These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
8. Potential barrier for spin-polarized electrons induced by the exchange interaction at the interface in the ferromagnet/semiconductor heterostructure. Lutsev LV J Phys Condens Matter; 2006 Jul; 18(26):5881-94. PubMed ID: 21690804 [TBL] [Abstract][Full Text] [Related]
9. Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor. Tran M; Jaffrès H; Deranlot C; George JM; Fert A; Miard A; Lemaître A Phys Rev Lett; 2009 Jan; 102(3):036601. PubMed ID: 19257375 [TBL] [Abstract][Full Text] [Related]
10. Spin heat accumulation induced by tunneling from a ferromagnet. Vera-Marun IJ; van Wees BJ; Jansen R Phys Rev Lett; 2014 Feb; 112(5):056602. PubMed ID: 24580618 [TBL] [Abstract][Full Text] [Related]
11. Electronic measurement and control of spin transport in silicon. Appelbaum I; Huang B; Monsma DJ Nature; 2007 May; 447(7142):295-8. PubMed ID: 17507978 [TBL] [Abstract][Full Text] [Related]
12. Spin transport in spin filtering magnetic tunneling junctions. Li Y; Lee EK J Nanosci Nanotechnol; 2007 Nov; 7(11):4143-5. PubMed ID: 18047137 [TBL] [Abstract][Full Text] [Related]
13. Electrical detection of spin precession in a metallic mesoscopic spin valve. Jedema FJ; Heersche HB; Filip AT; Baselmans JJ; van Wees BJ Nature; 2002 Apr; 416(6882):713-6. PubMed ID: 11961548 [TBL] [Abstract][Full Text] [Related]
14. Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve. Jedema FJ; Filip AT; van Wees BJ Nature; 2001 Mar; 410(6826):345-8. PubMed ID: 11268205 [TBL] [Abstract][Full Text] [Related]
15. Electrical detection of spin pumping due to the precessing magnetization of a single ferromagnet. Costache MV; Sladkov M; Watts SM; van der Wal CH; van Wees BJ Phys Rev Lett; 2006 Nov; 97(21):216603. PubMed ID: 17155762 [TBL] [Abstract][Full Text] [Related]
16. Room-temperature tunnel magnetoresistance and spin-polarized tunneling through an organic semiconductor barrier. Santos TS; Lee JS; Migdal P; Lekshmi IC; Satpati B; Moodera JS Phys Rev Lett; 2007 Jan; 98(1):016601. PubMed ID: 17358495 [TBL] [Abstract][Full Text] [Related]
17. Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance. Liu C; Patel SJ; Peterson TA; Geppert CC; Christie KD; Stecklein G; Palmstrøm CJ; Crowell PA Nat Commun; 2016 Jan; 7():10296. PubMed ID: 26777243 [TBL] [Abstract][Full Text] [Related]
18. Thermal spin current from a ferromagnet to silicon by Seebeck spin tunnelling. Le Breton JC; Sharma S; Saito H; Yuasa S; Jansen R Nature; 2011 Jun; 475(7354):82-5. PubMed ID: 21716285 [TBL] [Abstract][Full Text] [Related]
19. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. Min BC; Motohashi K; Lodder C; Jansen R Nat Mater; 2006 Oct; 5(10):817-22. PubMed ID: 16980953 [TBL] [Abstract][Full Text] [Related]
20. Impurity-assisted tunneling magnetoresistance under a weak magnetic field. Txoperena O; Song Y; Qing L; Gobbi M; Hueso LE; Dery H; Casanova F Phys Rev Lett; 2014 Oct; 113(14):146601. PubMed ID: 25325651 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]