These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
88 related articles for article (PubMed ID: 11766985)
21. Analysis of grain boundary dislocations by large angle convergent beam electron diffraction. Morniroli JP; Cherns D Ultramicroscopy; 1996 Jan; 62(1-2):53-63. PubMed ID: 22666917 [TBL] [Abstract][Full Text] [Related]
22. GaAs Clusters in the Quantum Size Regime: Growth on High Surface Area Silica by Molecular Beam Epitaxy. Sandroff CJ; Harbison JP; Ramesh R; Andrejco MJ; Hegde MS; Chang CC; Vogel EM; Hwang DM Science; 1989 Jul; 245(4916):391-3. PubMed ID: 17744146 [TBL] [Abstract][Full Text] [Related]
23. Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure. Mazur YI; Dorogan VG; Schmidbauer M; Tarasov GG; Johnson SR; Lu X; Yu SQ; Wang ZhM; Tiedje T; Salamo GJ Nanotechnology; 2011 Sep; 22(37):375703. PubMed ID: 21852736 [TBL] [Abstract][Full Text] [Related]
24. Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES. Bouravleuv AD; Lev LL; Piamonteze C; Wang X; Schmitt T; Khrebtov AI; Samsonenko YB; Kanski J; Cirlin GE; Strocov VN Nanotechnology; 2016 Oct; 27(42):425706. PubMed ID: 27631689 [TBL] [Abstract][Full Text] [Related]
25. Digital electron diffraction--seeing the whole picture. Beanland R; Thomas PJ; Woodward DI; Thomas PA; Roemer RA Acta Crystallogr A; 2013 Jul; 69(Pt 4):427-34. PubMed ID: 23778099 [TBL] [Abstract][Full Text] [Related]
26. Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001). Ashraf T; Gusenbauer C; Stangl J; Hesser G; Wegscheider M; Koch R J Phys Condens Matter; 2011 Feb; 23(4):042001. PubMed ID: 21406874 [TBL] [Abstract][Full Text] [Related]
27. Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction. Kret S; Dłużewski P; Szczepańska A; Zak M; Czernecki R; Kryśko M; Leszczyński M; Maciejewski G Nanotechnology; 2007 Nov; 18(46):465707. PubMed ID: 21730494 [TBL] [Abstract][Full Text] [Related]
28. LACDIF, a new electron diffraction technique obtained with the LACBED configuration and a C(s) corrector: comparison with electron precession. Morniroli JP; Houdellier F; Roucau C; Puiggalí J; Gestí S; Redjaïmia A Ultramicroscopy; 2008 Jan; 108(2):100-15. PubMed ID: 17517476 [TBL] [Abstract][Full Text] [Related]
29. Multilayer GaAs-Al(0.3)Ga(0.7)As dielectric quarter wave stacks grown by molecular beam epitaxy. van der Ziel JP; Ilegems M Appl Opt; 1975 Nov; 14(11):2627-30. PubMed ID: 20155076 [TBL] [Abstract][Full Text] [Related]
30. Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-x Bi x /GaAs quantum wells. Luna E; Wu M; Hanke M; Puustinen J; Guina M; Trampert A Nanotechnology; 2016 Aug; 27(32):325603. PubMed ID: 27364086 [TBL] [Abstract][Full Text] [Related]
31. Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE. Halder N; Suseendran J; Chakrabarti S; Herrera M; Bonds M; Browning ND J Nanosci Nanotechnol; 2010 Aug; 10(8):5202-6. PubMed ID: 21125871 [TBL] [Abstract][Full Text] [Related]
32. Influence of the Quantum Well Structure and Growth Temperature on a Five-Layer InGaMnAs Quantum Well with an InGaAs Buffer Layer. Yoon IT; Lee S; Roshchupkin DV; Panin GN J Nanosci Nanotechnol; 2018 Jun; 18(6):4355-4359. PubMed ID: 29442787 [TBL] [Abstract][Full Text] [Related]
33. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy. Tung KH; Huang J; Danner A J Nanosci Nanotechnol; 2016 Jun; 16(6):6465-9. PubMed ID: 27427737 [TBL] [Abstract][Full Text] [Related]
34. Effect of sample bending on diffracted intensities observed in CBED patterns of plan view strained samples. Houdellier F; Jacob D; Casanove MJ; Roucau C Ultramicroscopy; 2008 Mar; 108(4):295-301. PubMed ID: 17544215 [TBL] [Abstract][Full Text] [Related]
35. Nucleation sequence of InAs quantum dots on cross-hatch patterns. Kanjanachuchai S; Limwongse T J Nanosci Nanotechnol; 2011 Dec; 11(12):10787-91. PubMed ID: 22408996 [TBL] [Abstract][Full Text] [Related]
36. New developments in the characterization of dislocation loops from LACBED patterns. Morniroli JP; Marceau RK; Ringer SP J Microsc; 2006 Sep; 223(Pt 3):246-8. PubMed ID: 17059541 [TBL] [Abstract][Full Text] [Related]
38. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy. Morales-Cortés H; Mejía-García C; Méndez-García VH; Vázquez-Cortés D; Rojas-Ramírez JS; Contreras-Guerrero R; Ramírez-López M; Martínez-Velis I; López-López M Nanotechnology; 2010 Apr; 21(13):134012. PubMed ID: 20208110 [TBL] [Abstract][Full Text] [Related]
39. Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces. Wu J; Wang ZM; Dorogan VG; Li S; Mazur YI; Salamo GJ Nanoscale; 2011 Apr; 3(4):1485-8. PubMed ID: 21384043 [TBL] [Abstract][Full Text] [Related]
40. Elastic scattering of partially coherent beams of fast electrons by a crystal with a defect. Borgardt NI Acta Crystallogr A; 1999 Mar; 55(Pt 2 Pt 2):289-304. PubMed ID: 10927260 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]