118 related articles for article (PubMed ID: 19076030)
1. P-wave-enhanced spin field effect transistor and recent patents.
Gau MH; Lo I; Wang WT; Chiang JC; Chou MM
Recent Pat Nanotechnol; 2007; 1(3):169-75. PubMed ID: 19076030
[TBL] [Abstract][Full Text] [Related]
2. Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors.
Im KS; Reddy MSP; Choi J; Hwang Y; Roh JS; An SJ; Lee JH
J Nanosci Nanotechnol; 2020 Jul; 20(7):4282-4286. PubMed ID: 31968458
[TBL] [Abstract][Full Text] [Related]
3. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer.
Weng YC; Lin YC; Hsu HT; Kao ML; Huang HY; Ueda D; Ha MT; Yang CY; Maa JS; Chang EY; Dee CF
Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160649
[TBL] [Abstract][Full Text] [Related]
4. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.
Fisichella G; Greco G; Roccaforte F; Giannazzo F
Nanoscale; 2014 Aug; 6(15):8671-80. PubMed ID: 24946753
[TBL] [Abstract][Full Text] [Related]
5. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating.
Liu X; Lu Y; Yu W; Wu J; He J; Tang D; Liu Z; Somasuntharam P; Zhu D; Liu W; Cao P; Han S; Chen S; Tan LS
Sci Rep; 2015 Sep; 5():14092. PubMed ID: 26364872
[TBL] [Abstract][Full Text] [Related]
6. Control of spin precession in a spin-injected field effect transistor.
Koo HC; Kwon JH; Eom J; Chang J; Han SH; Johnson M
Science; 2009 Sep; 325(5947):1515-8. PubMed ID: 19762637
[TBL] [Abstract][Full Text] [Related]
7. The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?
Mao LF; Ning HS; Wang JY
PLoS One; 2015; 10(6):e0128438. PubMed ID: 26039589
[TBL] [Abstract][Full Text] [Related]
8. AlGaN/GaN heterostructures for non-invasive cell electrophysiological measurements.
Yu J; Jha SK; Xiao L; Liu Q; Wang P; Surya C; Yang M
Biosens Bioelectron; 2007 Nov; 23(4):513-9. PubMed ID: 17766103
[TBL] [Abstract][Full Text] [Related]
9. All-electric all-semiconductor spin field-effect transistors.
Chuang P; Ho SC; Smith LW; Sfigakis F; Pepper M; Chen CH; Fan JC; Griffiths JP; Farrer I; Beere HE; Jones GA; Ritchie DA; Chen TM
Nat Nanotechnol; 2015 Jan; 10(1):35-9. PubMed ID: 25531088
[TBL] [Abstract][Full Text] [Related]
10. Power dissipation in spintronic devices: a general perspective.
Bandyopadhyay S
J Nanosci Nanotechnol; 2007 Jan; 7(1):168-80. PubMed ID: 17455482
[TBL] [Abstract][Full Text] [Related]
11. Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect.
Choi WY; Kim HJ; Chang J; Han SH; Koo HC; Johnson M
Nat Nanotechnol; 2015 Aug; 10(8):666-70. PubMed ID: 26005997
[TBL] [Abstract][Full Text] [Related]
12. Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime.
Kumar A; Capua E; Fontanesi C; Carmieli R; Naaman R
ACS Nano; 2018 Apr; 12(4):3892-3897. PubMed ID: 29617105
[TBL] [Abstract][Full Text] [Related]
13. Ca
Asadnia M; Myers M; Umana-Membreno GA; Sanders TM; Mishra UK; Nener BD; Baker MV; Parish G
Anal Chim Acta; 2017 Sep; 987():105-110. PubMed ID: 28916033
[TBL] [Abstract][Full Text] [Related]
14. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.
Lee HH; Bae M; Jo SH; Shin JK; Son DH; Won CH; Jeong HM; Lee JH; Kang SW
Sensors (Basel); 2015 Jul; 15(8):18416-26. PubMed ID: 26225981
[TBL] [Abstract][Full Text] [Related]
15. Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures.
Alifragis Y; Volosirakis A; Chaniotakis NA; Konstantinidis G; Adikimenakis A; Georgakilas A
Biosens Bioelectron; 2007 Jun; 22(12):2796-801. PubMed ID: 17098415
[TBL] [Abstract][Full Text] [Related]
16. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
[TBL] [Abstract][Full Text] [Related]
17. High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
Dong Y; Son DH; Dai Q; Lee JH; Won CH; Kim JG; Chen D; Lee JH; Lu H; Zhang R; Zheng Y
Sensors (Basel); 2018 Apr; 18(5):. PubMed ID: 29695112
[TBL] [Abstract][Full Text] [Related]
18. High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect Transistor.
Choi JH; Vuong TA; Kim H; Cha HY
J Nanosci Nanotechnol; 2020 Jul; 20(7):4404-4408. PubMed ID: 31968484
[TBL] [Abstract][Full Text] [Related]
19. Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor.
Wang F; Liu H; Xu Y; Liang Z; Wu Z; Liu Y; Zhang B
Micromachines (Basel); 2023 Jun; 14(6):. PubMed ID: 37374771
[TBL] [Abstract][Full Text] [Related]
20. High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage.
Zhang Y; Li Y; Wang J; Shen Y; Du L; Li Y; Wang Z; Xu S; Zhang J; Hao Y
Nanoscale Res Lett; 2020 May; 15(1):114. PubMed ID: 32436019
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]