These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

154 related articles for article (PubMed ID: 16042461)

  • 1. In situ quadrupole mass spectrometry study of atomic-layer deposition of ZrO2 using Cp2Zr(CH3)2 and water.
    Niinistö J; Rahtu A; Putkonen M; Ritala M; Leskelä M; Niinistö L
    Langmuir; 2005 Aug; 21(16):7321-5. PubMed ID: 16042461
    [TBL] [Abstract][Full Text] [Related]  

  • 2. In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water.
    Matero R; Rahtu A; Ritala M
    Langmuir; 2005 Apr; 21(8):3498-502. PubMed ID: 15807594
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Reaction mechanism studies on atomic layer deposition of Nb2O5 from Nb(OEt)5 and water.
    Knapas K; Rahtu A; Ritala M
    Langmuir; 2010 Jan; 26(2):848-53. PubMed ID: 19795848
    [TBL] [Abstract][Full Text] [Related]  

  • 4. In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).
    Rose M; Niinistö J; Endler I; Bartha JW; Kücher P; Ritala M
    ACS Appl Mater Interfaces; 2010 Feb; 2(2):347-50. PubMed ID: 20356179
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Atomic layer deposition and chemical vapor deposition precursor selection method application to strontium and barium precursors.
    Holme TP; Prinz FB
    J Phys Chem A; 2007 Aug; 111(33):8147-51. PubMed ID: 17655282
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Thermal stability of precursors for atomic layer deposition of TiO2, ZrO2, and HfO2: an ab initio study of alpha-hydrogen abstraction in bis-cyclopentadienyl dimethyl complexes.
    Zydor A; Elliott SD
    J Phys Chem A; 2010 Feb; 114(4):1879-86. PubMed ID: 20055493
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Heavy water reactions with atomic transition-metal and main-group cations: gas phase room-temperature kinetics and periodicities in reactivity.
    Cheng P; Koyanagi GK; Bohme DK
    J Phys Chem A; 2007 Sep; 111(35):8561-73. PubMed ID: 17696503
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1.
    Fenno RD; Halls MD; Raghavachari K
    J Phys Chem B; 2005 Mar; 109(11):4969-76. PubMed ID: 16863156
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Atomic layer deposition of tungsten(III) oxide thin films from W2(NMe2)6 and water: precursor-based control of oxidation state in the thin film material.
    Dezelah CL; El-Kadri OM; Szilágyi IM; Campbell JM; Arstila K; Niinistö L; Winter CH
    J Am Chem Soc; 2006 Aug; 128(30):9638-9. PubMed ID: 16866511
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Synthesis and characterisation of zirconium-amido guanidinato complex: a potential precursor for ZrO2 thin films.
    Devi A; Bhakta R; Milanov A; Hellwig M; Barreca D; Tondello E; Thomas R; Ehrhart P; Winter M; Fischer R
    Dalton Trans; 2007 May; (17):1671-6. PubMed ID: 17443259
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Atomic layer deposition of hafnium oxide from hafnium chloride and water.
    Mukhopadhyay AB; Musgrave CB; Fdez Sanz J
    J Am Chem Soc; 2008 Sep; 130(36):11996-2006. PubMed ID: 18698777
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effect of Growth Temperature on the Structural and Electrical Properties of ZrO₂ Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH₃)₂]₃/C₇H₈ Cocktail Precursor.
    An JK; Chung NK; Kim JT; Hahm SH; Lee G; Lee SB; Lee T; Park IS; Yun JY
    Materials (Basel); 2018 Mar; 11(3):. PubMed ID: 29510594
    [TBL] [Abstract][Full Text] [Related]  

  • 13. First principles simulation of reaction steps in the atomic layer deposition of titania: dependence of growth on Lewis acidity of titanocene precursor.
    Zydor A; Kessler VG; Elliott SD
    Phys Chem Chem Phys; 2012 Jun; 14(22):7954-64. PubMed ID: 22549386
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The role of acidic sites and the catalytic reaction pathways on the Rh/ZrO2 catalysts for ethanol steam reforming.
    Zhong Z; Ang H; Choong C; Chen L; Huang L; Lin J
    Phys Chem Chem Phys; 2009 Feb; 11(5):872-80. PubMed ID: 19290335
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Quartz crystal microbalance studies of Al2O3 atomic layer deposition using trimethylaluminum and water at 125 degrees C.
    Wind RA; George SM
    J Phys Chem A; 2010 Jan; 114(3):1281-9. PubMed ID: 19757806
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Atomic layer deposition of TiO2 from TiI4 and H2O onto SiO2 surfaces: ab initio calculations of the initial reaction mechanisms.
    Hu Z; Turner CH
    J Am Chem Soc; 2007 Apr; 129(13):3863-78. PubMed ID: 17346043
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Ab initio calculations of the reaction mechanisms for metal-nitride deposition from organo-metallic precursors onto functionalized self-assembled monolayers.
    Haran M; Engstrom JR; Clancy P
    J Am Chem Soc; 2006 Jan; 128(3):836-47. PubMed ID: 16417373
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications.
    Riha SC; Koegel AA; Meng X; Kim IS; Cao Y; Pellin MJ; Elam JW; Martinson AB
    ACS Appl Mater Interfaces; 2016 Feb; 8(4):2774-80. PubMed ID: 26784956
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Molecular layer deposition of poly(p-phenylene terephthalamide) films using terephthaloyl chloride and p-phenylenediamine.
    Adamczyk NM; Dameron AA; George SM
    Langmuir; 2008 Mar; 24(5):2081-9. PubMed ID: 18215079
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Reaction Mechanisms during Atomic Layer Deposition of AlF
    Vos MFJ; Knoops HCM; Kessels WMM; Mackus AJM
    J Phys Chem C Nanomater Interfaces; 2021 Feb; 125(7):3913-3923. PubMed ID: 33815650
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.