117 related articles for article (PubMed ID: 18572710)
1. Stress and crystallization of plasma enhanced chemical vapour deposition nanocrystalline silicon films.
Milne SB; Fu YQ; Luo JK; Flewitt AJ; Pisana S; Fasoli A; Milne WI
J Nanosci Nanotechnol; 2008 May; 8(5):2693-8. PubMed ID: 18572710
[TBL] [Abstract][Full Text] [Related]
2. Unravelling a simple method for the low temperature synthesis of silicon nanocrystals and monolithic nanocrystalline thin films.
Kim KH; Johnson EV; Kazanskii AG; Khenkin MV; Roca I Cabarrocas P
Sci Rep; 2017 Jan; 7():40553. PubMed ID: 28091562
[TBL] [Abstract][Full Text] [Related]
3. Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.
Teixeira V; Soares P; Martins AJ; Carneiro J; Cerqueira F
J Nanosci Nanotechnol; 2009 Jul; 9(7):4061-6. PubMed ID: 19916409
[TBL] [Abstract][Full Text] [Related]
4. Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications.
Jeong C; Boo S; Jeon M; Kamisako K
J Nanosci Nanotechnol; 2007 Nov; 7(11):4169-73. PubMed ID: 18047144
[TBL] [Abstract][Full Text] [Related]
5. From amorphous to nanocrystalline: the effect of nanograins in an amorphous matrix on the thermal conductivity of hot-wire chemical-vapor deposited silicon films.
Kearney BT; Jugdersuren B; Queen DR; Metcalf TH; Culbertson JC; Desario PA; Stroud RM; Nemeth W; Wang Q; Liu X
J Phys Condens Matter; 2018 Feb; 30(8):085301. PubMed ID: 29283107
[TBL] [Abstract][Full Text] [Related]
6. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.
Chung YB; Park HK; Lee SH; Song JH; Hwang NM
J Nanosci Nanotechnol; 2011 Sep; 11(9):8242-5. PubMed ID: 22097562
[TBL] [Abstract][Full Text] [Related]
7. Evolution of nc-Si network and the control of its growth by He/H2 plasma assistance in SiH4 at PECVD.
Das D; Raha D; Bhattacharya K
J Nanosci Nanotechnol; 2009 Sep; 9(9):5614-21. PubMed ID: 19928275
[TBL] [Abstract][Full Text] [Related]
8. Effect of multi-polar magnetic field on the properties of nanocrystalline silicon thin film deposited by internal-type inductively coupled plasma.
Kim HB; Lee HC; Kim KN; Kang SK; Yeom GY
J Nanosci Nanotechnol; 2009 Dec; 9(12):7440-5. PubMed ID: 19908805
[TBL] [Abstract][Full Text] [Related]
9. Growth characteristics of nanocrystalline silicon films fabricated by using chlorinated precursors at low temperatures.
Huang R; Ding H; Song J; Guo Y; Wang X; Lin X
J Nanosci Nanotechnol; 2010 Nov; 10(11):7596-9. PubMed ID: 21137990
[TBL] [Abstract][Full Text] [Related]
10. Role of trimethylboron to silane ratio on the properties of p-type nanocrystalline silicon thin film deposited by radio frequency plasma enhanced chemical vapour deposition.
Aguas H; Filonovich SA; Bernacka-Wojcik I; Fortunato E; Martins R
J Nanosci Nanotechnol; 2010 Apr; 10(4):2547-51. PubMed ID: 20355460
[TBL] [Abstract][Full Text] [Related]
11. Investigation of structural disorder using electron temperature in VHF-PECVD on hydrogenated amorphous silicon films for thin film solar cell applications.
Shin C; Park J; Kim S; Jang J; Jung J; Lee YJ; Yi J
J Nanosci Nanotechnol; 2014 Oct; 14(10):8110-6. PubMed ID: 25942934
[TBL] [Abstract][Full Text] [Related]
12. High pressure growth of nanocrystalline silicon films.
Kumar S; Gope J; Kumar A; Parashar A; Rauthan CM; Dixit PN
J Nanosci Nanotechnol; 2008 Aug; 8(8):4211-7. PubMed ID: 19049205
[TBL] [Abstract][Full Text] [Related]
13. Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH
Filonovich SA; Águas H; Busani T; Vicente A; Araújo A; Gaspar D; Vilarigues M; Leitão J; Fortunato E; Martins R
Sci Technol Adv Mater; 2012 Aug; 13(4):045004. PubMed ID: 27877504
[TBL] [Abstract][Full Text] [Related]
14. Photoluminescence of silicon nanocrystals embedded in silicon oxide.
Wong CK; Wong H; Filip V
J Nanosci Nanotechnol; 2009 Feb; 9(2):1272-6. PubMed ID: 19441504
[TBL] [Abstract][Full Text] [Related]
15. Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method.
Waman VS; Kamble MM; Ghosh SS; Mayabadi A; Sathe VG; Amalnekar DP; Pathan HM; Jadkar SR
J Nanosci Nanotechnol; 2012 Nov; 12(11):8459-66. PubMed ID: 23421231
[TBL] [Abstract][Full Text] [Related]
16. Structural evolution of nanocrystalline silicon thin films synthesized in high-density, low-temperature reactive plasmas.
Cheng Q; Xu S; Ostrikov KK
Nanotechnology; 2009 May; 20(21):215606. PubMed ID: 19423937
[TBL] [Abstract][Full Text] [Related]
17. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.
Wang F; Zhang X; Wang L; Jiang Y; Wei C; Xu S; Zhao Y
Phys Chem Chem Phys; 2014 Oct; 16(37):20202-8. PubMed ID: 25138166
[TBL] [Abstract][Full Text] [Related]
18. Electrical and Optical Properties of Si-Incorporated a-C:H Films via the Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Method.
Kim IJ; Choi WS; Hong B
J Nanosci Nanotechnol; 2016 May; 16(5):5394-7. PubMed ID: 27483937
[TBL] [Abstract][Full Text] [Related]
19. Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH
Kim KS; Ji YJ; Kim KH; Kang JE; Ellingboe AR; Yeom GY
Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208298
[TBL] [Abstract][Full Text] [Related]
20. Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.
Park S; Parida B; Kim K
J Nanosci Nanotechnol; 2013 May; 13(5):3397-402. PubMed ID: 23858866
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
