These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

96 related articles for article (PubMed ID: 12857149)

  • 1. Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO.
    Wang LG; Zunger A
    Phys Rev Lett; 2003 Jun; 90(25 Pt 1):256401. PubMed ID: 12857149
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Control of doping by impurity Cchemical potentials: predictions for p-type ZnO.
    Yan Y; Zhang SB; Pantelides ST
    Phys Rev Lett; 2001 Jun; 86(25):5723-6. PubMed ID: 11415342
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO.
    Fons P; Tampo H; Kolobov AV; Ohkubo M; Niki S; Tominaga J; Carboni R; Boscherini F; Friedrich S
    Phys Rev Lett; 2006 Feb; 96(4):045504. PubMed ID: 16486842
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Possible approach to overcome the doping asymmetry in wideband gap semiconductors.
    Yan Y; Li J; Wei SH; Al-Jassim MM
    Phys Rev Lett; 2007 Mar; 98(13):135506. PubMed ID: 17501215
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Property database for single-element doping in ZnO obtained by automated first-principles calculations.
    Yim K; Lee J; Lee D; Lee M; Cho E; Lee HS; Nahm HH; Han S
    Sci Rep; 2017 Jan; 7():40907. PubMed ID: 28112188
    [TBL] [Abstract][Full Text] [Related]  

  • 6. An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires.
    Wang F; Seo JH; Bayerl D; Shi J; Mi H; Ma Z; Zhao D; Shuai Y; Zhou W; Wang X
    Nanotechnology; 2011 Jun; 22(22):225602. PubMed ID: 21454935
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Strain-enhanced doping in semiconductors: effects of dopant size and charge state.
    Zhu J; Liu F; Stringfellow GB; Wei SH
    Phys Rev Lett; 2010 Nov; 105(19):195503. PubMed ID: 21231183
    [TBL] [Abstract][Full Text] [Related]  

  • 8. The synthesis and characterization of Ag-N dual-doped p-type ZnO: experiment and theory.
    Duan L; Wang P; Yu X; Han X; Chen Y; Zhao P; Li D; Yao R
    Phys Chem Chem Phys; 2014 Mar; 16(9):4092-7. PubMed ID: 24448605
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.
    Simon J; Protasenko V; Lian C; Xing H; Jena D
    Science; 2010 Jan; 327(5961):60-4. PubMed ID: 20044569
    [TBL] [Abstract][Full Text] [Related]  

  • 10. P-type nitrogen-doped ZnO nanostructures with controlled shape and doping level by facile microwave synthesis.
    Herring NP; Panchakarla LS; El-Shall MS
    Langmuir; 2014 Mar; 30(8):2230-40. PubMed ID: 24555702
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Defects in compound semiconductors caused by molecular nitrogen.
    Nickel NH; Gluba MA
    Phys Rev Lett; 2009 Oct; 103(14):145501. PubMed ID: 19905579
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Origins of hole doping and relevant optoelectronic properties of wide gap p-type semiconductor, LaCuOSe.
    Hiramatsu H; Kamiya T; Tohei T; Ikenaga E; Mizoguchi T; Ikuhara Y; Kobayashi K; Hosono H
    J Am Chem Soc; 2010 Oct; 132(42):15060-7. PubMed ID: 20925406
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Theoretical investigation of the effects of doping on the electronic structure and thermoelectric properties of ZnO nanowires.
    Wang C; Wang Y; Zhang G; Peng C; Yang G
    Phys Chem Chem Phys; 2014 Feb; 16(8):3771-6. PubMed ID: 24430004
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Ultrashort and metastable doping of the ZnO surface by photoexcited defects.
    Gierster L; Vempati S; Stähler J
    Faraday Discuss; 2022 Sep; 237(0):58-79. PubMed ID: 35705141
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Compensation mechanism in N-doped ZnO nanowires.
    Gao J; Zhang X; Sun Y; Zhao Q; Yu D
    Nanotechnology; 2010 Jun; 21(24):245703. PubMed ID: 20484783
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effect of nitrogen and intrinsic defect complexes on conversion efficiency of ZnO for hydrogen generation from water.
    Lu YH; Russo SP; Feng YP
    Phys Chem Chem Phys; 2011 Sep; 13(35):15973-6. PubMed ID: 21811735
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Controlled nanoscale doping of semiconductors via molecular monolayers.
    Ho JC; Yerushalmi R; Jacobson ZA; Fan Z; Alley RL; Javey A
    Nat Mater; 2008 Jan; 7(1):62-7. PubMed ID: 17994026
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Use of a 1H-benzoimidazole derivative as an n-type dopant and to enable air-stable solution-processed n-channel organic thin-film transistors.
    Wei P; Oh JH; Dong G; Bao Z
    J Am Chem Soc; 2010 Jul; 132(26):8852-3. PubMed ID: 20552967
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Strong valence-band offset bowing of ZnO1-xSx enhances p-type nitrogen doping of ZnO-like alloys.
    Persson C; Platzer-Björkman C; Malmström J; Törndahl T; Edoff M
    Phys Rev Lett; 2006 Oct; 97(14):146403. PubMed ID: 17155274
    [TBL] [Abstract][Full Text] [Related]  

  • 20. ZnO gap engineering by doping with III-V compounds.
    Andriotis AN; Menon M
    J Phys Condens Matter; 2016 Jan; 28(3):035803. PubMed ID: 26733358
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.