These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
154 related articles for article (PubMed ID: 19113891)
1. Programmable resistance switching in nanoscale two-terminal devices. Jo SH; Kim KH; Lu W Nano Lett; 2009 Jan; 9(1):496-500. PubMed ID: 19113891 [TBL] [Abstract][Full Text] [Related]
2. CMOS compatible nanoscale nonvolatile resistance switching memory. Jo SH; Lu W Nano Lett; 2008 Feb; 8(2):392-7. PubMed ID: 18217785 [TBL] [Abstract][Full Text] [Related]
3. From stochastic single atomic switch to nanoscale resistive memory device. Geresdi A; Halbritter A; Gyenis A; Makk P; Mihály G Nanoscale; 2011 Apr; 3(4):1504-7. PubMed ID: 21409261 [TBL] [Abstract][Full Text] [Related]
4. Memristor-based programmable logic array (PLA) and analysis as Memristive networks. Lee KH; Lee SJ; Kim SM; Cho K J Nanosci Nanotechnol; 2013 May; 13(5):3265-9. PubMed ID: 23858841 [TBL] [Abstract][Full Text] [Related]
5. Resistance switching characteristics of HfO2 film with electrode for resistance change random access memory. Park IS; Lee JH; Lee S; Ahn J J Nanosci Nanotechnol; 2007 Nov; 7(11):4139-42. PubMed ID: 18047136 [TBL] [Abstract][Full Text] [Related]
6. Photo-stimulated resistive switching of ZnO nanorods. Park J; Lee S; Yong K Nanotechnology; 2012 Sep; 23(38):385707. PubMed ID: 22948083 [TBL] [Abstract][Full Text] [Related]
7. Resistive switching in nanogap systems on SiO2 substrates. Yao J; Zhong L; Zhang Z; He T; Jin Z; Wheeler PJ; Natelson D; Tour JM Small; 2009 Dec; 5(24):2910-5. PubMed ID: 19787676 [TBL] [Abstract][Full Text] [Related]
8. Light-controlled conductance switching of ordered metal-molecule-metal devices. van der Molen SJ; Liao J; Kudernac T; Agustsson JS; Bernard L; Calame M; van Wees BJ; Feringa BL; Schönenberger C Nano Lett; 2009 Jan; 9(1):76-80. PubMed ID: 19072312 [TBL] [Abstract][Full Text] [Related]
9. Si/a-Si core/shell nanowires as nonvolatile crossbar switches. Dong Y; Yu G; McAlpine MC; Lu W; Lieber CM Nano Lett; 2008 Feb; 8(2):386-91. PubMed ID: 18220442 [TBL] [Abstract][Full Text] [Related]
10. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices. Venugopal G; Kim SJ J Nanosci Nanotechnol; 2012 Nov; 12(11):8522-5. PubMed ID: 23421239 [TBL] [Abstract][Full Text] [Related]
11. Memristor-MOS analog correlator for pattern recognition system. Han CR; Lee SJ; Oh KS; Cho K J Nanosci Nanotechnol; 2013 May; 13(5):3365-70. PubMed ID: 23858860 [TBL] [Abstract][Full Text] [Related]