These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

311 related articles for article (PubMed ID: 11136057)

  • 1. Unique dynamic appearance of a Ge-Si ad-dimer on Si(001).
    Lu ZY; Liu F; Wang CZ; Qin XR; Swartzentruber BS; Lagally MG; Ho KM
    Phys Rev Lett; 2000 Dec; 85(26 Pt 1):5603-6. PubMed ID: 11136057
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electronic effects induced by single hydrogen atoms on the Ge(001) surface.
    Radny MW; Shah GA; Smith PV; Schofield SR; Curson NJ
    J Chem Phys; 2008 Jun; 128(24):244707. PubMed ID: 18601365
    [TBL] [Abstract][Full Text] [Related]  

  • 3. First-principles study of thermal and electron-activated dissociation of acetone on Si(001).
    Lee JH; Lee JY; Cho JH
    J Chem Phys; 2008 Nov; 129(19):194110. PubMed ID: 19026048
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy.
    Qin XR; Swartzentruber BS; Lagally MG
    Phys Rev Lett; 2000 Oct; 85(17):3660-3. PubMed ID: 11030975
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scanning tunneling microscopy study.
    Zhachuk R; Teys S; Coutinho J
    J Chem Phys; 2013 Jun; 138(22):224702. PubMed ID: 23781810
    [TBL] [Abstract][Full Text] [Related]  

  • 6. The mechanism of the initial step of germanosilicate formation in solution: a first-principles molecular dynamics study.
    Trinh TT; Rozanska X; Delbecq F; Tuel A; Sautet P
    Phys Chem Chem Phys; 2016 Jun; 18(21):14419-25. PubMed ID: 27172391
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Changing the diffusion mechanism of Ge-Si dimers on Si(001) using an electric field.
    Sanders LM; Stumpf R; Mattsson TR; Swartzentruber BS
    Phys Rev Lett; 2003 Nov; 91(20):206104. PubMed ID: 14683380
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Two-atom structures of Ge on Si(100): dimers versus adatom pairs.
    da Silva AJ; Dalpian GM; Janotti A; Fazzio A
    Phys Rev Lett; 2001 Jul; 87(3):036104. PubMed ID: 11461575
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Origin of the stability of Ge(105) on si: a new structure model and surface strain relaxation.
    Fujikawa Y; Akiyama K; Nagao T; Sakurai T; Lagally MG; Hashimoto T; Morikawa Y; Terakura K
    Phys Rev Lett; 2002 Apr; 88(17):176101. PubMed ID: 12005768
    [TBL] [Abstract][Full Text] [Related]  

  • 10. An atomic seesaw switch formed by tilted asymmetric Sn-Ge dimers on a Ge (001) surface.
    Tomatsu K; Nakatsuji K; Iimori T; Takagi Y; Kusuhara H; Ishii A; Komori F
    Science; 2007 Mar; 315(5819):1696-8. PubMed ID: 17379803
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Origin of Symmetric Dimer Images of Si(001) Observed by Low-Temperature Scanning Tunneling Microscopy.
    Ren XY; Kim HJ; Niu CY; Jia Y; Cho JH
    Sci Rep; 2016 Jun; 6():27868. PubMed ID: 27292000
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Two-dimensional carbon incorporation into Si(001): C amount and structure of Si(001)-c(4 x 4).
    Kim H; Kim W; Lee G; Koo JY
    Phys Rev Lett; 2005 Feb; 94(7):076102. PubMed ID: 15783829
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Different adsorption structures of pyridine on Si(001) and Ge(001) surfaces.
    Kim HJ; Cho JH
    J Chem Phys; 2004 May; 120(17):8222-5. PubMed ID: 15267742
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Atomic structure of the Ag/Ge(111)-(sq.rt.(3) x sq.rt.(3)) surface: From scanning tunneling microscopy observation to theoretical study.
    Chou LW; Wu HC; Lee YR; Jiang JC; Su C; Lin JC
    J Chem Phys; 2009 Dec; 131(22):224705. PubMed ID: 20001074
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Morphological and compositional evolution of the ge/si(001) surface during exposure to a si flux.
    Rastelli A; von Känel H; Albini G; Raiteri P; Migas DB; Miglio L
    Phys Rev Lett; 2003 May; 90(21):216104. PubMed ID: 12786568
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface.
    Paul N; Filimonov S; Cherepanov V; Cakmak M; Voigtländer B
    Phys Rev Lett; 2007 Apr; 98(16):166104. PubMed ID: 17501435
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Atomic nanowires on the Pt/Ge(001) surface: buried Pt-Ge versus top Pt-Pt chains.
    Stekolnikov AA; Bechstedt F; Wisniewski M; Schäfer J; Claessen R
    Phys Rev Lett; 2008 May; 100(19):196101. PubMed ID: 18518463
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Formation of highly ordered organic monolayers by dative bonding: pyridine on ge(100).
    Cho YE; Maeng JY; Kim S; Hong S
    J Am Chem Soc; 2003 Jun; 125(25):7514-5. PubMed ID: 12812481
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.
    Gangopadhyay S; Yoshimura M; Ueda K
    Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Surface segregation of Ge at SiGe(001) by concerted exchange pathways.
    Bogusławski P; Bernholc J
    Phys Rev Lett; 2002 Apr; 88(16):166101. PubMed ID: 11955240
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 16.