270 related articles for article (PubMed ID: 18047136)
1. Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory.
Park IS; Lee JH; Lee S; Ahn J
J Nanosci Nanotechnol; 2007 Nov; 7(11):4139-42. PubMed ID: 18047136
[TBL] [Abstract][Full Text] [Related]
2. Resistive switching in nanogap systems on SiO2 substrates.
Yao J; Zhong L; Zhang Z; He T; Jin Z; Wheeler PJ; Natelson D; Tour JM
Small; 2009 Dec; 5(24):2910-5. PubMed ID: 19787676
[TBL] [Abstract][Full Text] [Related]
3. Two-terminal nonvolatile memories based on single-walled carbon nanotubes.
Yao J; Jin Z; Zhong L; Natelson D; Tour JM
ACS Nano; 2009 Dec; 3(12):4122-6. PubMed ID: 19904998
[TBL] [Abstract][Full Text] [Related]
4. From stochastic single atomic switch to nanoscale resistive memory device.
Geresdi A; Halbritter A; Gyenis A; Makk P; Mihály G
Nanoscale; 2011 Apr; 3(4):1504-7. PubMed ID: 21409261
[TBL] [Abstract][Full Text] [Related]
5. Photo-stimulated resistive switching of ZnO nanorods.
Park J; Lee S; Yong K
Nanotechnology; 2012 Sep; 23(38):385707. PubMed ID: 22948083
[TBL] [Abstract][Full Text] [Related]
6. Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution.
Medeiros-Ribeiro G; Perner F; Carter R; Abdalla H; Pickett MD; Williams RS
Nanotechnology; 2011 Mar; 22(9):095702. PubMed ID: 21258143
[TBL] [Abstract][Full Text] [Related]
7. Key integration technologies for nanoscale FRAMs.
Jung DJ; Kim HH; Kim K
IEEE Trans Ultrason Ferroelectr Freq Control; 2007 Dec; 54(12):2535-40. PubMed ID: 18276551
[TBL] [Abstract][Full Text] [Related]
8. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties.
Lee JS; Cho J; Lee C; Kim I; Park J; Kim YM; Shin H; Lee J; Caruso F
Nat Nanotechnol; 2007 Dec; 2(12):790-5. PubMed ID: 18654433
[TBL] [Abstract][Full Text] [Related]
9. High temperature polyimide containing anthracene moiety and its structure, interface, and nonvolatile memory behavior.
Park S; Kim K; Kim DM; Kwon W; Choi J; Ree M
ACS Appl Mater Interfaces; 2011 Mar; 3(3):765-73. PubMed ID: 21338065
[TBL] [Abstract][Full Text] [Related]
10. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
Niu G; Kim HD; Roelofs R; Perez E; Schubert MA; Zaumseil P; Costina I; Wenger C
Sci Rep; 2016 Jun; 6():28155. PubMed ID: 27312225
[TBL] [Abstract][Full Text] [Related]
11. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory.
Lee SH; Jung Y; Agarwal R
Nat Nanotechnol; 2007 Oct; 2(10):626-30. PubMed ID: 18654387
[TBL] [Abstract][Full Text] [Related]
12. Thin films: theory leads the way to new devices.
Ramesh R
Nat Nanotechnol; 2008 Jan; 3(1):7-8. PubMed ID: 18654438
[No Abstract] [Full Text] [Related]
13. Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 density.
Lee W; Han H; Lotnyk A; Schubert MA; Senz S; Alexe M; Hesse D; Baik S; Gösele U
Nat Nanotechnol; 2008 Jul; 3(7):402-7. PubMed ID: 18654563
[TBL] [Abstract][Full Text] [Related]
14. The mechanism of electroforming of metal oxide memristive switches.
Joshua Yang J; Miao F; Pickett MD; Ohlberg DA; Stewart DR; Lau CN; Williams RS
Nanotechnology; 2009 May; 20(21):215201. PubMed ID: 19423925
[TBL] [Abstract][Full Text] [Related]
15. Surface patterning: Ancients inspire modern memory.
Gregg JM
Nat Nanotechnol; 2008 Jul; 3(7):380-1. PubMed ID: 18654557
[No Abstract] [Full Text] [Related]
16. Memory applications and electrical bistability of semiconducting nanoparticles: do the phenomena depend on bandgap?
Das BC; Pal AJ
Small; 2008 May; 4(5):542-7. PubMed ID: 18421723
[No Abstract] [Full Text] [Related]
17. Nanoscale memory cell based on a nanoelectromechanical switched capacitor.
Jang JE; Cha SN; Choi YJ; Kang DJ; Butler TP; Hasko DG; Jung JE; Kim JM; Amaratunga GA
Nat Nanotechnol; 2008 Jan; 3(1):26-30. PubMed ID: 18654446
[TBL] [Abstract][Full Text] [Related]
18. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.
Venugopal G; Kim SJ
J Nanosci Nanotechnol; 2012 Nov; 12(11):8522-5. PubMed ID: 23421239
[TBL] [Abstract][Full Text] [Related]
19. Generic relevance of counter charges for cation-based nanoscale resistive switching memories.
Tappertzhofen S; Valov I; Tsuruoka T; Hasegawa T; Waser R; Aono M
ACS Nano; 2013 Jul; 7(7):6396-402. PubMed ID: 23786236
[TBL] [Abstract][Full Text] [Related]
20. Nanoscale protein-based memory device composed of recombinant azurin.
Kim SU; Yagati AK; Min J; Choi JW
Biomaterials; 2010 Feb; 31(6):1293-8. PubMed ID: 19857891
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
