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7. Analysis of the effects of applying external fields and device dimensions alterations on GaAs/AlGaAs multiple quantum well slow light devices based on excitonic population oscillation. Kohandani R; Zandi A; Kaatuzian H Appl Opt; 2014 Feb; 53(6):1228-36. PubMed ID: 24663324 [TBL] [Abstract][Full Text] [Related]
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11. Measurements of the electric field of zero-point optical phonons in GaAs quantum wells support the Urbach rule for zero-temperature lifetime broadening. Bhattacharya R; Mondal R; Khatua P; Rudra A; Kapon E; Malzer S; Döhler G; Pal B; Bansal B Phys Rev Lett; 2015 Jan; 114(4):047402. PubMed ID: 25679907 [TBL] [Abstract][Full Text] [Related]
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20. Raman study of interface phonons in GaAs/AlAs quantum wells: Resonance with the e2-h2 exciton. Fu LP; Schmiedel T; Petrou A; Dutta M; Newman PG; Stroscio MA Phys Rev B Condens Matter; 1992 Sep; 46(11):7196-7199. PubMed ID: 10002431 [No Abstract] [Full Text] [Related] [Next] [New Search]