153 related articles for article (PubMed ID: 16983153)
1. Structural characterization of Ni2Si pseudoepitaxial transrotational structures on [001] Si.
Alberti A; Bongiorno C; Alippi P; La Magna A; Spinella C; Rimini E
Acta Crystallogr B; 2006 Oct; 62(Pt 5):729-36. PubMed ID: 16983153
[TBL] [Abstract][Full Text] [Related]
2. Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon.
Alberti A; Bongiorno C; Cafra B; Mannino G; Rimini E; Metzger T; Mocuta C; Kammler T; Feudel T
Acta Crystallogr B; 2005 Oct; 61(Pt 5):486-91. PubMed ID: 16186648
[TBL] [Abstract][Full Text] [Related]
3. Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.
Łaszcz A; Katcki J; Ratajczak J; Tang X; Dubois E
J Microsc; 2006 Oct; 224(Pt 1):38-41. PubMed ID: 17100902
[TBL] [Abstract][Full Text] [Related]
4. Low-temperature epitaxial Ni silicidation: the role of hyperthermal species.
Tsubouchi N; Horino Y
J Chem Phys; 2005 Jun; 122(21):214704. PubMed ID: 15974759
[TBL] [Abstract][Full Text] [Related]
5. Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer.
Moutanabbir O; Reiche M; Zakharov N; Naumann F; Petzold M
Nanotechnology; 2011 Jan; 22(4):045701. PubMed ID: 21157010
[TBL] [Abstract][Full Text] [Related]
6. Formation of aligned nanosilicide structures in a MBE-grown Au/Si(110) system: a real-time temperature-dependent TEM study.
Bhatta UM; Dash JK; Roy A; Rath A; Satyam PV
J Phys Condens Matter; 2009 May; 21(20):205403. PubMed ID: 21825530
[TBL] [Abstract][Full Text] [Related]
7. Energy-loss near-edge structure (ELNES) and first-principles calculation of electronic structure of nickel silicide systems.
Kawasaki N; Sugiyama N; Otsuka Y; Hashimoto H; Tsujimoto M; Kurata H; Isoda S
Ultramicroscopy; 2008 Apr; 108(5):399-406. PubMed ID: 17697750
[TBL] [Abstract][Full Text] [Related]
8. High resolution transmission electron microscopy studies of metal/ceramics interfaces.
Ikuhara Y; Pirouz P
Microsc Res Tech; 1998 Feb; 40(3):206-41. PubMed ID: 9518055
[TBL] [Abstract][Full Text] [Related]
9. Microstructural investigation of nickel silicide thin films and the silicide-silicon interface using transmission electron microscopy.
Bhaskaran M; Sriram S; Mitchell DR; Short KT; Holland AS; Mitchell A
Micron; 2009 Jan; 40(1):11-4. PubMed ID: 18337112
[TBL] [Abstract][Full Text] [Related]
10. Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires.
Ogata K; Sutter E; Zhu X; Hofmann S
Nanotechnology; 2011 Sep; 22(36):365305. PubMed ID: 21841219
[TBL] [Abstract][Full Text] [Related]
11. Crystalline structures and misfit strain inside Er silicide nanocrystals self-assembled on Si(001) substrates.
Ding T; Wu Y; Song J; Li J; Huang H; Zou J; Cai Q
Nanotechnology; 2011 Jun; 22(24):245707. PubMed ID: 21543833
[TBL] [Abstract][Full Text] [Related]
12. In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon.
Bhaskaran M; Sriram S; Perova TS; Ermakov V; Thorogood GJ; Short KT; Holland AS
Micron; 2009 Jan; 40(1):89-93. PubMed ID: 18467110
[TBL] [Abstract][Full Text] [Related]
13. High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer.
Wang Y; Zou J; Zhao ZM; Hao Z; Wang KL
Nanotechnology; 2009 Jul; 20(30):305301. PubMed ID: 19581699
[TBL] [Abstract][Full Text] [Related]
14. Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction.
Akaogi T; Tsuda K; Terauchi M; Tanaka M
J Electron Microsc (Tokyo); 2006 Jun; 55(3):129-35. PubMed ID: 16825201
[TBL] [Abstract][Full Text] [Related]
15. Synthesis and characterization of cyclotriphosphazenes containing silicon as single solid-state precursors for the formation of silicon/phosphorus nanostructured materials.
Díaz C; Valenzuela ML; Bravo D; Lavayen V; O'Dwyer C
Inorg Chem; 2008 Dec; 47(24):11561-9. PubMed ID: 18975936
[TBL] [Abstract][Full Text] [Related]
16. Quantitative and easy estimation of a crystal bending effect using low-order CBED patterns.
Yamazaki T; Kashiwagi A; Kuramochi K; Ohtsuka M; Hashimoto I; Watanabe K
J Electron Microsc (Tokyo); 2008 Dec; 57(6):181-7. PubMed ID: 18849570
[TBL] [Abstract][Full Text] [Related]
17. Microstructural and compositional analysis of strontium-doped lead zirconate titanate thin films on gold-coated silicon substrates.
Sriram S; Bhaskaran M; Mitchell DR; Short KT; Holland AS; Mitchell A
Microsc Microanal; 2009 Feb; 15(1):30-5. PubMed ID: 19144255
[TBL] [Abstract][Full Text] [Related]
18. Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.
Bhaskaran M; Sriram S; Holland AS; Evans PJ
Micron; 2009 Jan; 40(1):99-103. PubMed ID: 18276146
[TBL] [Abstract][Full Text] [Related]
19. Silicon nanowire polytypes: identification by Raman spectroscopy, generation mechanism, and misfit strain in homostructures.
Lopez FJ; Givan U; Connell JG; Lauhon LJ
ACS Nano; 2011 Nov; 5(11):8958-66. PubMed ID: 22017649
[TBL] [Abstract][Full Text] [Related]
20. Linear heterostructured Ni
Sheehan M; Ramasse QM; Geaney H; Ryan KM
Nanoscale; 2018 Oct; 10(40):19182-19187. PubMed ID: 30302485
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]