These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

113 related articles for article (PubMed ID: 10001568)

  • 1. Field localization of electrons in In0.53Ga0.47As/In0.82Ga0.18As0.40P0.60 quantum wells studied by electroabsorption.
    Weiser G; Satzke K; Schlichtherle B; Goldstein L; Perales A
    Phys Rev B Condens Matter; 1992 Jun; 45(24):14376-14379. PubMed ID: 10001568
    [No Abstract]   [Full Text] [Related]  

  • 2. Electroabsorption in In0.53Ga0.47As/In0.52Al0.48As asymmetric coupled quantum wells grown on InP substrates.
    Leavitt RP; Little JW; Horst SC
    Phys Rev B Condens Matter; 1989 Aug; 40(6):4183-4186. PubMed ID: 9992395
    [No Abstract]   [Full Text] [Related]  

  • 3. Fabrication and Characterization of In
    Shin SH; Shim JP; Jang H; Jang JH
    Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677117
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles.
    Sauer R; Nilsson S; Roentgen P; Heuberger W; Graf V; Hangleiter A; Spycher R
    Phys Rev B Condens Matter; 1992 Oct; 46(15):9525-9537. PubMed ID: 10002761
    [No Abstract]   [Full Text] [Related]  

  • 5. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.
    Kong L; Song Y; Kim JD; Yu L; Wasserman D; Chim WK; Chiam SY; Li X
    ACS Nano; 2017 Oct; 11(10):10193-10205. PubMed ID: 28880533
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Intersubband absorption in In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells.
    Asai H; Kawamura Y
    Phys Rev B Condens Matter; 1991 Feb; 43(6):4748-4759. PubMed ID: 9997843
    [No Abstract]   [Full Text] [Related]  

  • 7. Optical study of the electronic states of In0.53Ga0.47As/In0.52Al0.48As quantum wells in high electric fields.
    Satzke K; Weiser G; Stolz W; Ploog K
    Phys Rev B Condens Matter; 1991 Jan; 43(3):2263-2271. PubMed ID: 9997500
    [No Abstract]   [Full Text] [Related]  

  • 8. Enhanced inelastic scattering and localization of excitons in In0.53Ga0.47As/InP alloy quantum wells.
    Hegarty J; Tai K; Tsang WT
    Phys Rev B Condens Matter; 1988 Oct; 38(11):7843-7845. PubMed ID: 9945524
    [No Abstract]   [Full Text] [Related]  

  • 9. Magnetic-field-induced enhancement of exciton oscillator strength in In0.53Ga0.47As/InP quantum wells.
    Sugawara M
    Phys Rev B Condens Matter; 1992 May; 45(19):11423-11425. PubMed ID: 10001086
    [No Abstract]   [Full Text] [Related]  

  • 10. Enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs
    Naseem ; Ahmad Z; Chao RL; Chang HS; Ni CJ; Chen HS; Huang JJ; Chou E; Jan YH; Shi JW
    Opt Express; 2019 May; 27(11):15495-15504. PubMed ID: 31163745
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Diamagnetic shift and oscillator strength of two-dimensional excitons under a magnetic field in In0.53Ga0.47As/InP quantum wells.
    Sugawara M; Okazaki N; Fujii T; Yamazaki S
    Phys Rev B Condens Matter; 1993 Sep; 48(12):8848-8856. PubMed ID: 10007102
    [No Abstract]   [Full Text] [Related]  

  • 12. Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In
    Yoo HB; Kim SK; Kim J; Yu J; Choi SJ; Kim DH; Kim DM
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4287-4291. PubMed ID: 31968459
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Multi-dimensional optimization of In
    Gamel MMA; Ker PJ; Lee HJ; Rashid WESWA; Hannan MA; David JPR; Jamaludin MZ
    Sci Rep; 2021 Apr; 11(1):7741. PubMed ID: 33833263
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electron mobility in In0.53Ga0.47As quantum wells.
    Chattopadhyay D
    Phys Rev B Condens Matter; 1988 Dec; 38(18):13429-13431. PubMed ID: 9946330
    [No Abstract]   [Full Text] [Related]  

  • 15. Barrier-controlled thermalization in In0.53Ga0.47As/InP quantum wells.
    Cebulla U; Forchel A; Bacher G; Grützmacher D; Tsang WT; Razeghi M
    Phys Rev B Condens Matter; 1989 Nov; 40(14):10009-10012. PubMed ID: 9991540
    [No Abstract]   [Full Text] [Related]  

  • 16. Effects of H
    Choi S; An Y; Lee C; Song J; Nguyen MC; Byun YC; Choi R; McIntyre PC; Kim H
    Sci Rep; 2017 Aug; 7(1):9769. PubMed ID: 28852035
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electric subbands in an In0.65Ga0.35As quantum well between In0.52Al0.48As and In0.53Ga0.47As potential barriers.
    Kim TW; Lee JI; Kang KN; Lee KS; Yoo KH
    Phys Rev B Condens Matter; 1991 Dec; 44(23):12891-12893. PubMed ID: 9999468
    [No Abstract]   [Full Text] [Related]  

  • 18. Influence of exciton ionization on recombination dynamics in In0.53Ga0.47As/InP quantum wells.
    Michler P; Hangleiter A; Moritz A; Härle V; Scholz F
    Phys Rev B Condens Matter; 1993 Jan; 47(3):1671-1674. PubMed ID: 10006194
    [No Abstract]   [Full Text] [Related]  

  • 19. Correlation between Optical Localization-State and Electrical Deep-Level State in In
    Ahn IH; Kim DY; Lee S
    Nanomaterials (Basel); 2021 Feb; 11(3):. PubMed ID: 33652753
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Exciton dynamics for extended monolayer islands in thin In0.53Ga0.47As/InP quantum wells.
    Bacher G; Kovac J; Streubel K; Schweizer H; Scholz F
    Phys Rev B Condens Matter; 1992 Apr; 45(16):9136-9144. PubMed ID: 10000776
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 6.