221 related articles for article (PubMed ID: 15582972)
1. Lattice parameter determination of a composition controlled Si1-x Gex layer on a Si (001) substrate using convergent-beam electron diffraction.
Akaogi T; Tsuda K; Terauchi M; Tanaka M
J Electron Microsc (Tokyo); 2004; 53(6):593-600. PubMed ID: 15582972
[TBL] [Abstract][Full Text] [Related]
2. Nonthermal plasma synthesized freestanding silicon-germanium alloy nanocrystals.
Pi XD; Kortshagen U
Nanotechnology; 2009 Jul; 20(29):295602. PubMed ID: 19567968
[TBL] [Abstract][Full Text] [Related]
3. Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction.
Akaogi T; Tsuda K; Terauchi M; Tanaka M
J Electron Microsc (Tokyo); 2006 Jun; 55(3):129-35. PubMed ID: 16825201
[TBL] [Abstract][Full Text] [Related]
4. Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED.
Akaogi T; Tsuda K; Terauchi M; Tanaka M
J Electron Microsc (Tokyo); 2004; 53(1):11-9. PubMed ID: 15077894
[TBL] [Abstract][Full Text] [Related]
5. Stranski-Krastanow growth of germanium on silicon nanowires.
Pan L; Lew KK; Redwing JM; Dickey EC
Nano Lett; 2005 Jun; 5(6):1081-5. PubMed ID: 15943447
[TBL] [Abstract][Full Text] [Related]
6. Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures.
Zhang X; Kulik J; Dickey EC
J Nanosci Nanotechnol; 2007 Feb; 7(2):717-20. PubMed ID: 17450821
[TBL] [Abstract][Full Text] [Related]
7. On the formation and photoluminescence of Si(1-x)Ge(x) nanoparticles.
Chen PJ; Tsai MY; Chi CC; Perng TP
J Nanosci Nanotechnol; 2007 Sep; 7(9):3340-3. PubMed ID: 18019172
[TBL] [Abstract][Full Text] [Related]
8. Ge quantum dots structural peculiarities depending on the preparation conditions.
Erenburg S; Bausk N; Mazalov L; Nikiforov A; Yakimov A
J Synchrotron Radiat; 2003 Sep; 10(Pt 5):380-3. PubMed ID: 12944626
[TBL] [Abstract][Full Text] [Related]
9. Ferromagnetic Mn-doped Si0.3Ge0.7 nanodots self-assembled on Si(100).
De Padova P; Olivieri B; Mariot JM; Favre L; Berbezier I; Quaresima C; Paci B; Generosi A; Rossi Albertini V; Cricenti A; Ottaviani C; Luce M; Testa AM; Peddis D; Fiorani D; Scarselli M; De Crescenzi M; Heckmann O; Richter MC; Hricovini K; d'Acapito F
J Phys Condens Matter; 2012 Apr; 24(14):142203. PubMed ID: 22410688
[TBL] [Abstract][Full Text] [Related]
10. Convergent beam electron diffraction extinction distance measurements for quantitative analysis of si(1-x),Ge(x).
Delille D; Pantel R; Vincent G; Van Cappellen E
Ultramicroscopy; 2002 Oct; 93(1):1-9. PubMed ID: 12380646
[TBL] [Abstract][Full Text] [Related]
11. DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces.
Dash JK; Rath A; Juluri RR; Raman PS; Müller K; Rosenauer A; Satyam PV
J Phys Condens Matter; 2011 Apr; 23(13):135002. PubMed ID: 21403241
[TBL] [Abstract][Full Text] [Related]
12. Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.
Nassiopoulou AG; Olzierski A; Tsoi E; Berbezier I; Karmous A
J Nanosci Nanotechnol; 2007 Jan; 7(1):316-21. PubMed ID: 17455497
[TBL] [Abstract][Full Text] [Related]
13. Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes.
Hu J; Jiang Y; Meng X; Lee CS; Lee ST
Small; 2005 Apr; 1(4):429-38. PubMed ID: 17193468
[TBL] [Abstract][Full Text] [Related]
14. Practical considerations on the determination of the accuracy of the lattice parameters measurements from digital recorded diffractograms.
Biskupek J; Kaiser U
J Electron Microsc (Tokyo); 2004; 53(6):601-10. PubMed ID: 15582973
[TBL] [Abstract][Full Text] [Related]
15. Strain field mapping of dislocations in a Ge/Si heterostructure.
Liu Q; Zhao C; Su S; Li J; Xing Y; Cheng B
PLoS One; 2013; 8(4):e62672. PubMed ID: 23626845
[TBL] [Abstract][Full Text] [Related]
16. The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.
Wu J; Wieligor M; Zerda TW; Coffer JL
Nanoscale; 2010 Dec; 2(12):2657-67. PubMed ID: 20931125
[TBL] [Abstract][Full Text] [Related]
17. Imaging of three-dimensional (Si,Ge) nanostructures by off-axis electron holography.
Zheng CL; Scheerschmidt K; Kirmse H; Häusler I; Neumann W
Ultramicroscopy; 2013 Jan; 124():108-16. PubMed ID: 23142752
[TBL] [Abstract][Full Text] [Related]
18. Atomically abrupt silicon-germanium axial heterostructure nanowires synthesized in a solvent vapor growth system.
Geaney H; Mullane E; Ramasse QM; Ryan KM
Nano Lett; 2013 Apr; 13(4):1675-80. PubMed ID: 23517564
[TBL] [Abstract][Full Text] [Related]
19. 1300 nm wavelength InAs quantum dot photodetector grown on silicon.
Sandall I; Ng JS; David JP; Tan CH; Wang T; Liu H
Opt Express; 2012 May; 20(10):10446-52. PubMed ID: 22565669
[TBL] [Abstract][Full Text] [Related]
20. X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates.
Zaumseil P; Kozlowski G; Yamamoto Y; Schubert MA; Schroeder T
J Appl Crystallogr; 2013 Aug; 46(Pt 4):868-873. PubMed ID: 24046490
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]