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13. Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells. Ferreira AC; Holtz PO; Monemar B; Sundaram M; Campman K; Merz JL; Gossard AC Phys Rev B Condens Matter; 1996 Dec; 54(23):16994-16997. PubMed ID: 9985830 [No Abstract] [Full Text] [Related]
14. Localization-dependent thermalization of excitons in GaAs/AlxGa1-xAs quantum wells. Colvard C; Bimberg D; Alavi K; Maierhofer C; Nouri N Phys Rev B Condens Matter; 1989 Feb; 39(5):3419-3422. PubMed ID: 9948651 [No Abstract] [Full Text] [Related]
15. Photoluminescence due to positively charged excitons in undoped GaAs/AlxGa1-xAs quantum wells. Osborne JL; Shields AJ; Pepper M; Bolton FM; Ritchie DA Phys Rev B Condens Matter; 1996 May; 53(19):13002-13010. PubMed ID: 9982977 [No Abstract] [Full Text] [Related]
16. Dynamics and spin relaxation of excitons in GaAs/AlxGa1-xAs quantum wells. Frommer A; Ron A; Cohen E; Kash JA; Pfeiffer LN Phys Rev B Condens Matter; 1994 Oct; 50(16):11833-11839. PubMed ID: 9975321 [No Abstract] [Full Text] [Related]
17. Coherent generation and interference of excitons and biexcitons in GaAs/AlxGa1-xAs quantum wells. Pantke K; Oberhauser D; Lyssenko VG; Hvam JM; Weimann G Phys Rev B Condens Matter; 1993 Jan; 47(4):2413-2416. PubMed ID: 10006286 [No Abstract] [Full Text] [Related]
18. Fermi enhancement and breakdown of the parity selection rule in the luminescence spectra of GaAs/AlxGa1-xAs modulation-doped quantum wells. Chen YF; Lin LY; Shen JL; Liu DW Phys Rev B Condens Matter; 1992 Nov; 46(19):12433-12438. PubMed ID: 10003160 [No Abstract] [Full Text] [Related]