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23. Theoretical and experimental investigations of the electronic structure for selectively delta -doped strained InxGa1-xAs/GaAs quantum wells. Ke Ml; Westwood D; Williams RH; Godfrey MJ Phys Rev B Condens Matter; 1995 Feb; 51(8):5038-5042. PubMed ID: 9979377 [No Abstract] [Full Text] [Related]
24. Binding energies and envelope functions of light-hole excitons in GaAs/InxGa1-xAs/GaAs strained quantum wells. Piao ZS; Nakayama M; Nishimura H Phys Rev B Condens Matter; 1996 Oct; 54(15):10312-10315. PubMed ID: 9984811 [No Abstract] [Full Text] [Related]
25. Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells. Gil B; Howard LK; Dunstan DJ; Boring P; Lefebvre P Phys Rev B Condens Matter; 1992 Feb; 45(7):3906-3909. PubMed ID: 10001995 [No Abstract] [Full Text] [Related]
26. Temperature-dependent relaxation and growth phenomena in strained InxGa1-xAs layers grown on GaAs. Ekenstedt MJ; Andersson TG; Wang SM Phys Rev B Condens Matter; 1993 Aug; 48(8):5289-5299. PubMed ID: 10009047 [No Abstract] [Full Text] [Related]
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29. Influence of exciton localization on recombination line shapes: InxGa1-xAs/GaAs quantum wells as a model. Schnabel RF; Zimmermann R; Bimberg D; Nickel H; Lösch R; Schlapp W Phys Rev B Condens Matter; 1992 Oct; 46(15):9873-9876. PubMed ID: 10002817 [No Abstract] [Full Text] [Related]
30. Electro-optical effects in InxGa1-xAs/GaAs strained-layer superlattices. Fortin E; Hua BY; Roth AP Phys Rev B Condens Matter; 1989 May; 39(15):10887-10891. PubMed ID: 9947899 [No Abstract] [Full Text] [Related]
31. Band offsets for strained InxGa1-xAs/AlyGa1-yAs heterointerfaces. Arent DJ Phys Rev B Condens Matter; 1990 May; 41(14):9843-9849. PubMed ID: 9993364 [No Abstract] [Full Text] [Related]
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38. Miniband structure in InxGa1-xAs-GaAs strained-layer superlattices. Pulsford NJ; Nicholas RJ; Warburton RJ; Duggan G; Moore KJ; Woodbridge K; Roberts C Phys Rev B Condens Matter; 1991 Jan; 43(3):2246-2254. PubMed ID: 9997498 [No Abstract] [Full Text] [Related]
39. Optical investigation of a new type of valence-band configuration in InxGa1-xAs-GaAs strained superlattices. Marzin J; Charasse MN; Sermage B Phys Rev B Condens Matter; 1985 Jun; 31(12):8298-8301. PubMed ID: 9935794 [No Abstract] [Full Text] [Related]
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