These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

146 related articles for article (PubMed ID: 18518135)

  • 1. Proposal for a new class of materials: spin gapless semiconductors.
    Wang XL
    Phys Rev Lett; 2008 Apr; 100(15):156404. PubMed ID: 18518135
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Monolayer MXenes: promising half-metals and spin gapless semiconductors.
    Gao G; Ding G; Li J; Yao K; Wu M; Qian M
    Nanoscale; 2016 Apr; 8(16):8986-94. PubMed ID: 27074402
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Nodal ring spin gapless semiconductor: New member of spintronic materials.
    Yang T; Cheng Z; Wang X; Wang XL
    J Adv Res; 2021 Feb; 28():43-49. PubMed ID: 33364044
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Spin-Gapless Semiconductors.
    Yue Z; Li Z; Sang L; Wang X
    Small; 2020 Aug; 16(31):e1905155. PubMed ID: 32529745
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Rare earth-based quaternary Heusler compounds
    Wang X; Cheng Z; Liu G; Dai X; Khenata R; Wang L; Bouhemadou A
    IUCrJ; 2017 Nov; 4(Pt 6):758-768. PubMed ID: 29123678
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Discovery of a novel spin-polarized nodal ring in a two-dimensional HK lattice.
    Zhang L; Zhang SF; Ji WX; Zhang CW; Li P; Wang PJ; Li SS; Yan SS
    Nanoscale; 2018 Nov; 10(44):20748-20753. PubMed ID: 30402628
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High spin polarization in formamidinium transition metal iodides: first principles prediction of novel half-metals and spin gapless semiconductors.
    Huang HM; Cao ML; Jiang ZY; Xiong YC; Zhang X; Luo SJ; Laref A
    Phys Chem Chem Phys; 2019 Jul; 21(29):16213-16222. PubMed ID: 31298246
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys.
    Zhang YJ; Liu ZH; Wu ZG; Ma XQ
    IUCrJ; 2019 Jul; 6(Pt 4):610-618. PubMed ID: 31316805
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Strain-induced spin-gapless semiconductors and pure thermal spin-current in magnetic black arsenic-phosphorus monolayers.
    Ji Y; Tan X; Yue X; Sun Y; Wang Y; Liang H; Li Q; Sun X; Wu D
    Phys Chem Chem Phys; 2022 Jun; 24(22):13897-13904. PubMed ID: 35621115
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Palladium (III) Fluoride Bulk and PdF
    Chen Z; Li T; Yang T; Xu H; Khenata R; Gao Y; Wang X
    Nanomaterials (Basel); 2019 Sep; 9(9):. PubMed ID: 31546886
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl.
    Ouardi S; Fecher GH; Felser C; Kübler J
    Phys Rev Lett; 2013 Mar; 110(10):100401. PubMed ID: 23521232
    [TBL] [Abstract][Full Text] [Related]  

  • 12. n-Channel semiconductor materials design for organic complementary circuits.
    Usta H; Facchetti A; Marks TJ
    Acc Chem Res; 2011 Jul; 44(7):501-10. PubMed ID: 21615105
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Bipolar magnetic semiconductors: a new class of spintronics materials.
    Li X; Wu X; Li Z; Yang J; Hou JG
    Nanoscale; 2012 Sep; 4(18):5680-5. PubMed ID: 22874973
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Highly spin-polarized electronic structure and magnetic properties of Mn
    Wang Y; Wang L; Mi W
    RSC Adv; 2020 Jun; 10(38):22556-22569. PubMed ID: 35514575
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Focusing of spin polarization in semiconductors by inhomogeneous doping.
    Pershin YV; Privman V
    Phys Rev Lett; 2003 Jun; 90(25 Pt 1):256602. PubMed ID: 12857152
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Robust Spin-Gapless Behavior in the Newly Discovered Half Heusler Compound MnPK.
    You J; Cao J; Khenata R; Wang X; Shen X; Yang T
    Materials (Basel); 2019 Sep; 12(19):. PubMed ID: 31557814
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Dissipationless quantum spin current at room temperature.
    Murakami S; Nagaosa N; Zhang SC
    Science; 2003 Sep; 301(5638):1348-51. PubMed ID: 12907808
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Current-induced spin polarization in strained semiconductors.
    Kato YK; Myers RC; Gossard AC; Awschalom DD
    Phys Rev Lett; 2004 Oct; 93(17):176601. PubMed ID: 15525098
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Chemically functionalized germanene for spintronic devices: a first-principles study.
    Zhao J; Zeng H
    Phys Chem Chem Phys; 2016 Apr; 18(14):9809-15. PubMed ID: 27000744
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures.
    Rodrigues SC; Sipahi GM; Scolfaro LM; da Silva EF
    Nanotechnology; 2010 Sep; 21(37):375401. PubMed ID: 20720296
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.