323 related articles for article (PubMed ID: 18542303)
1. Variable-load quenching circuit for single-photon avalanche diodes.
Tisa S; Guerrieri F; Zappa F
Opt Express; 2008 Feb; 16(3):2232-44. PubMed ID: 18542303
[TBL] [Abstract][Full Text] [Related]
2. Operation of silicon single photon avalanche diodes at cryogenic temperature.
Rech I; Labanca I; Armellini G; Gulinatti A; Ghioni M; Cova S
Rev Sci Instrum; 2007 Jun; 78(6):063105. PubMed ID: 17614603
[TBL] [Abstract][Full Text] [Related]
3. A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology.
Mandai S; Fishburn MW; Maruyama Y; Charbon E
Opt Express; 2012 Mar; 20(6):5849-57. PubMed ID: 22418462
[TBL] [Abstract][Full Text] [Related]
4. Self-suppression of reset induced triggering in picosecond SPAD timing circuits.
Rech I; Resnati D; Gulinatti A; Ghioni M; Cova S
Rev Sci Instrum; 2007 Aug; 78(8):086112. PubMed ID: 17764372
[TBL] [Abstract][Full Text] [Related]
5. Integrated array of 2-μm antimonide-based single-photon counting devices.
Diagne MA; Greszik M; Duerr EK; Zayhowski JJ; Manfra MJ; Bailey RJ; Donnelly JP; Turner GW
Opt Express; 2011 Feb; 19(5):4210-6. PubMed ID: 21369250
[TBL] [Abstract][Full Text] [Related]
6. Custom single-photon avalanche diode with integrated front-end for parallel photon timing applications.
Cammi C; Panzeri F; Gulinatti A; Rech I; Ghioni M
Rev Sci Instrum; 2012 Mar; 83(3):033104. PubMed ID: 22462903
[TBL] [Abstract][Full Text] [Related]
7. Monolithic active quenching and picosecond timing circuit suitable for large-area single-photon avalanche diodes.
Gallivanoni A; Rech I; Resnati D; Ghioni M; Cova S
Opt Express; 2006 Jun; 14(12):5021-30. PubMed ID: 19516662
[TBL] [Abstract][Full Text] [Related]
8. An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique.
Dolatpoor Lakeh M; Kammerer JB; Aguénounon E; Issartel D; Schell JB; Rink S; Cathelin A; Calmon F; Uhring W
Sensors (Basel); 2021 Jun; 21(12):. PubMed ID: 34200801
[TBL] [Abstract][Full Text] [Related]
9. High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s.
Acconcia G; Rech I; Gulinatti A; Ghioni M
Opt Express; 2016 Aug; 24(16):17819-31. PubMed ID: 27505749
[TBL] [Abstract][Full Text] [Related]
10. Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes.
Goll B; Steindl B; Zimmermann H
Micromachines (Basel); 2020 Sep; 11(9):. PubMed ID: 32961756
[TBL] [Abstract][Full Text] [Related]
11. 4 ns dead time with a fully integrated active quenching circuit driving a custom single photon avalanche diode.
Giudici A; Acconcia G; Labanca I; Ghioni M; Rech I
Rev Sci Instrum; 2022 Apr; 93(4):043103. PubMed ID: 35489934
[TBL] [Abstract][Full Text] [Related]
12. Performance trade-offs in single-photon avalanche diode miniaturization.
Finkelstein H; Hsu MJ; Zlatanovic S; Esener S
Rev Sci Instrum; 2007 Oct; 78(10):103103. PubMed ID: 17979402
[TBL] [Abstract][Full Text] [Related]
13. Optical crosstalk in single photon avalanche diode arrays: a new complete model.
Rech I; Ingargiola A; Spinelli R; Labanca I; Marangoni S; Ghioni M; Cova S
Opt Express; 2008 Jun; 16(12):8381-94. PubMed ID: 18545552
[TBL] [Abstract][Full Text] [Related]
14. Probing higher order correlations of the photon field with photon number resolving avalanche photodiodes.
Dynes JF; Yuan ZL; Sharpe AW; Thomas O; Shields AJ
Opt Express; 2011 Jul; 19(14):13268-76. PubMed ID: 21747481
[TBL] [Abstract][Full Text] [Related]
15. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science.
Jungmann-Smith JH; Bergamaschi A; Brückner M; Cartier S; Dinapoli R; Greiffenberg D; Jaggi A; Maliakal D; Mayilyan D; Medjoubi K; Mezza D; Mozzanica A; Ramilli M; Ruder Ch; Schädler L; Schmitt B; Shi X; Tinti G
Rev Sci Instrum; 2015 Dec; 86(12):123110. PubMed ID: 26724009
[TBL] [Abstract][Full Text] [Related]
16. Counting near-infrared single-photons with 95% efficiency.
Lita AE; Miller AJ; Nam SW
Opt Express; 2008 Mar; 16(5):3032-40. PubMed ID: 18542389
[TBL] [Abstract][Full Text] [Related]
17. Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor.
Inoue A; Okino T; Koyama S; Hirose Y
Sensors (Basel); 2020 May; 20(10):. PubMed ID: 32466348
[TBL] [Abstract][Full Text] [Related]
18. Scintillation induced response in passively-quenched Si-based single photon counting avalanche diode arrays.
Spanoudaki VCh; Levin CS
Opt Express; 2011 Jan; 19(2):1665-79. PubMed ID: 21263706
[TBL] [Abstract][Full Text] [Related]
19. Fast fully-integrated front-end circuit to overcome pile-up limits in time-correlated single photon counting with single photon avalanche diodes.
Acconcia G; Cominelli A; Ghioni M; Rech I
Opt Express; 2018 Jun; 26(12):15398-15410. PubMed ID: 30114802
[TBL] [Abstract][Full Text] [Related]
20. Multi-Channel Gating Chip in 0.18 µm High-Voltage CMOS for Quantum Applications.
Ribisch C; Hofbauer M; Kohneh Poushi SS; Zimmer A; Schneider-Hornstein K; Goll B; Zimmermann H
Sensors (Basel); 2023 Dec; 23(24):. PubMed ID: 38139490
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
