Cardona M
    Phys Rev B Condens Matter; 1987 Oct; 36(11):6054-6057. PubMed ID: 9942287
    [No Abstract]   [Full Text] [Related]  

  • 9. Effects of the exciton continuum on resonant Raman scattering in GaAs quantum wells.
    Wen G; Chang YC
    Phys Rev B Condens Matter; 1992 Jun; 45(23):13562-13565. PubMed ID: 10001444
    [No Abstract]   [Full Text] [Related]  

  • 10. Electric field dependence of the resonant Raman scattering in GaAs-Ga1-xAlxAs quantum wells.
    Tejedor C; Hernández-Cabrera A
    Phys Rev B Condens Matter; 1986 May; 33(10):7389-7391. PubMed ID: 9938101
    [No Abstract]   [Full Text] [Related]  

  • 11. Resonant Raman scattering in p-type GaAs-AlxGa1-xAs-AlAs quantum wells.
    Suemoto T; Fasol G; Ploog K
    Phys Rev B Condens Matter; 1986 Oct; 34(8):6034-6037. PubMed ID: 9940472
    [No Abstract]   [Full Text] [Related]  

  • 12. Doubly resonant LO-phonon Raman scattering observed with GaAs-AlxGa1-xAs quantum wells.
    Kleinman DA; Miller RC; Gossard AC
    Phys Rev B Condens Matter; 1987 Jan; 35(2):664-674. PubMed ID: 9941450
    [No Abstract]   [Full Text] [Related]  

  • 13. Resonant Raman scattering due to bound-carrier spin flip in GaAs/AlxGa1-xAs quantum wells.
    Sapega VF; Ruf T; Cardona M; Ploog K; Ivchenko EL; Mirlin DN
    Phys Rev B Condens Matter; 1994 Jul; 50(4):2510-2519. PubMed ID: 9976472
    [No Abstract]   [Full Text] [Related]  

  • 14. Resonant Raman scattering by acceptors in GaAs/AlxGa1-xAs multiple quantum wells: A probe of exciton localization.
    Brener I; Cohen E; Ron A; Pfeiffer L
    Phys Rev B Condens Matter; 1990 Dec; 42(17):11035-11041. PubMed ID: 9995382
    [No Abstract]   [Full Text] [Related]  

  • 15. Effects of nonequilibrium phonons on the energy relaxation and recombination lifetime of photogenerated carriers in undoped GaAs quantum wells.
    Shum K; Junnarkar MR; Chao HS; Alfano RR; Morkoç H
    Phys Rev B Condens Matter; 1988 May; 37(15):8923-8931. PubMed ID: 9944263
    [No Abstract]   [Full Text] [Related]  

  • 16. Doubly and triply resonant Raman scattering via electron-two-phonon and impurity-induced Fröhlich interactions in uniaxially stressed GaAs.
    Alexandrou A; Trallero-Giner C; Kanellis G; Cardona M
    Phys Rev B Condens Matter; 1989 Jul; 40(2):1013-1022. PubMed ID: 9991924
    [No Abstract]   [Full Text] [Related]  

  • 17. Triply resonant Raman scattering by LO phonons in a Wannier-Stark ladder.
    Schneider H; Wagner J; Fujiwara K; Ploog K
    Phys Rev B Condens Matter; 1990 Dec; 42(17):11430-11433. PubMed ID: 9995448
    [No Abstract]   [Full Text] [Related]  

  • 18. Spin-orbit splitting in single-layer MoS2 revealed by triply resonant Raman scattering.
    Sun L; Yan J; Zhan D; Liu L; Hu H; Li H; Tay BK; Kuo JL; Huang CC; Hewak DW; Lee PS; Shen ZX
    Phys Rev Lett; 2013 Sep; 111(12):126801. PubMed ID: 24093287
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Resonant Raman scattering by phonons in a strong magnetic field: GaAs.
    Ambrazevicius G; Cardona M; Merlin R
    Phys Rev Lett; 1987 Aug; 59(6):700-703. PubMed ID: 10035848
    [No Abstract]   [Full Text] [Related]  

  • 20. Raman study of interface phonons in GaAs/AlAs quantum wells: Resonance with the e2-h2 exciton.
    Fu LP; Schmiedel T; Petrou A; Dutta M; Newman PG; Stroscio MA
    Phys Rev B Condens Matter; 1992 Sep; 46(11):7196-7199. PubMed ID: 10002431
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 8.