These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
22. Strain analysis of misfit dislocations in α-Fe₂O ₃/α-Al₂O ₃ heterostructure interface by geometric phase analysis. Wang Y; Liu XP; Qin GW Micron; 2015 Feb; 69():21-4. PubMed ID: 25437852 [TBL] [Abstract][Full Text] [Related]
23. Encapsulated oxide nanoparticles: the influence of the microstructure on associated impurities within a material. Sayle DC; Parker SC J Am Chem Soc; 2003 Jul; 125(28):8581-8. PubMed ID: 12848566 [TBL] [Abstract][Full Text] [Related]
24. Total reflection X-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure. McNally PJ; Dilliway G; Bonar JM; Willoughby A; Tuomi T; Rantamäki R; Danilewsky AN; Lowney D J Xray Sci Technol; 2001 Jan; 9(3):121-30. PubMed ID: 22388563 [TBL] [Abstract][Full Text] [Related]
25. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy. Yue R; Barton AT; Zhu H; Azcatl A; Pena LF; Wang J; Peng X; Lu N; Cheng L; Addou R; McDonnell S; Colombo L; Hsu JW; Kim J; Kim MJ; Wallace RM; Hinkle CL ACS Nano; 2015 Jan; 9(1):474-80. PubMed ID: 25496648 [TBL] [Abstract][Full Text] [Related]
26. Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films. Katiyar AK; Grimm A; Bar R; Schmidt J; Wietler T; Osten HJ; Ray SK Nanotechnology; 2016 Oct; 27(43):435204. PubMed ID: 27659285 [TBL] [Abstract][Full Text] [Related]
28. Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111). Zhang KH; Lazarov VK; Veal TD; Oropeza FE; McConville CF; Egdell RG; Walsh A J Phys Condens Matter; 2011 Aug; 23(33):334211. PubMed ID: 21813945 [TBL] [Abstract][Full Text] [Related]
30. The influences of surface effect and elastic strain energy on structure and mechanical properties of dislocations in several diamond- and sphalerite-structured materials. Zhang H PLoS One; 2023; 18(7):e0288331. PubMed ID: 37418485 [TBL] [Abstract][Full Text] [Related]
32. Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates. Nakamura Y; Murayama A; Watanabe R; Iyoda T; Ichikawa M Nanotechnology; 2010 Mar; 21(9):095305. PubMed ID: 20130347 [TBL] [Abstract][Full Text] [Related]
33. [Raman spectra studies of MBE-grown n-GaAs/SI-GaAs films]. Wang B; Xu XX; Qin Z; Song N; Zhang CZ Guang Pu Xue Yu Guang Pu Fen Xi; 2008 Sep; 28(9):2103-6. PubMed ID: 19093570 [TBL] [Abstract][Full Text] [Related]
34. Application of digital phase shifting moiré method in interface and dislocation location recognition and real strain characterization from HRTEM images. Zhu Y; Wen H; Zhang H; Liu Z Opt Express; 2019 Dec; 27(25):36990-37002. PubMed ID: 31873469 [TBL] [Abstract][Full Text] [Related]
35. X-ray diffraction from dislocation half-loops in epitaxial films. Kaganer VM J Appl Crystallogr; 2024 Apr; 57(Pt 2):276-283. PubMed ID: 38596741 [TBL] [Abstract][Full Text] [Related]
36. Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate patterning. Marzegalli A; Isa F; Groiss H; Müller E; Falub CV; Taboada AG; Niedermann P; Isella G; Schäffler F; Montalenti F; von Känel H; Miglio L Adv Mater; 2013 Aug; 25(32):4408-12. PubMed ID: 23788016 [TBL] [Abstract][Full Text] [Related]
37. Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSi overlayer on Si(001). Maras E; Pizzagalli L; Ala-Nissila T; Jónsson H Sci Rep; 2017 Sep; 7(1):11966. PubMed ID: 28931841 [TBL] [Abstract][Full Text] [Related]
38. Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations. Barbisan L; Marzegalli A; Montalenti F Sci Rep; 2022 Feb; 12(1):3235. PubMed ID: 35217682 [TBL] [Abstract][Full Text] [Related]
39. Ab initio study of misfit dislocations at the SiC/Si(001) interface. Cicero G; Pizzagalli L; Catellani A Phys Rev Lett; 2002 Oct; 89(15):156101. PubMed ID: 12366001 [TBL] [Abstract][Full Text] [Related]