These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
313 related articles for article (PubMed ID: 18266331)
41. Ferromagnetic germanide in Ge nanowire transistors for spintronics application. Tang J; Wang CY; Hung MH; Jiang X; Chang LT; He L; Liu PH; Yang HJ; Tuan HY; Chen LJ; Wang KL ACS Nano; 2012 Jun; 6(6):5710-7. PubMed ID: 22658951 [TBL] [Abstract][Full Text] [Related]
42. Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors. Simanullang MDK; Wisna GBM; Usami K; Oda S Nanoscale Adv; 2020 Apr; 2(4):1465-1472. PubMed ID: 36132315 [TBL] [Abstract][Full Text] [Related]
43. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on Si Wen F; Tutuc E Nano Lett; 2018 Jan; 18(1):94-100. PubMed ID: 29185763 [TBL] [Abstract][Full Text] [Related]
44. Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires. Kim do H; Lee SJ; Lee SH; Myoung JM Chem Commun (Camb); 2016 May; 52(42):6938-41. PubMed ID: 27149060 [TBL] [Abstract][Full Text] [Related]
45. Experimental study on the subthreshold swing of silicon nanowire transistors. Zhang Y; Xiong Y; Yang X; Wang Y; Han W; Yang F J Nanosci Nanotechnol; 2010 Nov; 10(11):7113-6. PubMed ID: 21137876 [TBL] [Abstract][Full Text] [Related]
46. Vertical nanowire heterojunction devices based on a clean Si/Ge interface. Chen L; Fung WY; Lu W Nano Lett; 2013; 13(11):5521-7. PubMed ID: 24134685 [TBL] [Abstract][Full Text] [Related]
47. Scanning photocurrent microscopy analysis of Si nanowire field-effect transistors fabricated by surface etching of the channel. Allen JE; Hemesath ER; Lauhon LJ Nano Lett; 2009 May; 9(5):1903-8. PubMed ID: 19326918 [TBL] [Abstract][Full Text] [Related]
49. Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application. Tomioka K; Izhizaka F; Fukui T Nano Lett; 2015 Nov; 15(11):7253-7. PubMed ID: 26468962 [TBL] [Abstract][Full Text] [Related]
50. Tuning the electrical properties of Si nanowire field-effect transistors by molecular engineering. Bashouti MY; Tung RT; Haick H Small; 2009 Dec; 5(23):2761-9. PubMed ID: 19771570 [TBL] [Abstract][Full Text] [Related]
51. One-dimensional hole gas in germanium/silicon nanowire heterostructures. Lu W; Xiang J; Timko BP; Wu Y; Lieber CM Proc Natl Acad Sci U S A; 2005 Jul; 102(29):10046-51. PubMed ID: 16006507 [TBL] [Abstract][Full Text] [Related]
52. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures. Kral S; Zeiner C; Stöger-Pollach M; Bertagnolli E; den Hertog MI; Lopez-Haro M; Robin E; El Hajraoui K; Lugstein A Nano Lett; 2015 Jul; 15(7):4783-7. PubMed ID: 26052733 [TBL] [Abstract][Full Text] [Related]
53. Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium. Flynn G; Ramasse QM; Ryan KM Nano Lett; 2016 Jan; 16(1):374-80. PubMed ID: 26672625 [TBL] [Abstract][Full Text] [Related]
54. Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire. Park SJ; Jeon DY; Sessi V; Trommer J; Heinzig A; Mikolajick T; Kim GT; Weber WM ACS Appl Mater Interfaces; 2020 Sep; 12(39):43927-43932. PubMed ID: 32880433 [TBL] [Abstract][Full Text] [Related]
56. Multichannel ZnO nanowire field effect transistors by lift-off process. Ebert M; Ghazali NAB; Kiang KS; Zeimpekis I; Maerz B; de Planque MRR; Chong HMH Nanotechnology; 2018 Oct; 29(41):415302. PubMed ID: 30027889 [TBL] [Abstract][Full Text] [Related]
57. Controlling Catalyst-Free Formation and Hole Gas Accumulation by Fabricating Si/Ge Core-Shell and Si/Ge/Si Core-Double Shell Nanowires. Zhang X; Jevasuwan W; Sugimoto Y; Fukata N ACS Nano; 2019 Nov; 13(11):13403-13412. PubMed ID: 31626528 [TBL] [Abstract][Full Text] [Related]
58. Monolithic and Single-Crystalline Aluminum-Silicon Heterostructures. Wind L; Böckle R; Sistani M; Schweizer P; Maeder X; Michler J; Murphey CGE; Cahoon J; Weber WM ACS Appl Mater Interfaces; 2022 Jun; 14(22):26238-26244. PubMed ID: 35621308 [TBL] [Abstract][Full Text] [Related]
59. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy. So H; Pan D; Li L; Zhao J Nanotechnology; 2017 Mar; 28(13):135704. PubMed ID: 28256450 [TBL] [Abstract][Full Text] [Related]
60. Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate. Chen X; Chen S; Hu Q; Zhang SL; Solomon P; Zhang Z ACS Sens; 2019 Feb; 4(2):427-433. PubMed ID: 30632733 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]