610 related articles for article (PubMed ID: 15120133)
1. Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer.
Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC
Micron; 2004; 35(6):475-80. PubMed ID: 15120133
[TBL] [Abstract][Full Text] [Related]
2. Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies.
Liliental-Weber Z; Zakharov DN; Yu KM; Ager JW; Walukiewicz W; Haller EE; Lu H; Schaff WJ
J Electron Microsc (Tokyo); 2005 Jun; 54(3):243-50. PubMed ID: 16123056
[TBL] [Abstract][Full Text] [Related]
3. Microstructural and compositional analysis of strontium-doped lead zirconate titanate thin films on gold-coated silicon substrates.
Sriram S; Bhaskaran M; Mitchell DR; Short KT; Holland AS; Mitchell A
Microsc Microanal; 2009 Feb; 15(1):30-5. PubMed ID: 19144255
[TBL] [Abstract][Full Text] [Related]
4. Study of the integrated growth of dielectric films on GaN semiconductor substrates.
Li Y; Zhu J; Luo W
IEEE Trans Ultrason Ferroelectr Freq Control; 2010 Oct; 57(10):2192-7. PubMed ID: 20889404
[TBL] [Abstract][Full Text] [Related]
5. Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor-deposition-grown graphene films.
Thiele S; Reina A; Healey P; Kedzierski J; Wyatt P; Hsu PL; Keast C; Schaefer J; Kong J
Nanotechnology; 2010 Jan; 21(1):015601. PubMed ID: 19946163
[TBL] [Abstract][Full Text] [Related]
6. Synthesis of nano-dimensional ZnO and Ga doped ZnO thin films by vapor phase transport and study as transparent conducting oxide.
Ghosh S; Saurav M; Pandey B; Srivastava P
J Nanosci Nanotechnol; 2008 May; 8(5):2655-8. PubMed ID: 18572702
[TBL] [Abstract][Full Text] [Related]
7. Epitaxial growth of pentacene films on Cu110.
Söhnchen S; Lukas S; Witte G
J Chem Phys; 2004 Jul; 121(1):525-34. PubMed ID: 15260574
[TBL] [Abstract][Full Text] [Related]
8. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy.
Tanaka S; Aoyama K; Ichihashi M; Arai S; Honda Y; Sawaki N
J Electron Microsc (Tokyo); 2007 Aug; 56(4):141-4. PubMed ID: 17962377
[TBL] [Abstract][Full Text] [Related]
9. Microstructural investigation of nickel silicide thin films and the silicide-silicon interface using transmission electron microscopy.
Bhaskaran M; Sriram S; Mitchell DR; Short KT; Holland AS; Mitchell A
Micron; 2009 Jan; 40(1):11-4. PubMed ID: 18337112
[TBL] [Abstract][Full Text] [Related]
10. TEM investigations on ZnO nanobelts synthesized via a vapor phase growth.
Chen YF; Wang RM; Zhang HZ; Sun XC; Zhang ZS; Xing YJ; Yu DP
Micron; 2004; 35(6):481-7. PubMed ID: 15120134
[TBL] [Abstract][Full Text] [Related]
11. [Structural and optical characterization of ZnO thin films grown by plasma-assisted molecular beam epitaxy].
Lan ZL; Zhang XQ; Yang GW; Sun J; Liu FJ; Huang HQ; Zhang R; Yin PG; Guo L; Song YC
Guang Pu Xue Yu Guang Pu Fen Xi; 2008 Feb; 28(2):253-5. PubMed ID: 18478997
[TBL] [Abstract][Full Text] [Related]
12. Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.
Wei X; Zhao R; Shao M; Xu X; Huang J
Nanoscale Res Lett; 2013 Feb; 8(1):112. PubMed ID: 23448090
[TBL] [Abstract][Full Text] [Related]
13. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.
Wang W; Wang H; Yang W; Zhu Y; Li G
Sci Rep; 2016 Apr; 6():24448. PubMed ID: 27101930
[TBL] [Abstract][Full Text] [Related]
14. Epitaxial Fe3Si films on GaAs(100) substrates by means of electron beam evaporation.
Thomas J; Schumann J; Vinzelberg H; Arushanov E; Engelhard R; Schmidt OG; Gemming T
Nanotechnology; 2009 Jun; 20(23):235604. PubMed ID: 19451681
[TBL] [Abstract][Full Text] [Related]
15. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition.
Shih HY; Lin MC; Chen LY; Chen MJ
Nanotechnology; 2015 Jan; 26(1):014002. PubMed ID: 25494474
[TBL] [Abstract][Full Text] [Related]
16. Atomic layer deposition of quantum-confined ZnO nanostructures.
King DM; Johnson SI; Li J; Du X; Liang X; Weimer AW
Nanotechnology; 2009 May; 20(19):195401. PubMed ID: 19420639
[TBL] [Abstract][Full Text] [Related]
17. Back-etch method for plan view transmission electron microscopy sample preparation of optically opaque films.
Yao B; Coffey KR
J Electron Microsc (Tokyo); 2008 Apr; 57(2):47-52. PubMed ID: 18227137
[TBL] [Abstract][Full Text] [Related]
18. Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy.
Wang XF; Li Q; Lee PF; Dai JY; Gong XG
Micron; 2010 Jan; 41(1):15-9. PubMed ID: 19720540
[TBL] [Abstract][Full Text] [Related]
19. Epitaxial growth of ZnO layers using nanorods with high crystalline quality.
Park DJ; Kim DC; Lee JY; Cho HK
Nanotechnology; 2007 Oct; 18(39):395605. PubMed ID: 21730425
[TBL] [Abstract][Full Text] [Related]
20. Photoinduced hydrophilicity of heteroepitaxially grown ZnO thin films.
Miyauchi M; Shimai A; Tsuru Y
J Phys Chem B; 2005 Jul; 109(27):13307-11. PubMed ID: 16852660
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]