These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

157 related articles for article (PubMed ID: 18643190)

  • 21. Hybrid gate dielectric materials for unconventional electronic circuitry.
    Ha YG; Everaerts K; Hersam MC; Marks TJ
    Acc Chem Res; 2014 Apr; 47(4):1019-28. PubMed ID: 24428627
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Stability and segregation of B and P dopants in Si/SiO2 core-shell nanowires.
    Kim S; Park JS; Chang KJ
    Nano Lett; 2012 Oct; 12(10):5068-73. PubMed ID: 22985080
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes.
    Alivov Y; Funke H; Nagpal P
    Nanotechnology; 2015 Jul; 26(29):295203. PubMed ID: 26134618
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Control of Schottky barrier heights on high-K gate dielectrics for future complementary metal-oxide semiconductor devices.
    Tse KY; Robertson J
    Phys Rev Lett; 2007 Aug; 99(8):086805. PubMed ID: 17930973
    [TBL] [Abstract][Full Text] [Related]  

  • 25. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F; Pham DV; Anselmann R; Bock C; Kunze U
    ACS Appl Mater Interfaces; 2015 Jul; 7(25):14011-7. PubMed ID: 26039187
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Characterization and simulation of electrolyte-gated organic field-effect transistors.
    Melzer K; Brändlein M; Popescu B; Popescu D; Lugli P; Scarpa G
    Faraday Discuss; 2014; 174():399-411. PubMed ID: 25325799
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Proceedings of the Second Workshop on Theory meets Industry (Erwin-Schrödinger-Institute (ESI), Vienna, Austria, 12-14 June 2007).
    Hafner J
    J Phys Condens Matter; 2008 Feb; 20(6):060301. PubMed ID: 21693862
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Effect of interfacial structure on the transistor properties: probing the role of surface modification of gate dielectrics with self-assembled monolayer using organic single-crystal field-effect transistors.
    Islam MM; Pola S; Tao YT
    ACS Appl Mater Interfaces; 2011 Jun; 3(6):2136-41. PubMed ID: 21539400
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Density functional studies on wurtzite piezotronic transistors: influence of different semiconductors and metals on piezoelectric charge distribution and Schottky barrier.
    Liu W; Zhang A; Zhang Y; Wang ZL
    Nanotechnology; 2016 May; 27(20):205204. PubMed ID: 27053577
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
    Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK
    ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585
    [TBL] [Abstract][Full Text] [Related]  

  • 31. A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope.
    Lee JH; Kim BS; Choi SH; Jang Y; Hwang SW; Whang D
    Nanoscale; 2013 Oct; 5(19):8968-72. PubMed ID: 23969942
    [TBL] [Abstract][Full Text] [Related]  

  • 32. First-principles study of the electronic structures and dielectric properties of the Si/SiO(2) interface.
    Ono T; Egami Y; Kutsuki K; Watanabe H; Hirose K
    J Phys Condens Matter; 2007 Sep; 19(36):365202. PubMed ID: 21694148
    [TBL] [Abstract][Full Text] [Related]  

  • 33. A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates.
    Khang DY; Jiang H; Huang Y; Rogers JA
    Science; 2006 Jan; 311(5758):208-12. PubMed ID: 16357225
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs).
    Parikh P; Senowitz C; Lyons D; Martin I; Prosa TJ; DiBattista M; Devaraj A; Meng YS
    Microsc Microanal; 2017 Oct; 23(5):916-925. PubMed ID: 28854989
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.
    Kent T; Chagarov E; Edmonds M; Droopad R; Kummel AC
    ACS Nano; 2015 May; 9(5):4843-9. PubMed ID: 25844578
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Coupling length scales for multiscale atomistics-continuum simulations: atomistically induced stress distributions in Si/Si3N4 nanopixels.
    Lidorikis E; Bachlechner ME; Kalia RK; Nakano A; Vashishta P; Voyiadjis GZ
    Phys Rev Lett; 2001 Aug; 87(8):086104. PubMed ID: 11497965
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.
    Chakraborty G; Sarkar CK; Lu XB; Dai JY
    Nanotechnology; 2008 Jun; 19(25):255401. PubMed ID: 21828650
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Ge/Si nanowire heterostructures as high-performance field-effect transistors.
    Xiang J; Lu W; Hu Y; Wu Y; Yan H; Lieber CM
    Nature; 2006 May; 441(7092):489-93. PubMed ID: 16724062
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Multiphase flow of immiscible fluids on unstructured moving meshes.
    Misztal MK; Erleben K; Bargteil A; Fursund J; Christensen BB; Bærentzen JA; Bridson R
    IEEE Trans Vis Comput Graph; 2014 Jan; 20(1):4-16. PubMed ID: 24201322
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.
    Jung BJ; Martinez Hardigree JF; Dhar BM; Dawidczyk TJ; Sun J; See KC; Katz HE
    ACS Nano; 2011 Apr; 5(4):2723-34. PubMed ID: 21351783
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 8.