These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

114 related articles for article (PubMed ID: 18197239)

  • 1. High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm.
    Hopkins JM; Hempler N; Rösener B; Schulz N; Rattunde M; Manz C; Köhler K; Wagner J; Burns D
    Opt Lett; 2008 Jan; 33(2):201-3. PubMed ID: 18197239
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High-power quantum-dot-based semiconductor disk laser.
    Butkus M; Wilcox KG; Rautiainen J; Okhotnikov OG; Mikhrin SS; Krestnikov IL; Kovsh AR; Hoffmann M; Südmeyer T; Keller U; Rafailov EU
    Opt Lett; 2009 Jun; 34(11):1672-4. PubMed ID: 19488144
    [TBL] [Abstract][Full Text] [Related]  

  • 3. 11 W single gain-chip dilute nitride disk laser emitting around 1180 nm.
    Korpijärvi VM; Leinonen T; Puustinen J; Härkönen A; Guina MD
    Opt Express; 2010 Dec; 18(25):25633-41. PubMed ID: 21164909
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Highly integrated coupled cavity photonic crystal laser with on-chip power control on the AlGaIn/AsSb material system.
    Müller M; Bauer A; Lehnhardt T; Forchel A
    Nanotechnology; 2008 Jul; 19(26):265203. PubMed ID: 21828675
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser.
    Rösener B; Rattunde M; Moser R; Kaspar S; Töpper T; Manz C; Köhler K; Wagner J
    Opt Lett; 2011 Feb; 36(3):319-21. PubMed ID: 21283176
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Power-scalable 1.57 microm mode-locked semiconductor disk laser using wafer fusion.
    Saarinen EJ; Puustinen J; Sirbu A; Mereuta A; Caliman A; Kapon E; Okhotnikov OG
    Opt Lett; 2009 Oct; 34(20):3139-41. PubMed ID: 19838252
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band.
    Rantamäki A; Sirbu A; Saarinen EJ; Lyytikäinen J; Mereuta A; Iakovlev V; Kapon E; Okhotnikov OG
    Opt Lett; 2014 Aug; 39(16):4855-8. PubMed ID: 25121892
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Highly efficient Er,Yb-doped fiber laser with 188W free-running and > 100W tunable output power.
    Shen DY; Sahu JK; Clarkson WA
    Opt Express; 2005 Jun; 13(13):4916-21. PubMed ID: 19498479
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Single-frequency operation of a high-power, long-wavelength semiconductor disk laser.
    Lindberg H; Larsson A; Strassner M
    Opt Lett; 2005 Sep; 30(17):2260-2. PubMed ID: 16190437
    [TBL] [Abstract][Full Text] [Related]  

  • 10. 1-W antimonide-based vertical external cavity surface emitting laser operating at 2-microm.
    Härkönen A; Guina M; Okhotnikov O; Rößner K; Hümmer M; Lehnhardt T; Müller M; Forchel A; Fischer M
    Opt Express; 2006 Jul; 14(14):6479-84. PubMed ID: 19516826
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Tunable continuous-wave diamond Raman laser.
    Parrotta DC; Kemp AJ; Dawson MD; Hastie JE
    Opt Express; 2011 Nov; 19(24):24165-70. PubMed ID: 22109443
    [TBL] [Abstract][Full Text] [Related]  

  • 12. 2.5 W continuous wave output at 665 nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser.
    Mateo CM; Brauch U; Kahle H; Schwarzbäck T; Jetter M; Abdou Ahmed M; Michler P; Graf T
    Opt Lett; 2016 Mar; 41(6):1245-8. PubMed ID: 26977680
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High performance short period superlattice digital alloy InSb/Ga(x)In(1-x)Sb laser emitting at 1.9 µm.
    Müller M; Lehnhardt T; Rößner K; Hümmer M; Werner R; Forchel A
    Nanotechnology; 2007 Jul; 18(26):265302. PubMed ID: 21730396
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Multipass pumped Nd-based thin-disk lasers: continuous-wave laser operation at 1.06 and 0.9 microm with intracavity frequency doubling.
    Pavel N; Lünstedt K; Petermann K; Huber G
    Appl Opt; 2007 Dec; 46(34):8256-63. PubMed ID: 18059665
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber.
    Lindberg H; Sadeghi M; Westlund M; Wang S; Larsson A; Strassner M; Marcinkevicius S
    Opt Lett; 2005 Oct; 30(20):2793-5. PubMed ID: 16252777
    [TBL] [Abstract][Full Text] [Related]  

  • 16. 2-µm Tm:Lu₂O₃ ceramic disk laser intracavity-pumped by a semiconductor disk laser.
    Saarinen EJ; Vasileva E; Antipov O; Penttinen JP; Tavast M; Leinonen T; Okhotnikov OG
    Opt Express; 2013 Oct; 21(20):23844-50. PubMed ID: 24104295
    [TBL] [Abstract][Full Text] [Related]  

  • 17. 33 W continuous output power semiconductor disk laser emitting at 1275 nm.
    Leinonen T; Iakovlev V; Sirbu A; Kapon E; Guina M
    Opt Express; 2017 Mar; 25(6):7008-7013. PubMed ID: 28381042
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier.
    Chi M; Jensen OB; Holm J; Pedersen C; Andersen PE; Erbert G; Sumpf B; Petersen PM
    Opt Express; 2005 Dec; 13(26):10589-96. PubMed ID: 19503273
    [TBL] [Abstract][Full Text] [Related]  

  • 19. 1.4 µm continuous-wave diamond Raman laser.
    Casula R; Penttinen JP; Kemp AJ; Guina M; Hastie JE
    Opt Express; 2017 Dec; 25(25):31377-31383. PubMed ID: 29245812
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.
    Rudin B; Wittwer VJ; Maas DJ; Hoffmann M; Sieber OD; Barbarin Y; Golling M; Südmeyer T; Keller U
    Opt Express; 2010 Dec; 18(26):27582-8. PubMed ID: 21197032
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.