1009 related articles for article (PubMed ID: 18654386)
1. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.
Hu Y; Churchill HO; Reilly DJ; Xiang J; Lieber CM; Marcus CM
Nat Nanotechnol; 2007 Oct; 2(10):622-5. PubMed ID: 18654386
[TBL] [Abstract][Full Text] [Related]
2. Quantum devices: Nanowires charge towards integration.
Eriksson MA; Friesen M
Nat Nanotechnol; 2007 Oct; 2(10):595-6. PubMed ID: 18654378
[No Abstract] [Full Text] [Related]
3. Ge/Si nanowire mesoscopic Josephson junctions.
Xiang J; Vidan A; Tinkham M; Westervelt RM; Lieber CM
Nat Nanotechnol; 2006 Dec; 1(3):208-13. PubMed ID: 18654188
[TBL] [Abstract][Full Text] [Related]
4. Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.
Nassiopoulou AG; Olzierski A; Tsoi E; Berbezier I; Karmous A
J Nanosci Nanotechnol; 2007 Jan; 7(1):316-21. PubMed ID: 17455497
[TBL] [Abstract][Full Text] [Related]
5. Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes.
Hu J; Jiang Y; Meng X; Lee CS; Lee ST
Small; 2005 Apr; 1(4):429-38. PubMed ID: 17193468
[TBL] [Abstract][Full Text] [Related]
6. Epitaxial growth of silicon nanowires using an aluminium catalyst.
Wang Y; Schmidt V; Senz S; Gösele U
Nat Nanotechnol; 2006 Dec; 1(3):186-9. PubMed ID: 18654184
[TBL] [Abstract][Full Text] [Related]
7. Linker-free directed assembly of high-performance integrated devices based on nanotubes and nanowires.
Lee M; Im J; Lee BY; Myung S; Kang J; Huang L; Kwon YK; Hong S
Nat Nanotechnol; 2006 Oct; 1(1):66-71. PubMed ID: 18654144
[TBL] [Abstract][Full Text] [Related]
8. Ge/Si nanowire heterostructures as high-performance field-effect transistors.
Xiang J; Lu W; Hu Y; Wu Y; Yan H; Lieber CM
Nature; 2006 May; 441(7092):489-93. PubMed ID: 16724062
[TBL] [Abstract][Full Text] [Related]
9. Spin qubits with electrically gated polyoxometalate molecules.
Lehmann J; Gaita-Arino A; Coronado E; Loss D
Nat Nanotechnol; 2007 May; 2(5):312-7. PubMed ID: 18654290
[TBL] [Abstract][Full Text] [Related]
10. Optical pumping of a single hole spin in a quantum dot.
Gerardot BD; Brunner D; Dalgarno PA; Ohberg P; Seidl S; Kroner M; Karrai K; Stoltz NG; Petroff PM; Warburton RJ
Nature; 2008 Jan; 451(7177):441-4. PubMed ID: 18216849
[TBL] [Abstract][Full Text] [Related]
11. Electron-conducting quantum dot solids: novel materials based on colloidal semiconductor nanocrystals.
Vanmaekelbergh D; Liljeroth P
Chem Soc Rev; 2005 Apr; 34(4):299-312. PubMed ID: 15778764
[TBL] [Abstract][Full Text] [Related]
12. Synergetic nanowire growth.
Borgström MT; Immink G; Ketelaars B; Algra R; Bakkers EP
Nat Nanotechnol; 2007 Sep; 2(9):541-4. PubMed ID: 18654364
[TBL] [Abstract][Full Text] [Related]
13. Extended defect states of Ge/Si quantum dots using optical isothermal capacitance transient spectroscopy.
Kwak DW; Park CJ; Lee YH; Kim WS; Cho HY
Nanotechnology; 2009 Feb; 20(5):055201. PubMed ID: 19417338
[TBL] [Abstract][Full Text] [Related]
14. Formation of compositionally abrupt axial heterojunctions in silicon-germanium nanowires.
Wen CY; Reuter MC; Bruley J; Tersoff J; Kodambaka S; Stach EA; Ross FM
Science; 2009 Nov; 326(5957):1247-50. PubMed ID: 19965471
[TBL] [Abstract][Full Text] [Related]
15. A simple route to growth of silicon nanowires.
Pan H; Ni Z; Poh C; Feng YP; Lin J; Shen Z
J Nanosci Nanotechnol; 2008 Nov; 8(11):5787-90. PubMed ID: 19198306
[TBL] [Abstract][Full Text] [Related]
16. Device physics: super-semiconducting nanowires.
Belzig W
Nat Nanotechnol; 2006 Dec; 1(3):167-8. PubMed ID: 18654178
[No Abstract] [Full Text] [Related]
17. Self-aligned charge read-out for InAs nanowire quantum dots.
Shorubalko I; Leturcq R; Pfund A; Tyndall D; Krischek R; Schön S; Ensslin K
Nano Lett; 2008 Feb; 8(2):382-5. PubMed ID: 18197718
[TBL] [Abstract][Full Text] [Related]
18. Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells.
Claussen SA; Tasyurek E; Roth JE; Miller DA
Opt Express; 2010 Dec; 18(25):25596-607. PubMed ID: 21164905
[TBL] [Abstract][Full Text] [Related]
19. Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot.
Simmons CB; Thalakulam M; Rosemeyer BM; Van Bael BJ; Sackmann EK; Savage DE; Lagally MG; Joynt R; Friesen M; Coppersmith SN; Eriksson MA
Nano Lett; 2009 Sep; 9(9):3234-8. PubMed ID: 19645459
[TBL] [Abstract][Full Text] [Related]
20. Building a spin quantum bit register using semiconductor nanowires.
Baugh J; Fung JS; Mracek J; LaPierre RR
Nanotechnology; 2010 Apr; 21(13):134018. PubMed ID: 20208115
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
