181 related articles for article (PubMed ID: 15943439)
21. The controlled growth of GaN nanowires.
Hersee SD; Sun X; Wang X
Nano Lett; 2006 Aug; 6(8):1808-11. PubMed ID: 16895377
[TBL] [Abstract][Full Text] [Related]
22. Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.
Chen JT; Lai WC; Kao YJ; Yang YY; Sheu JK
Opt Express; 2012 Feb; 20(5):5689-95. PubMed ID: 22418376
[TBL] [Abstract][Full Text] [Related]
23. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
Seo YG; Baik KH; Song H; Son JS; Oh K; Hwang SM
Opt Express; 2011 Jul; 19(14):12919-24. PubMed ID: 21747444
[TBL] [Abstract][Full Text] [Related]
24. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
Kyaw Z; Zhang ZH; Liu W; Tan ST; Ju ZG; Zhang XL; Ji Y; Hasanov N; Zhu B; Lu S; Zhang Y; Sun XW; Demir HV
Opt Express; 2014 Jan; 22(1):809-16. PubMed ID: 24515040
[TBL] [Abstract][Full Text] [Related]
25. Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.
Oh S; Shin KS; Kim SW; Lee S; Yu H; Cho S; Kim KK
J Nanosci Nanotechnol; 2013 May; 13(5):3696-9. PubMed ID: 23858930
[TBL] [Abstract][Full Text] [Related]
26. Integration by self-aligned writing of nanocrystal/epoxy composites on InGaN micro-pixelated light-emitting diodes.
Guilhabert B; Elfström D; Kuehne AJ; Massoubre D; Zhang HX; Jin SR; Mackintosh AR; Gu E; Pethrick RA; Dawson MD
Opt Express; 2008 Nov; 16(23):18933-41. PubMed ID: 19581984
[TBL] [Abstract][Full Text] [Related]
27. Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.
Konkar A; Lu S; Madhukar A; Hughes SM; Alivisatos AP
Nano Lett; 2005 May; 5(5):969-73. PubMed ID: 15884904
[TBL] [Abstract][Full Text] [Related]
28. Chemical and thermodynamic control of the surface of semiconductor nanocrystals for designer white light emitters.
Krause MM; Mooney J; Kambhampati P
ACS Nano; 2013 Jul; 7(7):5922-9. PubMed ID: 23802709
[TBL] [Abstract][Full Text] [Related]
29. Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.
Park YJ; Kim HY; Ryu JH; Kim HK; Kang JH; Han N; Han M; Jeong H; Jeong MS; Hong CH
Opt Express; 2011 Jan; 19(3):2029-36. PubMed ID: 21369019
[TBL] [Abstract][Full Text] [Related]
30. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.
Chuang LC; Sedgwick FG; Chen R; Ko WS; Moewe M; Ng KW; Tran TT; Chang-Hasnain C
Nano Lett; 2011 Feb; 11(2):385-90. PubMed ID: 21174451
[TBL] [Abstract][Full Text] [Related]
31. Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.
Zhang L; Li Q; Shang L; Wang F; Qu C; Zhao F
Opt Express; 2013 Jul; 21(14):16578-83. PubMed ID: 23938509
[TBL] [Abstract][Full Text] [Related]
32. Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.
Jang LW; Ju JW; Jeon DW; Park JW; Polyakov AY; Lee SJ; Baek JH; Lee SM; Cho YH; Lee IH
Opt Express; 2012 Mar; 20(6):6036-41. PubMed ID: 22418481
[TBL] [Abstract][Full Text] [Related]
33. A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode.
Chen LC; Wang CK; Huang JB; Hong LS
Nanotechnology; 2009 Feb; 20(8):085303. PubMed ID: 19417447
[TBL] [Abstract][Full Text] [Related]
34. Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region.
Kim G; Kim JH; Park EH; Kang D; Park BG
Opt Express; 2014 Jan; 22(2):1235-42. PubMed ID: 24515129
[TBL] [Abstract][Full Text] [Related]
35. Size-dependent photoconductivity in MBE-grown GaN-nanowires.
Calarco R; Marso M; Richter T; Aykanat AI; Meijers R; V D Hart A; Stoica T; Lüth H
Nano Lett; 2005 May; 5(5):981-4. PubMed ID: 15884906
[TBL] [Abstract][Full Text] [Related]
36. Layer-by-layer growth of CdSe-based nanocrystal light-emitting diodes.
Lee J; Mathai M; Jain F; Papadimitrakopoulos F
J Nanosci Nanotechnol; 2001 Mar; 1(1):59-64. PubMed ID: 12914033
[TBL] [Abstract][Full Text] [Related]
37. Room temperature current injection polariton light emitting diode with a hybrid microcavity.
Lu TC; Chen JR; Lin SC; Huang SW; Wang SC; Yamamoto Y
Nano Lett; 2011 Jul; 11(7):2791-5. PubMed ID: 21675759
[TBL] [Abstract][Full Text] [Related]
38. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
Zhang ZH; Tan ST; Liu W; Ju Z; Zheng K; Kyaw Z; Ji Y; Hasanov N; Sun XW; Demir HV
Opt Express; 2013 Feb; 21(4):4958-69. PubMed ID: 23482028
[TBL] [Abstract][Full Text] [Related]
39. High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).
Koester R; Sager D; Quitsch WA; Pfingsten O; Poloczek A; Blumenthal S; Keller G; Prost W; Bacher G; Tegude FJ
Nano Lett; 2015 Apr; 15(4):2318-23. PubMed ID: 25758029
[TBL] [Abstract][Full Text] [Related]
40. Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes.
Chiu CH; Yu P; Chang CH; Yang CS; Hsu MH; Kuo HC; Tsai MA
Opt Express; 2009 Nov; 17(23):21250-6. PubMed ID: 19997364
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
