158 related articles for article (PubMed ID: 17455479)
1. Magnetic random access memory (MRAM).
Zheng Y; Wu Y; Lil K; Qiu J; Han G; Guo Z; Luo P; An L; Liu Z; Wang L; Tan SG; Zong B; Liu B
J Nanosci Nanotechnol; 2007 Jan; 7(1):117-37. PubMed ID: 17455479
[TBL] [Abstract][Full Text] [Related]
2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers.
Parkin SS; Kaiser C; Panchula A; Rice PM; Hughes B; Samant M; Yang SH
Nat Mater; 2004 Dec; 3(12):862-7. PubMed ID: 15516928
[TBL] [Abstract][Full Text] [Related]
3. Tunneling magnetoresistive heads for magnetic data storage.
Mao S
J Nanosci Nanotechnol; 2007 Jan; 7(1):1-12. PubMed ID: 17455473
[TBL] [Abstract][Full Text] [Related]
4. Field dependence of switching currents in an exchange biased spin valve.
Nguyen HY; Joo SJ; Jung K; Shin KH
J Nanosci Nanotechnol; 2007 Jan; 7(1):344-9. PubMed ID: 17455502
[TBL] [Abstract][Full Text] [Related]
5. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions.
Yuasa S; Nagahama T; Fukushima A; Suzuki Y; Ando K
Nat Mater; 2004 Dec; 3(12):868-71. PubMed ID: 15516927
[TBL] [Abstract][Full Text] [Related]
6. Simulation-based comparison of cell design concepts for phase change random access memory.
Kim DH; Merget F; Först M; Kurz H
J Nanosci Nanotechnol; 2007 Jan; 7(1):298-305. PubMed ID: 17455495
[TBL] [Abstract][Full Text] [Related]
7. Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 density.
Lee W; Han H; Lotnyk A; Schubert MA; Senz S; Alexe M; Hesse D; Baik S; Gösele U
Nat Nanotechnol; 2008 Jul; 3(7):402-7. PubMed ID: 18654563
[TBL] [Abstract][Full Text] [Related]
8. Nanophase change for data storage applications.
Shi LP; Chong TC
J Nanosci Nanotechnol; 2007 Jan; 7(1):65-93. PubMed ID: 17455476
[TBL] [Abstract][Full Text] [Related]
9. Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.
Park IS; Lee JH; Lee S; Ahn J
J Nanosci Nanotechnol; 2007 Nov; 7(11):4139-42. PubMed ID: 18047136
[TBL] [Abstract][Full Text] [Related]
10. Integrated head design using a nanobeak antenna for thermally assisted magnetic recording.
Matsumoto T; Akagi F; Mochizuki M; Miyamoto H; Stipe B
Opt Express; 2012 Aug; 20(17):18946-54. PubMed ID: 23038534
[TBL] [Abstract][Full Text] [Related]
11. MEMS-based probe recording technology.
Yang J
J Nanosci Nanotechnol; 2007 Jan; 7(1):181-92. PubMed ID: 17455483
[TBL] [Abstract][Full Text] [Related]
12. Memory effects based on random networks of single-walled carbon nanotubes.
Lee KW; Heo KY; Kim KM; Kim HJ
Nanotechnology; 2009 Oct; 20(40):405210. PubMed ID: 19752496
[TBL] [Abstract][Full Text] [Related]
13. Nanoscale ferroelectric information storage based on scanning nonlinear dielectric microscopy.
Cho Y
J Nanosci Nanotechnol; 2007 Jan; 7(1):105-16. PubMed ID: 17455478
[TBL] [Abstract][Full Text] [Related]
14. Novel HDD-type SNDM ferroelectric data storage system aimed at high-speed data transfer with single probe operation.
Hiranaga Y; Uda T; Kurihashi Y; Tanaka K; Cho Y
IEEE Trans Ultrason Ferroelectr Freq Control; 2007 Dec; 54(12):2523-8. PubMed ID: 18276549
[TBL] [Abstract][Full Text] [Related]
15. Two-dimensional ultrahigh-density X-ray optical memory.
Bezirganyan HP; Bezirganyan SE; Bezirganyan HH; Bezirganyan PH
J Nanosci Nanotechnol; 2007 Jan; 7(1):306-15. PubMed ID: 17455496
[TBL] [Abstract][Full Text] [Related]
16. Molecular memory based on nanowire-molecular wire heterostructures.
Li C; Lei B; Fan W; Zhang D; Meyyappan M; Zhou C
J Nanosci Nanotechnol; 2007 Jan; 7(1):138-50. PubMed ID: 17455480
[TBL] [Abstract][Full Text] [Related]
17. FePt nanocluster films for high-density magnetic recording.
Xu YF; Yan ML; Sellmyer DJ
J Nanosci Nanotechnol; 2007 Jan; 7(1):206-24. PubMed ID: 17455485
[TBL] [Abstract][Full Text] [Related]
18. Fabrication of magnetic nanodot arrays for patterned magnetic recording media.
Sato H; Homma T
J Nanosci Nanotechnol; 2007 Jan; 7(1):225-31. PubMed ID: 17455486
[TBL] [Abstract][Full Text] [Related]
19. High temperature polyimide containing anthracene moiety and its structure, interface, and nonvolatile memory behavior.
Park S; Kim K; Kim DM; Kwon W; Choi J; Ree M
ACS Appl Mater Interfaces; 2011 Mar; 3(3):765-73. PubMed ID: 21338065
[TBL] [Abstract][Full Text] [Related]
20. Physics of perpendicular recording with a patterned soft underlayer.
Khizroev S; Hijazi Y; Amos N; Felissaint E; Joshi N; Ikkawi R; Chomko R; Litvinov D
J Nanosci Nanotechnol; 2007 Jan; 7(1):243-54. PubMed ID: 17455488
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
