These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

234 related articles for article (PubMed ID: 16605346)

  • 1. Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.
    Dubrovskii VG; Sibirev NV; Cirlin GE; Harmand JC; Ustinov VM
    Phys Rev E Stat Nonlin Soft Matter Phys; 2006 Feb; 73(2 Pt 1):021603. PubMed ID: 16605346
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Detailed modeling of the epitaxial growth of GaAs nanowires.
    De Jong E; LaPierre RR; Wen JZ
    Nanotechnology; 2010 Jan; 21(4):045602. PubMed ID: 20009168
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Catalyst-free growth of InAs nanowires on Si (111) by CBE.
    Gomes UP; Ercolani D; Sibirev NV; Gemmi M; Dubrovskii VG; Beltram F; Sorba L
    Nanotechnology; 2015 Oct; 26(41):415604. PubMed ID: 26404459
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
    André Y; Lekhal K; Hoggan P; Avit G; Cadiz F; Rowe A; Paget D; Petit E; Leroux C; Trassoudaine A; Ramdani MR; Monier G; Colas D; Ajib R; Castelluci D; Gil E
    J Chem Phys; 2014 May; 140(19):194706. PubMed ID: 24852556
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Shape modification of III-V nanowires: the role of nucleation on sidewalls.
    Dubrovskii VG; Sibirev NV; Cirlin GE; Tchernycheva M; Harmand JC; Ustinov VM
    Phys Rev E Stat Nonlin Soft Matter Phys; 2008 Mar; 77(3 Pt 1):031606. PubMed ID: 18517394
    [TBL] [Abstract][Full Text] [Related]  

  • 6. New mode of vapor-liquid-solid nanowire growth.
    Dubrovskii VG; Cirlin GE; Sibirev NV; Jabeen F; Harmand JC; Werner P
    Nano Lett; 2011 Mar; 11(3):1247-53. PubMed ID: 21344916
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy.
    Kelrich A; Calahorra Y; Greenberg Y; Gavrilov A; Cohen S; Ritter D
    Nanotechnology; 2013 Nov; 24(47):475302. PubMed ID: 24177750
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Carrier gas effects on aluminum-catalyzed nanowire growth.
    Ke Y; Hainey M; Won D; Weng X; Eichfeld SM; Redwing JM
    Nanotechnology; 2016 Apr; 27(13):135605. PubMed ID: 26900836
    [TBL] [Abstract][Full Text] [Related]  

  • 9. The influence of the surface migration of gold on the growth of silicon nanowires.
    Hannon JB; Kodambaka S; Ross FM; Tromp RM
    Nature; 2006 Mar; 440(7080):69-71. PubMed ID: 16452928
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Diameter-dependent or independent: toward a mechanistic understanding of the vapor-liquid-solid Si nanowire growth rate.
    Lü YY; Cui H; Yang GW; Wang CX
    Nano Lett; 2012 Aug; 12(8):4032-6. PubMed ID: 22823587
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Surface diffusion and substrate-nanowire adatom exchange in InAs nanowire growth.
    Dayeh SA; Yu ET; Wang D
    Nano Lett; 2009 May; 9(5):1967-72. PubMed ID: 19397297
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Model of patterned self-assisted nanowire growth.
    Gibson SJ; LaPierre RR
    Nanotechnology; 2014 Oct; 25(41):415304. PubMed ID: 25258192
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Selective-area vapour-liquid-solid growth of InP nanowires.
    Dalacu D; Kam A; Guy Austing D; Wu X; Lapointe J; Aers GC; Poole PJ
    Nanotechnology; 2009 Sep; 20(39):395602. PubMed ID: 19724116
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The Mechanism of Ni-Assisted GaN Nanowire Growth.
    Maliakkal CB; Hatui N; Bapat RD; Chalke BA; Rahman AA; Bhattacharya A
    Nano Lett; 2016 Dec; 16(12):7632-7638. PubMed ID: 27960500
    [TBL] [Abstract][Full Text] [Related]  

  • 15. CdTe Nanowires by Au-Catalyzed Metalorganic Vapor Phase Epitaxy.
    Di Carlo V; Prete P; Dubrovskii VG; Berdnikov Y; Lovergine N
    Nano Lett; 2017 Jul; 17(7):4075-4082. PubMed ID: 28613888
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy.
    Bastiman F; Küpers H; Somaschini C; Geelhaar L
    Nanotechnology; 2016 Mar; 27(9):095601. PubMed ID: 26822408
    [TBL] [Abstract][Full Text] [Related]  

  • 17. The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism.
    Gao H; Lysevych M; Tan HH; Jagadish C; Zou J
    Nanotechnology; 2018 Nov; 29(46):465601. PubMed ID: 30179858
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport.
    Dubrovskii VG
    Nanomaterials (Basel); 2022 Mar; 12(7):. PubMed ID: 35407180
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy.
    Lancaster S; Groiss H; Zederbauer T; Andrews AM; MacFarland D; Schrenk W; Strasser G; Detz H
    Nanotechnology; 2019 Feb; 30(6):065602. PubMed ID: 30523852
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires.
    Dubrovskii VG; Hijazi H
    Nanomaterials (Basel); 2020 Apr; 10(5):. PubMed ID: 32349326
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 12.