203 related articles for article (PubMed ID: 18386934)
1. Nanowire lithography on silicon.
Colli A; Fasoli A; Pisana S; Fu Y; Beecher P; Milne WI; Ferrari AC
Nano Lett; 2008 May; 8(5):1358-62. PubMed ID: 18386934
[TBL] [Abstract][Full Text] [Related]
2. Fabrication of suspended silicon nanowire arrays.
Lee KN; Jung SW; Shin KS; Kim WH; Lee MH; Seong WK
Small; 2008 May; 4(5):642-8. PubMed ID: 18431721
[TBL] [Abstract][Full Text] [Related]
3. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
Schmidt V; Riel H; Senz S; Karg S; Riess W; Gösele U
Small; 2006 Jan; 2(1):85-8. PubMed ID: 17193560
[No Abstract] [Full Text] [Related]
4. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
Chang YK; Hong FC
Nanotechnology; 2009 May; 20(19):195302. PubMed ID: 19420638
[TBL] [Abstract][Full Text] [Related]
5. Fabrication of poly-silicon nano-wire transistors on plastic substrates.
Park C; Lee S; Choi M; Kang M; Jung Y; Hwang S; Ahn D; Lee J; Song C
J Nanosci Nanotechnol; 2007 Nov; 7(11):4150-3. PubMed ID: 18047139
[TBL] [Abstract][Full Text] [Related]
6. High electron mobility InAs nanowire field-effect transistors.
Dayeh SA; Aplin DP; Zhou X; Yu PK; Yu ET; Wang D
Small; 2007 Feb; 3(2):326-32. PubMed ID: 17199246
[TBL] [Abstract][Full Text] [Related]
7. Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
Jeon Y; Kang J; Lee M; Moon T; Kim S
J Nanosci Nanotechnol; 2013 May; 13(5):3350-3. PubMed ID: 23858857
[TBL] [Abstract][Full Text] [Related]
8. Water-mediated Al metal transfer printing with contact inking for fabrication of thin-film transistors.
Oh K; Lee BH; Hwang JK; Lee H; Im S; Sung MM
Small; 2009 Mar; 5(5):558-61. PubMed ID: 19199334
[No Abstract] [Full Text] [Related]
9. Programmable direct-printing nanowire electronic components.
Lee TI; Choi WJ; Moon KJ; Choi JH; Kar JP; Das SN; Kim YS; Baik HK; Myoung JM
Nano Lett; 2010 Mar; 10(3):1016-21. PubMed ID: 20108927
[TBL] [Abstract][Full Text] [Related]
10. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
Yoon A; Hong WK; Lee T
J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128
[TBL] [Abstract][Full Text] [Related]
11. Self-assembling silicon nanowires for device applications using the nanochannel-guided "grow-in-place" approach.
Shan Y; Fonash SJ
ACS Nano; 2008 Mar; 2(3):429-34. PubMed ID: 19206566
[TBL] [Abstract][Full Text] [Related]
12. Fully transparent thin-film transistor devices based on SnO2 nanowires.
Dattoli EN; Wan Q; Guo W; Chen Y; Pan X; Lu W
Nano Lett; 2007 Aug; 7(8):2463-9. PubMed ID: 17595151
[TBL] [Abstract][Full Text] [Related]
13. The growth and characterization of ZnO/ZnTe core-shell nanowires and the electrical properties of ZnO/ZnTe core-shell nanowire field effect transistor.
Chao HY; You SH; Lu JY; Cheng JH; Chang YH; Liang CT; Wu CT
J Nanosci Nanotechnol; 2011 Mar; 11(3):2042-6. PubMed ID: 21449346
[TBL] [Abstract][Full Text] [Related]
14. GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
Tomioka K; Motohisa J; Hara S; Hiruma K; Fukui T
Nano Lett; 2010 May; 10(5):1639-44. PubMed ID: 20377199
[TBL] [Abstract][Full Text] [Related]
15. Localized joule heating as a mask-free technique for the local synthesis of ZnO nanowires on silicon nanodevices.
Chen CC; Lin YS; Sang CH; Sheu JT
Nano Lett; 2011 Nov; 11(11):4736-41. PubMed ID: 22007768
[TBL] [Abstract][Full Text] [Related]
16. Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices.
Walavalkar SS; Homyk AP; Henry MD; Scherer A
Nanoscale; 2013 Feb; 5(3):927-31. PubMed ID: 23292113
[TBL] [Abstract][Full Text] [Related]
17. InAs nanowire transistors as gas sensor and the response mechanism.
Du J; Liang D; Tang H; Gao XP
Nano Lett; 2009 Dec; 9(12):4348-51. PubMed ID: 19739664
[TBL] [Abstract][Full Text] [Related]
18. A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds.
Peng C; Liang X; Chou SY
Nanotechnology; 2009 May; 20(18):185302. PubMed ID: 19420609
[TBL] [Abstract][Full Text] [Related]
19. Reconfigurable silicon nanowire transistors.
Heinzig A; Slesazeck S; Kreupl F; Mikolajick T; Weber WM
Nano Lett; 2012 Jan; 12(1):119-24. PubMed ID: 22111808
[TBL] [Abstract][Full Text] [Related]
20. Correlating the nanostructure and electronic properties of InAs nanowires.
Schroer MD; Petta JR
Nano Lett; 2010 May; 10(5):1618-22. PubMed ID: 20384350
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]