These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

101 related articles for article (PubMed ID: 10039983)

  • 1. Comment on "Electronic structure of localized Si dangling-bond defects by tunneling spectroscopy".
    Müller JE; Daum W; Ibach H
    Phys Rev Lett; 1989 May; 62(20):2423. PubMed ID: 10039983
    [No Abstract]   [Full Text] [Related]  

  • 2. Electronic structure of localized Si dangling-bond defects by tunneling spectroscopy.
    Hamers RJ; Demuth JE
    Phys Rev Lett; 1988 Jun; 60(24):2527-2530. PubMed ID: 10038377
    [No Abstract]   [Full Text] [Related]  

  • 3. Coulomb energy determination of a single Si dangling bond.
    Nguyen TH; Mahieu G; Berthe M; Grandidier B; Delerue C; Stiévenard D; Ebert P
    Phys Rev Lett; 2010 Nov; 105(22):226404. PubMed ID: 21231404
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Engineering the electronic structure of surface dangling bond nanowires of different size and dimensionality.
    Naydenov B; Boland JJ
    Nanotechnology; 2013 Jul; 24(27):275202. PubMed ID: 23765570
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Probing the carrier capture rate of a single quantum level.
    Berthe M; Stiufiuc R; Grandidier B; Deresmes D; Delerue C; Stiévenard D
    Science; 2008 Jan; 319(5862):436-8. PubMed ID: 18079365
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Structural and electronic properties of identical-sized Zn nanoclusters grown on Si(111)-(7x7) surfaces.
    Zhou C; Xue Q; Jia J; Zhan H; Kang J
    J Chem Phys; 2009 Jan; 130(2):024701. PubMed ID: 19154044
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces.
    Pitters JL; Livadaru L; Haider MB; Wolkow RA
    J Chem Phys; 2011 Feb; 134(6):064712. PubMed ID: 21322726
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Valence surface electronic states on Ge(001).
    Radny MW; Shah GA; Schofield SR; Smith PV; Curson NJ
    Phys Rev Lett; 2008 Jun; 100(24):246807. PubMed ID: 18643613
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Electronic structure of oxygen dangling bond in glassy SiO2: the role of hyperconjugation.
    Suzuki T; Skuja L; Kajihara K; Hirano M; Kamiya T; Hosono H
    Phys Rev Lett; 2003 May; 90(18):186404. PubMed ID: 12786032
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Evidence of trigonal dangling bonds at the Ge(111)/oxide interface by electrically detected magnetic resonance.
    Paleari S; Baldovino S; Molle A; Fanciulli M
    Phys Rev Lett; 2013 May; 110(20):206101. PubMed ID: 25167431
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Nature of point defects on SiO2/Mo(112) thin films and their interaction with Au atoms.
    Martinez U; Giordano L; Pacchioni G
    J Phys Chem B; 2006 Aug; 110(34):17015-23. PubMed ID: 16927995
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Energetics and stability of dangling-bond silicon wires on H passivated Si(100).
    Robles R; Kepenekian M; Monturet S; Joachim C; Lorente N
    J Phys Condens Matter; 2012 Nov; 24(44):445004. PubMed ID: 23018314
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Dangling bond defects at Si-SiO2 interfaces: atomic structure of the P(b1) center.
    Stirling A; Pasquarello A; Charlier J; Car R
    Phys Rev Lett; 2000 Sep; 85(13):2773-6. PubMed ID: 10991230
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Magnetic ordering of dangling bond networks on hydrogen-deposited Si(111) surfaces.
    Okada S; Shiraishi K; Oshiyama A
    Phys Rev Lett; 2003 Jan; 90(2):026803. PubMed ID: 12570568
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Tip-induced reduction of the resonant tunneling current on semiconductor surfaces.
    Jelínek P; Svec M; Pou P; Perez R; Cháb V
    Phys Rev Lett; 2008 Oct; 101(17):176101. PubMed ID: 18999766
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Surface and near surface defects in δ-doped Si(1 1 1).
    Andrade DP; Miwa RH; Drevniok B; Drage P; McLean AB
    J Phys Condens Matter; 2015 Apr; 27(12):125001. PubMed ID: 25679226
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces.
    Santos I; Cazzaniga M; Onida G; Colombo L
    J Phys Condens Matter; 2014 Mar; 26(9):095001. PubMed ID: 24523359
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Electronic effects induced by single hydrogen atoms on the Ge(001) surface.
    Radny MW; Shah GA; Smith PV; Schofield SR; Curson NJ
    J Chem Phys; 2008 Jun; 128(24):244707. PubMed ID: 18601365
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Charge control of surface dangling bonds using nanoscale Schottky contacts.
    Pitters JL; Dogel IA; Wolkow RA
    ACS Nano; 2011 Mar; 5(3):1984-9. PubMed ID: 21309605
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface.
    Winn DL; Hale MJ; Grassman TJ; Kummel AC; Droopad R; Passlack M
    J Chem Phys; 2007 Feb; 126(8):084703. PubMed ID: 17343465
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.