These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
102 related articles for article (PubMed ID: 16803328)
1. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots. Costantini G; Rastelli A; Manzano C; Acosta-Diaz P; Songmuang R; Katsaros G; Schmidt OG; Kern K Phys Rev Lett; 2006 Jun; 96(22):226106. PubMed ID: 16803328 [TBL] [Abstract][Full Text] [Related]
2. General route for the decomposition of InAs quantum dots during the capping process. González D; Reyes DF; Utrilla AD; Ben T; Braza V; Guzman A; Hierro A; Ulloa JM Nanotechnology; 2016 Mar; 27(12):125703. PubMed ID: 26891164 [TBL] [Abstract][Full Text] [Related]
3. Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure. Lu W; Bozkurt M; Keizer JG; Rohel T; Folliot H; Bertru N; Koenraad PM Nanotechnology; 2011 Feb; 22(5):055703. PubMed ID: 21178229 [TBL] [Abstract][Full Text] [Related]
4. Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots. Zieliński M J Phys Condens Matter; 2013 Nov; 25(46):465301. PubMed ID: 24129261 [TBL] [Abstract][Full Text] [Related]
8. Wave-function mapping of InAs quantum dots by scanning tunneling spectroscopy. Maltezopoulos T; Bolz A; Meyer C; Heyn C; Hansen W; Morgenstern M; Wiesendanger R Phys Rev Lett; 2003 Nov; 91(19):196804. PubMed ID: 14611601 [TBL] [Abstract][Full Text] [Related]
9. Temperature dependence of surface photovoltage spectroscopy in vertically coupled self-organized InAs/GaAs quantum dots. Chan CH; Huang YS; Wang JS; Tiong KK Opt Express; 2007 Feb; 15(4):1898-906. PubMed ID: 19532428 [TBL] [Abstract][Full Text] [Related]
10. High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer. Wang Y; Zou J; Zhao ZM; Hao Z; Wang KL Nanotechnology; 2009 Jul; 20(30):305301. PubMed ID: 19581699 [TBL] [Abstract][Full Text] [Related]
12. Effects of applied magnetic fields and hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots. Duque CA; Porras-Montenegro N; Barticevic Z; Pacheco M; Oliveira LE J Phys Condens Matter; 2006 Feb; 18(6):1877-84. PubMed ID: 21697562 [TBL] [Abstract][Full Text] [Related]
13. Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer. Sabaeian M; Khaledi-Nasab A Appl Opt; 2012 Jun; 51(18):4176-85. PubMed ID: 22722295 [TBL] [Abstract][Full Text] [Related]
14. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition. Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334 [TBL] [Abstract][Full Text] [Related]
15. Surface exchange and shape transitions of PbSe quantum dots during overgrowth. Abtin L; Springholz G; Holy V Phys Rev Lett; 2006 Dec; 97(26):266103. PubMed ID: 17280432 [TBL] [Abstract][Full Text] [Related]
16. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy. Morales-Cortés H; Mejía-García C; Méndez-García VH; Vázquez-Cortés D; Rojas-Ramírez JS; Contreras-Guerrero R; Ramírez-López M; Martínez-Velis I; López-López M Nanotechnology; 2010 Apr; 21(13):134012. PubMed ID: 20208110 [TBL] [Abstract][Full Text] [Related]
17. Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer. Chakrabarti S; Halder N; Sengupta S; Ghosh S; Mishima TD; Stanley CR Nanotechnology; 2008 Dec; 19(50):505704. PubMed ID: 19942781 [TBL] [Abstract][Full Text] [Related]
19. Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer. He J; Wu Y; Wang KL Nanotechnology; 2010 Jun; 21(25):255705. PubMed ID: 20516585 [TBL] [Abstract][Full Text] [Related]