These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
117 related articles for article (PubMed ID: 17358549)
1. Sculpting semiconductor heteroepitaxial islands: from dots to rods. Robinson JT; Walko DA; Arms DA; Tinberg DS; Evans PG; Cao Y; Liddle JA; Rastelli A; Schmidt OG; Dubon OD Phys Rev Lett; 2007 Mar; 98(10):106102. PubMed ID: 17358549 [TBL] [Abstract][Full Text] [Related]
2. Ge island assembly on metal-patterned Si: truncated pyramids, nanorods, and beyond. Robinson JT; Dubon OD J Nanosci Nanotechnol; 2008 Jan; 8(1):56-68. PubMed ID: 18468053 [TBL] [Abstract][Full Text] [Related]
3. Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns. Niu G; Capellini G; Lupina G; Niermann T; Salvalaglio M; Marzegalli A; Schubert MA; Zaumseil P; Krause HM; Skibitzki O; Lehmann M; Montalenti F; Xie YH; Schroeder T ACS Appl Mater Interfaces; 2016 Jan; 8(3):2017-26. PubMed ID: 26709534 [TBL] [Abstract][Full Text] [Related]
4. Global faceting behavior of strained Ge islands on Si. Robinson JT; Rastelli A; Schmidt O; Dubon OD Nanotechnology; 2009 Feb; 20(8):085708. PubMed ID: 19417469 [TBL] [Abstract][Full Text] [Related]
5. Metal-induced assembly of a semiconductor island lattice: Ge truncated pyramids on Au-patterned Si. Robinson JT; Liddle JA; Minor A; Radmilovic V; Yi DO; Greaney PA; Long KN; Chrzan DC; Dubon OD Nano Lett; 2005 Oct; 5(10):2070-3. PubMed ID: 16218739 [TBL] [Abstract][Full Text] [Related]
6. Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates. Grydlik M; Langer G; Fromherz T; Schäffler F; Brehm M Nanotechnology; 2013 Mar; 24(10):105601. PubMed ID: 23416837 [TBL] [Abstract][Full Text] [Related]
7. Effect of strain on the appearance of subcritical nuclei of ge nanohuts on Si(001). Goldfarb I Phys Rev Lett; 2005 Jul; 95(2):025501. PubMed ID: 16090695 [TBL] [Abstract][Full Text] [Related]
8. Self-ordering of a Ge island single layer induced by Si overgrowth. Capellini G; De Seta M; Evangelisti F; Zinovyev VA; Vastola G; Montalenti F; Miglio L Phys Rev Lett; 2006 Mar; 96(10):106102. PubMed ID: 16605763 [TBL] [Abstract][Full Text] [Related]
9. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers. Niu G; Capellini G; Schubert MA; Niermann T; Zaumseil P; Katzer J; Krause HM; Skibitzki O; Lehmann M; Xie YH; von Känel H; Schroeder T Sci Rep; 2016 Mar; 6():22709. PubMed ID: 26940260 [TBL] [Abstract][Full Text] [Related]
10. Morphology Analysis of Si Island Arrays on Si(001). González-González A; Alonso M; Navarro E; Sacedón JL; Ruiz A Nanoscale Res Lett; 2010 Aug; 5(12):1882-7. PubMed ID: 21170139 [TBL] [Abstract][Full Text] [Related]
11. Addition of Mn to Ge quantum dot surfaces--interaction with the Ge QD {105} facet and the Ge(001) wetting layer. Nolph CA; Kassim JK; Floro JA; Reinke P J Phys Condens Matter; 2013 Aug; 25(31):315801. PubMed ID: 23835541 [TBL] [Abstract][Full Text] [Related]
12. Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands. Brehm M; Lichtenberger H; Fromherz T; Springholz G Nanoscale Res Lett; 2011 Jan; 6(1):70. PubMed ID: 21711579 [TBL] [Abstract][Full Text] [Related]
13. Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots. Chen HM; Kuan CH; Suen YW; Luo GL; Lai YP; Wang FM; Chen ST Nanotechnology; 2012 Jan; 23(1):015303. PubMed ID: 22155926 [TBL] [Abstract][Full Text] [Related]
14. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering. Ke SY; Yang J; Qiu F; Wang ZQ; Wang C; Yang Y Nanotechnology; 2015 Nov; 26(44):445602. PubMed ID: 26457572 [TBL] [Abstract][Full Text] [Related]
15. Equilibrium model of bimodal distributions of epitaxial island growth. Rudd RE; Briggs GA; Sutton AP; Medeiros-Ribeiro G; Williams RS Phys Rev Lett; 2003 Apr; 90(14):146101. PubMed ID: 12731931 [TBL] [Abstract][Full Text] [Related]
16. Reversible shape evolution of Ge islands on Si(001). Rastelli A; Kummer M; von Känel H Phys Rev Lett; 2001 Dec; 87(25):256101. PubMed ID: 11736588 [TBL] [Abstract][Full Text] [Related]
17. In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si. Ross FM; Tersoff J; Reuter M; Legoues FK; Tromp RM Microsc Res Tech; 1998 Aug; 42(4):281-94. PubMed ID: 9779833 [TBL] [Abstract][Full Text] [Related]
18. Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source. Vanacore GM; Zani M; Bollani M; Bonera E; Nicotra G; Osmond J; Capellini G; Isella G; Tagliaferri A Nanotechnology; 2014 Apr; 25(13):135606. PubMed ID: 24594569 [TBL] [Abstract][Full Text] [Related]
19. Kinetic evolution and equilibrium morphology of strained islands. Rastelli A; Stoffel M; Tersoff J; Kar GS; Schmidt OG Phys Rev Lett; 2005 Jul; 95(2):026103. PubMed ID: 16090703 [TBL] [Abstract][Full Text] [Related]
20. Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates. Chen HM; Suen YW; Chen SJ; Luo GL; Lai YP; Chen ST; Lee CH; Kuan CH Nanotechnology; 2014 Nov; 25(47):475301. PubMed ID: 25369731 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]