These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
249 related articles for article (PubMed ID: 12005768)
21. Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001). Montalenti F; Raiteri P; Migas DB; von Känel H; Rastelli A; Manzano C; Costantini G; Denker U; Schmidt OG; Kern K; Miglio L Phys Rev Lett; 2004 Nov; 93(21):216102. PubMed ID: 15601034 [TBL] [Abstract][Full Text] [Related]
22. Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001). Yakimov AI; Nikiforov AI; Dvurechenskii AV; Ulyanov VV; Volodin VA; Groetzschel R Nanotechnology; 2006 Sep; 17(18):4743-7. PubMed ID: 21727607 [TBL] [Abstract][Full Text] [Related]
23. In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy. Sanduijav B; Matei DG; Springholz G Nanoscale Res Lett; 2010 Oct; 5(12):1935-41. PubMed ID: 21170141 [TBL] [Abstract][Full Text] [Related]
24. Two-dimensional carbon incorporation into Si(001): C amount and structure of Si(001)-c(4 x 4). Kim H; Kim W; Lee G; Koo JY Phys Rev Lett; 2005 Feb; 94(7):076102. PubMed ID: 15783829 [TBL] [Abstract][Full Text] [Related]
25. STM images apparently corresponding to a stable structure: considerable fluctuation of a phase boundary of the Si(111)-(square root of (3) x square root of (3))-Ag surface. Nakamura Y; Kondo Y; Nakamura J; Watanabe S Phys Rev Lett; 2001 Oct; 87(15):156102. PubMed ID: 11580712 [TBL] [Abstract][Full Text] [Related]
26. Electrodeposition of Ge, Si and Si x Ge 1-x from an air- and water-stable ionic liquid. Al-Salman R; El Abedin SZ; Endres F Phys Chem Chem Phys; 2008 Aug; 10(31):4650-7. PubMed ID: 18665315 [TBL] [Abstract][Full Text] [Related]
27. Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires. Vincent L; Boukhicha R; Cherkashin N; Reboh S; Patriarche G; Renard C; Yam V; Fossard F; Bouchier D Nanotechnology; 2012 Oct; 23(39):395701. PubMed ID: 22962281 [TBL] [Abstract][Full Text] [Related]
28. The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars. Zaumseil P; Kozlowski G; Schubert MA; Yamamoto Y; Bauer J; Schülli TU; Tillack B; Schroeder T Nanotechnology; 2012 Sep; 23(35):355706. PubMed ID: 22894894 [TBL] [Abstract][Full Text] [Related]
29. Atomic structure and formation mechanism of identically sized Au clusters grown on Si(111)-(7×7) surface. Wu Y; Zhou Y; Zhou C; Zhan H; Kang J J Chem Phys; 2010 Sep; 133(12):124706. PubMed ID: 20886964 [TBL] [Abstract][Full Text] [Related]
30. Crystalline structures and misfit strain inside Er silicide nanocrystals self-assembled on Si(001) substrates. Ding T; Wu Y; Song J; Li J; Huang H; Zou J; Cai Q Nanotechnology; 2011 Jun; 22(24):245707. PubMed ID: 21543833 [TBL] [Abstract][Full Text] [Related]
31. Study of adsorption and decomposition of H2O on Ge(100). Jung SJ; Lee JY; Hong S; Kim S J Phys Chem B; 2005 Dec; 109(51):24445-9. PubMed ID: 16375446 [TBL] [Abstract][Full Text] [Related]
39. Formation of Co/Ge intermixing layers after Co deposition on Ge(111)2 × 1 surfaces. Muzychenko DA; Schouteden K; Panov VI; Van Haesendonck C Nanotechnology; 2012 Nov; 23(43):435605. PubMed ID: 23059653 [TBL] [Abstract][Full Text] [Related]
40. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition. Bollani M; Chrastina D; Fedorov A; Sordan R; Picco A; Bonera E Nanotechnology; 2010 Nov; 21(47):475302. PubMed ID: 21030775 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]