These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
164 related articles for article (PubMed ID: 10003381)
1. Electron-electron interaction and intersubband absorption coefficient in a GaAs/AlxGa1-xAs quantum well. von Allmen P Phys Rev B Condens Matter; 1992 Nov; 46(20):13351-13356. PubMed ID: 10003381 [No Abstract] [Full Text] [Related]
2. Compensation effects on optically pumped intersubband absorption in GaAs/AlxGa1-xAs multiple-quantum-well structures. Li WJ; McCombe BD; Chambers FA; Devane GP; Ralston J; Wicks G Phys Rev B Condens Matter; 1990 Dec; 42(18):11953-11956. PubMed ID: 9995511 [No Abstract] [Full Text] [Related]
3. Absorption saturation of intersubband optical transitions in GaAs/AlxGa1-xAs multiple quantum wells. Cui Df; Chen Zh; Pan Sh; Lu Hb; Yang Gz Phys Rev B Condens Matter; 1993 Mar; 47(11):6755-6757. PubMed ID: 10004652 [No Abstract] [Full Text] [Related]
4. Influence of electron temperature and carrier concentration on electron-LO-phonon intersubband scattering in wide GaAs/AlxGa1-xAs quantum wells. Lee S; Galbraith I; Pidgeon CR Phys Rev B Condens Matter; 1995 Jul; 52(3):1874-1881. PubMed ID: 9981255 [No Abstract] [Full Text] [Related]
5. Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells. Huang D; Gumbs G; Manasreh MO Phys Rev B Condens Matter; 1995 Nov; 52(19):14126-14130. PubMed ID: 9980632 [No Abstract] [Full Text] [Related]
6. Comment on "Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells". Zaluzny M Phys Rev B Condens Matter; 1996 Oct; 54(15):10978-10979. PubMed ID: 9984897 [No Abstract] [Full Text] [Related]
7. Reply to "Comment on 'Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells"'. Huang D; Manasreh MO; Gumbs G Phys Rev B Condens Matter; 1996 Oct; 54(15):10980-10981. PubMed ID: 9984898 [No Abstract] [Full Text] [Related]
8. Observation of GaAs--AlxGa1--xAs heterostructures and quantum-well-wire structures using backscattered electron image. Hirayama Y; Okamoto H J Electron Microsc Tech; 1989 May; 12(1):60-4. PubMed ID: 2754502 [TBL] [Abstract][Full Text] [Related]
9. Consequences of subband nonparabolicity on intersubband excitations in p-doped GaAs/AlxGa1-xAs quantum wells. Kirchner M; Schüller C; Kraus J; Schaack G; Panzlaff K; Weimann G Phys Rev B Condens Matter; 1993 Apr; 47(15):9706-9709. PubMed ID: 10005041 [No Abstract] [Full Text] [Related]
10. Monte Carlo simulation of intersubband relaxation in wide, uniformly doped GaAs/AlxGa1-xAs quantum wells. Dür M; Goodnick SM; Lugli P Phys Rev B Condens Matter; 1996 Dec; 54(24):17794-17804. PubMed ID: 9985911 [No Abstract] [Full Text] [Related]
11. Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells. Buyanov AV; Ferreira AC; Söderström E; Buyanova IA; Holtz PO; Sernelius B; Monemar B; Sundaram M; Campman K; Merz JL; Gossard AC Phys Rev B Condens Matter; 1996 Jan; 53(3):1357-1361. PubMed ID: 9983595 [No Abstract] [Full Text] [Related]
12. Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation. Hartig M; Haacke S; Deveaud B; Rota L Phys Rev B Condens Matter; 1996 Nov; 54(20):R14269-R14272. PubMed ID: 9985504 [No Abstract] [Full Text] [Related]
13. Electron mobilities in modulation-doped AlxGa1-xAs/GaAs and pseudomorphic AlxGa1-xAs/InyGa1-yAs quantum-well structures. Inoue K; Matsuno T Phys Rev B Condens Matter; 1993 Feb; 47(7):3771-3778. PubMed ID: 10006481 [No Abstract] [Full Text] [Related]
14. Infrared absorption due to two-dimensional-electron-gas collective excitation in GaAs/AlxGa1-xAs multiple-quantum-well structures. Zhu QS; Wang XB; Du QG; Zhong ZT; Xing YR Phys Rev B Condens Matter; 1995 Jul; 52(3):1848-1851. PubMed ID: 9981252 [No Abstract] [Full Text] [Related]
15. Microscopic calculation of the electron-optical-phonon interaction in ultrathin GaAs/AlxGa1-xAs alloy quantum-well systems. Lee I; Goodnick SM; Gulia M; Molinari E; Lugli P Phys Rev B Condens Matter; 1995 Mar; 51(11):7046-7057. PubMed ID: 9977263 [No Abstract] [Full Text] [Related]
16. Temperature dependence of photoemission characteristics from Al Wang K; Wang G; Chang B; Tran H; Fu R Appl Opt; 2017 Jul; 56(21):6015-6021. PubMed ID: 29047924 [TBL] [Abstract][Full Text] [Related]
17. Picosecond Raman studies of the optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. Tsen KT; Morkoç H Phys Rev B Condens Matter; 1988 Apr; 37(12):7137-7139. PubMed ID: 9943996 [No Abstract] [Full Text] [Related]
18. Resonant electron-optical-phonon interactions for impurities in GaAs and GaAs/AlxGa1-xAs quantum wells and superlattices. Cheng J; McCombe BD; Brozak G; Schaff W Phys Rev B Condens Matter; 1993 Dec; 48(23):17243-17254. PubMed ID: 10008333 [No Abstract] [Full Text] [Related]
19. Effect of graded bandgap structure on photoelectric performance of transmission-mode Al Feng C; Zhang Y; Liu J; Qian Y; Liu X; Shi F; Cheng H Appl Opt; 2017 Nov; 56(32):9044-9049. PubMed ID: 29131191 [TBL] [Abstract][Full Text] [Related]
20. Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells. Reynolds DC; Evans KR; Stutz CE; Yu PW Phys Rev B Condens Matter; 1991 Feb; 43(5):4244-4248. PubMed ID: 9997775 [No Abstract] [Full Text] [Related] [Next] [New Search]