These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

122 related articles for article (PubMed ID: 16712383)

  • 1. Decomposition of 1/f noise in Al(x)Ga(1-x)As/GaAs Hall devices.
    Müller J; von Molnár S; Ohno Y; Ohno H
    Phys Rev Lett; 2006 May; 96(18):186601. PubMed ID: 16712383
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Modulation of noise in submicron GaAs/AlGaAs hall devices by gating.
    Li Y; Ren C; Xiong P; von Molnár S; Ohno Y; Ohno H
    Phys Rev Lett; 2004 Dec; 93(24):246602. PubMed ID: 15697840
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Comparative study of Al(x)Ga(1-x)As/GaAs photocathodes with different aluminum concentrations by surface photovoltage spectroscopy.
    Jiao G; Hu C; Liu J; Qian Y
    Appl Opt; 2015 Oct; 54(28):8473-8. PubMed ID: 26479625
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Size dependence of microscopic Hall sensor detection limits.
    Vervaeke K; Simoen E; Borghs G; Moshchalkov VV
    Rev Sci Instrum; 2009 Jul; 80(7):074701. PubMed ID: 19655970
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Low-frequency magnetic noise in micron-scale magnetic tunnel junctions.
    Ingvarsson S; Xiao G; Parkin SS; Gallagher WJ; Grinstein G; Koch RH
    Phys Rev Lett; 2000 Oct; 85(15):3289-92. PubMed ID: 11019323
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures.
    Mani RG; Smet JH; von Klitzing K; Narayanamurti V; Johnson WB; Umansky V
    Nature; 2002 Dec; 420(6916):646-50. PubMed ID: 12478287
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low-Frequency Noise in Graphene Tunnel Junctions.
    Puczkarski P; Wu Q; Sadeghi H; Hou S; Karimi A; Sheng Y; Warner JH; Lambert CJ; Briggs GAD; Mol JA
    ACS Nano; 2018 Sep; 12(9):9451-9460. PubMed ID: 30114902
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Rib waveguide switches with MOS electrooptic control for monolithic integrated optics in GaAs-Al(x)Ga(1-x)As.
    Shelton JC; Reinhart FK; Logan RA
    Appl Opt; 1978 Aug; 17(16):2548-55. PubMed ID: 20203820
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Insitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-gated devices.
    Buizert C; Koppens FH; Pioro-Ladrière M; Tranitz HP; Vink IT; Tarucha S; Wegscheider W; Vandersypen LM
    Phys Rev Lett; 2008 Nov; 101(22):226603. PubMed ID: 19113501
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Observation of reentrant phases induced by short-range disorder in the lowest Landau level of Al{x}Ga{1-x}As/Al{0.32}Ga{0.68}as heterostructures.
    Li W; Luhman DR; Tsui DC; Pfeiffer LN; West KW
    Phys Rev Lett; 2010 Aug; 105(7):076803. PubMed ID: 20868067
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures.
    Heiss M; Gustafsson A; Conesa-Boj S; Peiró F; Morante JR; Abstreiter G; Arbiol J; Samuelson L; Fontcuberta i Morral A
    Nanotechnology; 2009 Feb; 20(7):075603. PubMed ID: 19417424
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Quantitative hydroxyl concentration time-series measurements in turbulent nonpremixed flames.
    Renfro MW; King GB; Laurendeau NM
    Appl Opt; 1999 Jul; 38(21):4596-608. PubMed ID: 18323947
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.
    Sharma D; Amani M; Motayed A; Shah PB; Birdwell AG; Najmaei S; Ajayan PM; Lou J; Dubey M; Li Q; Davydov AV
    Nanotechnology; 2014 Apr; 25(15):155702. PubMed ID: 24642948
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High-resolution X-ray photoelectron spectroscopy of chlorine-terminated GaAs(111)A surfaces.
    Traub MC; Biteen JS; Michalak DJ; Webb LJ; Brunschwig BS; Lewis NS
    J Phys Chem B; 2006 Aug; 110(32):15641-4. PubMed ID: 16898703
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors.
    Rajan NK; Routenberg DA; Chen J; Reed MA
    Appl Phys Lett; 2010 Dec; 97(24):243501. PubMed ID: 21221250
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures.
    Mazur YI; Dorogan VG; de Souza LD; Fan D; Benamara M; Schmidbauer M; Ware ME; Tarasov GG; Yu SQ; Marques GE; Salamo GJ
    Nanotechnology; 2014 Jan; 25(3):035702. PubMed ID: 24346504
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Dry processing of high resolution and high aspect ratio structures in GaAs-Al(x)Ga(1-x) As for integrated optics.
    Somekh S; Casey HC
    Appl Opt; 1977 Jan; 16(1):126-36. PubMed ID: 20168440
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The effect of synthetic method and annealing temperature on metal site preference in Al(1-x)Ga(x)FeO3.
    Walker JD; Grosvenor AP
    Inorg Chem; 2013 Aug; 52(15):8612-20. PubMed ID: 23865511
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Electronic transport in n- and p-type modulation doped Ga(x)In(1-x)N(y)As(1-y)/ GaAs quantum wells.
    Sun Y; Balkan N; Aslan M; Lisesivdin SB; Carrere H; Arikan MC; Marie X
    J Phys Condens Matter; 2009 Apr; 21(17):174210. PubMed ID: 21825414
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Fabry-Perot cavity oscillations of an Al(x)Ga(1-x)As photoluminescence spectrum.
    Bradshaw JL; Devaty RP; Choyke WJ; Messham RL
    Appl Opt; 1990 Jun; 29(16):2367-9. PubMed ID: 20563176
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.