223 related articles for article (PubMed ID: 17766103)
1. AlGaN/GaN heterostructures for non-invasive cell electrophysiological measurements.
Yu J; Jha SK; Xiao L; Liu Q; Wang P; Surya C; Yang M
Biosens Bioelectron; 2007 Nov; 23(4):513-9. PubMed ID: 17766103
[TBL] [Abstract][Full Text] [Related]
2. Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.
Alifragis Y; Volosirakis A; Chaniotakis NA; Konstantinidis G; Adikimenakis A; Georgakilas A
Biosens Bioelectron; 2007 Jun; 22(12):2796-801. PubMed ID: 17098415
[TBL] [Abstract][Full Text] [Related]
3. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.
Lee HH; Bae M; Jo SH; Shin JK; Son DH; Won CH; Jeong HM; Lee JH; Kang SW
Sensors (Basel); 2015 Jul; 15(8):18416-26. PubMed ID: 26225981
[TBL] [Abstract][Full Text] [Related]
4. In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors.
Müntze GM; Pouokam E; Steidle J; Schäfer W; Sasse A; Röth K; Diener M; Eickhoff M
Biosens Bioelectron; 2016 Mar; 77():1048-54. PubMed ID: 26547432
[TBL] [Abstract][Full Text] [Related]
5. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
Li Y; Xiang J; Qian F; Gradecak S; Wu Y; Yan H; Blom DA; Lieber CM
Nano Lett; 2006 Jul; 6(7):1468-73. PubMed ID: 16834431
[TBL] [Abstract][Full Text] [Related]
6. N-Channel field-effect transistors with floating gates for extracellular recordings.
Meyburg S; Goryll M; Moers J; Ingebrandt S; Böcker-Meffert S; Lüth H; Offenhäusser A
Biosens Bioelectron; 2006 Jan; 21(7):1037-44. PubMed ID: 16029948
[TBL] [Abstract][Full Text] [Related]
7. Nerve cell response to inhibitors recorded with an aluminum-galliumnitride/galliumnitride field-effect transistor.
Gebinoga M; Mai P; Donahue M; Kittler M; Cimalla I; Lübbers B; Klett M; Lebedev V; Silveira L; Singh S; Schober A
J Neurosci Methods; 2012; 206(2):195-9. PubMed ID: 22426140
[TBL] [Abstract][Full Text] [Related]
8. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.
Chu BH; Kang BS; Hung SC; Chen KH; Ren F; Sciullo A; Gila BP; Pearton SJ
J Diabetes Sci Technol; 2010 Jan; 4(1):171-9. PubMed ID: 20167182
[TBL] [Abstract][Full Text] [Related]
9. Quantitative analysis of immobilized penicillinase using enzyme-modified AlGaN/GaN field-effect transistors.
Müntze GM; Baur B; Schäfer W; Sasse A; Howgate J; Röth K; Eickhoff M
Biosens Bioelectron; 2015 Feb; 64():605-10. PubMed ID: 25314619
[TBL] [Abstract][Full Text] [Related]
10. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.
Abidin MS; Hashim AM; Sharifabad ME; Rahman SF; Sadoh T
Sensors (Basel); 2011; 11(3):3067-77. PubMed ID: 22163786
[TBL] [Abstract][Full Text] [Related]
11. Direct label-free electrical immunodetection of transplant rejection protein biomarker in physiological buffer using floating gate AlGaN/GaN high electron mobility transistors.
Tulip FS; Eteshola E; Desai S; Mostafa S; Roopa S; Evans B; Islam SK
IEEE Trans Nanobioscience; 2014 Jun; 13(2):138-45. PubMed ID: 24803243
[TBL] [Abstract][Full Text] [Related]
12. An electronic enzyme-linked immunosorbent assay platform for protein analysis based on magnetic beads and AlGaN/GaN high electron mobility transistors.
Wang J; Gu Z; Liu X; Zhao L; Peng H; Li J
Analyst; 2020 Apr; 145(7):2725-2730. PubMed ID: 32077869
[TBL] [Abstract][Full Text] [Related]
13. Electronic Biosensors Based on III-Nitride Semiconductors.
Kirste R; Rohrbaugh N; Bryan I; Bryan Z; Collazo R; Ivanisevic A
Annu Rev Anal Chem (Palo Alto Calif); 2015; 8():149-69. PubMed ID: 26048553
[TBL] [Abstract][Full Text] [Related]
14. Time-dependent observation of individual cellular binding events to field-effect transistors.
Schäfer S; Eick S; Hofmann B; Dufaux T; Stockmann R; Wrobel G; Offenhäusser A; Ingebrandt S
Biosens Bioelectron; 2009 Jan; 24(5):1201-8. PubMed ID: 18692383
[TBL] [Abstract][Full Text] [Related]
15. The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?
Mao LF; Ning HS; Wang JY
PLoS One; 2015; 10(6):e0128438. PubMed ID: 26039589
[TBL] [Abstract][Full Text] [Related]
16. Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor.
Mahaboob I; Reinertsen RJ; McEwen B; Hogan K; Rocco E; Melendez JA; Cady NC; Shahedipour-Sandvik F
Exp Biol Med (Maywood); 2021 Mar; 246(5):523-528. PubMed ID: 33203229
[TBL] [Abstract][Full Text] [Related]
17. CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.
Linkohr S; Pletschen W; Schwarz SU; Anzt J; Cimalla V; Ambacher O
J Biotechnol; 2013 Feb; 163(4):354-61. PubMed ID: 22940651
[TBL] [Abstract][Full Text] [Related]
18. Isolated photosystem I reaction centers on a functionalized gated high electron mobility transistor.
Eliza SA; Lee I; Tulip FS; Mostafa S; Greenbaum E; Ericson MN; Islam SK
IEEE Trans Nanobioscience; 2011 Sep; 10(3):201-8. PubMed ID: 21926029
[TBL] [Abstract][Full Text] [Related]
19. Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions.
Yang C; Sun J; Zhang Y; Tang J; Liu Z; Zhan T; Wang DB; Zhang G; Liu Z; Zhang XE
Biosens Bioelectron; 2024 Aug; 257():116171. PubMed ID: 38636317
[TBL] [Abstract][Full Text] [Related]
20. Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum.
Tai TY; Sinha A; Sarangadharan I; Pulikkathodi AK; Wang SL; Lee GY; Chyi JI; Shiesh SC; Lee GB; Wang YL
Anal Chem; 2019 May; 91(9):5953-5960. PubMed ID: 30994326
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]