These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

148 related articles for article (PubMed ID: 18954130)

  • 1. Interface charge induced p-type characteristics of aligned Si(1-x)Gex nanowires.
    Seong HK; Jeon EK; Kim MH; Oh H; Lee JO; Kim JJ; Choi HJ
    Nano Lett; 2008 Nov; 8(11):3656-61. PubMed ID: 18954130
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.
    Periwal P; Sibirev NV; Patriarche G; Salem B; Bassani F; Dubrovskii VG; Baron T
    Nano Lett; 2014 Sep; 14(9):5140-7. PubMed ID: 25118977
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Vertical nanowire heterojunction devices based on a clean Si/Ge interface.
    Chen L; Fung WY; Lu W
    Nano Lett; 2013; 13(11):5521-7. PubMed ID: 24134685
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Resolving microscopic interfaces in Si(1-x)Ge(x) alloy nanowire devices.
    Jeon EK; Seo H; Ahn CW; Seong H; Choi HJ; Kim JJ; Kong KJ; Buh G; Chang H; Lee JO
    Nanotechnology; 2009 Mar; 20(11):115708. PubMed ID: 19420456
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Lateral Ge Diffusion During Oxidation of Si/SiGe Fins.
    Brewer WM; Xin Y; Hatem C; Diercks D; Truong VQ; Jones KS
    Nano Lett; 2017 Apr; 17(4):2159-2164. PubMed ID: 28249115
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on Si
    Wen F; Tutuc E
    Nano Lett; 2018 Jan; 18(1):94-100. PubMed ID: 29185763
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Fabrication of Coaxial Si(1-x)Ge(x) Heterostructure Nanowires by O(2) Flow-Induced Bifurcate Reactions.
    Kim I; Lee KY; Kim U; Park YH; Park TE; Choi HJ
    Nanoscale Res Lett; 2010 Jun; 5(10):1535-1539. PubMed ID: 21076699
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Highly Transparent Contacts to the 1D Hole Gas in Ultrascaled Ge/Si Core/Shell Nanowires.
    Sistani M; Delaforce J; Kramer RBG; Roch N; Luong MA; den Hertog MI; Robin E; Smoliner J; Yao J; Lieber CM; Naud C; Lugstein A; Buisson O
    ACS Nano; 2019 Dec; 13(12):14145-14151. PubMed ID: 31816231
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Interfacial, Electrical, and Band Alignment Characteristics of HfO
    Cao YQ; Wu B; Wu D; Li AD
    Nanoscale Res Lett; 2017 Dec; 12(1):370. PubMed ID: 28549375
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Growth of heterojunctions in Si-Ge alloy nanowires by altering AuGeSi eutectic composition using an approach based on thermal oxidation.
    Sun YT; Lee HY; Wang IT; Wen CY
    Nanotechnology; 2019 Jul; 30(28):284002. PubMed ID: 30913543
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Structural Properties of Al-O Monolayers in SiO
    Hiller D; Göttlicher J; Steininger R; Huthwelker T; Julin J; Munnik F; Wahl M; Bock W; Schoenaers B; Stesmans A; König D
    ACS Appl Mater Interfaces; 2018 Sep; 10(36):30495-30505. PubMed ID: 30110151
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Producing Atomically Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires by Thermal Oxidation.
    Lee HY; Shen TH; Hu CY; Tsai YY; Wen CY
    Nano Lett; 2017 Dec; 17(12):7494-7499. PubMed ID: 29185770
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.
    Lin YC; Lu KC; Wu WW; Bai J; Chen LJ; Tu KN; Huang Y
    Nano Lett; 2008 Mar; 8(3):913-8. PubMed ID: 18266331
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Controlling heterojunction abruptness in VLS-grown semiconductor nanowires via in situ catalyst alloying.
    Perea DE; Li N; Dickerson RM; Misra A; Picraux ST
    Nano Lett; 2011 Aug; 11(8):3117-22. PubMed ID: 21696182
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.
    Chen L; Cai F; Otuonye U; Lu WD
    Nano Lett; 2016 Jan; 16(1):420-6. PubMed ID: 26674542
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors.
    Simanullang MDK; Wisna GBM; Usami K; Oda S
    Nanoscale Adv; 2020 Apr; 2(4):1465-1472. PubMed ID: 36132315
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Atomically controlled processing in silicon-based CVD epitaxial growth.
    Murota J; Sakuraba M; Tillack B
    J Nanosci Nanotechnol; 2011 Sep; 11(9):8348-53. PubMed ID: 22097582
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells.
    Zhao Y; Smith JT; Appenzeller J; Yang C
    Nano Lett; 2011 Apr; 11(4):1406-11. PubMed ID: 21417251
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Fabrication and Characterization of Field Effect Transistor Based on High-Aspect Ratio Sulfur-Doped ZnO Nanowires.
    Kim SH; Umar A; Al-Hajry A; Dar GN; Abaker M; Hwang SW
    J Nanosci Nanotechnol; 2015 May; 15(5):3956-61. PubMed ID: 26505031
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Surface dangling-bond States and band lineups in hydrogen-terminated Si, Ge, and Ge/si nanowires.
    Kagimura R; Nunes RW; Chacham H
    Phys Rev Lett; 2007 Jan; 98(2):026801. PubMed ID: 17358629
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.