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6. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. Stutzmann M; Jackson WB; Tsai CC Phys Rev B Condens Matter; 1985 Jul; 32(1):23-47. PubMed ID: 9936636 [No Abstract] [Full Text] [Related]
7. Pulsed-light-induced annealing of metastable defects in hydrogenated amorphous silicon. Yoon JH Phys Rev B Condens Matter; 1995 Apr; 51(15):10221-10223. PubMed ID: 9977709 [No Abstract] [Full Text] [Related]
8. Evidence for hydrogen motion in annealing of light-induced metastable defects in hydrogenated amorphous silicon. Jackson WB; Kakalios J Phys Rev B Condens Matter; 1988 Jan; 37(2):1020-1023. PubMed ID: 9944603 [No Abstract] [Full Text] [Related]
9. Rate equation for metastable defects in hydrogenated amorphous silicon: The form of the light-induced annealing term. Meaudre R; Meaudre M; Vignoli S Phys Rev B Condens Matter; 1994 Jan; 49(3):1716-1719. PubMed ID: 10010963 [No Abstract] [Full Text] [Related]
11. Thermally induced metastable defects in hydrogenated amorphous silicon and silicon-carbon alloy films. Xu X; Okumura A; Morimoto A; Kumeda M; Shimizu T Phys Rev B Condens Matter; 1988 Oct; 38(12):8371-8376. PubMed ID: 9945594 [No Abstract] [Full Text] [Related]
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13. Metastable paramagnetism in hydrogenated amorphous silicon: Evidence for a new class of defects in tetrahedrally bonded amorphous semiconductors. Lee C; Ohlsen WD; Taylor PC Phys Rev B Condens Matter; 1987 Aug; 36(5):2965-2968. PubMed ID: 9943201 [No Abstract] [Full Text] [Related]
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