These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
103 related articles for article (PubMed ID: 10583951)
1. Transition States Between Pyramids and Domes During Ge/Si Island Growth. Ross FM; Tromp RM; Reuter MC Science; 1999 Dec; 286(5446):1931-1934. PubMed ID: 10583951 [TBL] [Abstract][Full Text] [Related]
2. Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands. Brehm M; Lichtenberger H; Fromherz T; Springholz G Nanoscale Res Lett; 2011 Jan; 6(1):70. PubMed ID: 21711579 [TBL] [Abstract][Full Text] [Related]
3. Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes. Medeiros-Ribeiro G; Bratkovski AM; Kamins TI; Ohlberg DAA; Williams RS Science; 1998 Jan; 279(5349):353-5. PubMed ID: 9430580 [TBL] [Abstract][Full Text] [Related]
4. Asymmetric shape transitions of epitaxial quantum dots. Wei C; Spencer BJ Proc Math Phys Eng Sci; 2016 Jun; 472(2190):20160262. PubMed ID: 27436989 [TBL] [Abstract][Full Text] [Related]
6. Kinetic evolution and equilibrium morphology of strained islands. Rastelli A; Stoffel M; Tersoff J; Kar GS; Schmidt OG Phys Rev Lett; 2005 Jul; 95(2):026103. PubMed ID: 16090703 [TBL] [Abstract][Full Text] [Related]
7. In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si. Ross FM; Tersoff J; Reuter M; Legoues FK; Tromp RM Microsc Res Tech; 1998 Aug; 42(4):281-94. PubMed ID: 9779833 [TBL] [Abstract][Full Text] [Related]
8. Self-ordering of a Ge island single layer induced by Si overgrowth. Capellini G; De Seta M; Evangelisti F; Zinovyev VA; Vastola G; Montalenti F; Miglio L Phys Rev Lett; 2006 Mar; 96(10):106102. PubMed ID: 16605763 [TBL] [Abstract][Full Text] [Related]
9. Ostwald Ripening of Self-Assembled Germanium Islands on Silicon(100). Ross FM; Tersoff J; Tromp RM Microsc Microanal; 1998 May; 4(3):254-263. PubMed ID: 9767662 [TBL] [Abstract][Full Text] [Related]
10. Si/Ge intermixing during Ge Stranski-Krastanov growth. Portavoce A; Hoummada K; Ronda A; Mangelinck D; Berbezier I Beilstein J Nanotechnol; 2014; 5():2374-82. PubMed ID: 25551065 [TBL] [Abstract][Full Text] [Related]
11. A combined In situ grazing incidence small angle X-ray scattering and grazing incidence X-ray diffraction study of the growth of Ge Islands on pit-patterned Si(001) substrates. Richard MI; Schülli TU; Renaud G; Zhong ZZ; Bauer G J Nanosci Nanotechnol; 2011 Oct; 11(10):9123-8. PubMed ID: 22400312 [TBL] [Abstract][Full Text] [Related]
12. Reversible shape evolution of Ge islands on Si(001). Rastelli A; Kummer M; von Känel H Phys Rev Lett; 2001 Dec; 87(25):256101. PubMed ID: 11736588 [TBL] [Abstract][Full Text] [Related]
13. Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001). Montalenti F; Raiteri P; Migas DB; von Känel H; Rastelli A; Manzano C; Costantini G; Denker U; Schmidt OG; Kern K; Miglio L Phys Rev Lett; 2004 Nov; 93(21):216102. PubMed ID: 15601034 [TBL] [Abstract][Full Text] [Related]
14. Ge island assembly on metal-patterned Si: truncated pyramids, nanorods, and beyond. Robinson JT; Dubon OD J Nanosci Nanotechnol; 2008 Jan; 8(1):56-68. PubMed ID: 18468053 [TBL] [Abstract][Full Text] [Related]
15. Metal-induced assembly of a semiconductor island lattice: Ge truncated pyramids on Au-patterned Si. Robinson JT; Liddle JA; Minor A; Radmilovic V; Yi DO; Greaney PA; Long KN; Chrzan DC; Dubon OD Nano Lett; 2005 Oct; 5(10):2070-3. PubMed ID: 16218739 [TBL] [Abstract][Full Text] [Related]
16. Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates. Hackl F; Grydlik M; Brehm M; Groiss H; Schäffler F; Fromherz T; Bauer G Nanotechnology; 2011 Apr; 22(16):165302. PubMed ID: 21393825 [TBL] [Abstract][Full Text] [Related]
17. Sculpting semiconductor heteroepitaxial islands: from dots to rods. Robinson JT; Walko DA; Arms DA; Tinberg DS; Evans PG; Cao Y; Liddle JA; Rastelli A; Schmidt OG; Dubon OD Phys Rev Lett; 2007 Mar; 98(10):106102. PubMed ID: 17358549 [TBL] [Abstract][Full Text] [Related]
18. Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers. Norris DJ; Myronov M; Leadley DR; Walther T J Microsc; 2017 Dec; 268(3):288-297. PubMed ID: 28972660 [TBL] [Abstract][Full Text] [Related]
19. Global faceting behavior of strained Ge islands on Si. Robinson JT; Rastelli A; Schmidt O; Dubon OD Nanotechnology; 2009 Feb; 20(8):085708. PubMed ID: 19417469 [TBL] [Abstract][Full Text] [Related]
20. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM. Gangopadhyay S; Yoshimura M; Ueda K Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]