These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
139 related articles for article (PubMed ID: 10005172)
1. Effects of an electric field on the continuum energy levels in InxGa1-xAs/GaAs quantum wells terminated with thin cap layers. Fafard S; Fortin E; Roth AP Phys Rev B Condens Matter; 1993 Apr; 47(16):10588-10595. PubMed ID: 10005172 [No Abstract] [Full Text] [Related]
2. Oscillatory behavior of the continuum states in InxGa1-xAs/GaAs quantum wells due to capping-barrier layers of finite size. Fafard S; Fortin E; Roth AP Phys Rev B Condens Matter; 1992 Jun; 45(23):13769-13772. PubMed ID: 10001481 [No Abstract] [Full Text] [Related]
3. Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells. Reynolds DC; Evans KR; Stutz CE; Yu PW Phys Rev B Condens Matter; 1991 Feb; 43(5):4244-4248. PubMed ID: 9997775 [No Abstract] [Full Text] [Related]
4. Exciton binding energy in InxGa1-xAs/GaAs strained quantum wells. Hou HQ; Segawa Y; Aoyagi Y; Namba S; Zhou JM Phys Rev B Condens Matter; 1990 Jul; 42(2):1284-1289. PubMed ID: 9995539 [No Abstract] [Full Text] [Related]
5. Binding energy of shallow acceptors in InxGa1-xAs/GaAs strained quantum wells. Roth AP; Morris D; Masut RA; Lacelle C; Jackman JA Phys Rev B Condens Matter; 1988 Oct; 38(11):7877-7880. PubMed ID: 9945533 [No Abstract] [Full Text] [Related]
6. Localization effects, energy relaxation, and electron and hole dispersion in selectively doped n-type AlyGa1-yAs/InxGa1-xAs/GaAs quantum wells. Butov LV; Kulakovskii VD; Andersson TG; Chen ZG Phys Rev B Condens Matter; 1990 Nov; 42(15):9472-9479. PubMed ID: 9995184 [No Abstract] [Full Text] [Related]
7. Binding energies and envelope functions of light-hole excitons in GaAs/InxGa1-xAs/GaAs strained quantum wells. Piao ZS; Nakayama M; Nishimura H Phys Rev B Condens Matter; 1996 Oct; 54(15):10312-10315. PubMed ID: 9984811 [No Abstract] [Full Text] [Related]
8. Direct coupling of heavy-hole free excitons in InxGa1-xAs/GaAs quantum wells with free excitons in the GaAs barrier. Reynolds DC; Evans KR; Bajaj KK; Jogai B; Stutz CE; Yu PW Phys Rev B Condens Matter; 1991 Jan; 43(2):1871-1874. PubMed ID: 9997454 [No Abstract] [Full Text] [Related]
9. Magnetoluminescence study of many-body effects in a dense electron-hole plasma of strained InxGa1-xAs/GaAs quantum wells. Butov LV; Egorov VD; Kulakovskii VD; Andersson TG Phys Rev B Condens Matter; 1992 Dec; 46(23):15156-15162. PubMed ID: 10003630 [No Abstract] [Full Text] [Related]
10. Photoreflectance and piezophotoreflectance studies of strained-layer InxGa1-xAs-GaAs quantum wells. Arnaud G; Allègre J; Lefebvre P; Mathieu H; Howard LK; Dunstan DJ Phys Rev B Condens Matter; 1992 Dec; 46(23):15290-15301. PubMed ID: 10003646 [No Abstract] [Full Text] [Related]
11. Exciton properties and optical response in InxGa1-xAs/GaAs strained quantum wells. Atanasov R; Bassani F; D'Andrea A; Tomassini N Phys Rev B Condens Matter; 1994 Nov; 50(19):14381-14388. PubMed ID: 9975660 [No Abstract] [Full Text] [Related]
12. Zeeman splitting of the excitonic recombination in InxGa1-xAs/GaAs single quantum wells. Wimbauer T; Oettinger K; Efros AL; Meyer BK; Brugger H Phys Rev B Condens Matter; 1994 Sep; 50(12):8889-8892. PubMed ID: 9974919 [No Abstract] [Full Text] [Related]
13. Thermally activated carrier escape mechanisms from InxGa1-xAs/GaAs quantum wells. Botha JR; Leitch AW Phys Rev B Condens Matter; 1994 Dec; 50(24):18147-18152. PubMed ID: 9976247 [No Abstract] [Full Text] [Related]