179 related articles for article (PubMed ID: 19421217)
1. Dopant profiling and surface analysis of silicon nanowires using capacitance-voltage measurements.
Garnett EC; Tseng YC; Khanal DR; Wu J; Bokor J; Yang P
Nat Nanotechnol; 2009 May; 4(5):311-4. PubMed ID: 19421217
[TBL] [Abstract][Full Text] [Related]
2. Measurement of carrier mobility in silicon nanowires.
Gunawan O; Sekaric L; Majumdar A; Rooks M; Appenzeller J; Sleight JW; Guha S; Haensch W
Nano Lett; 2008 Jun; 8(6):1566-71. PubMed ID: 18444687
[TBL] [Abstract][Full Text] [Related]
3. Photocurrent induced by nonradiative energy transfer from nanocrystal quantum dots to adjacent silicon nanowire conducting channels: toward a new solar cell paradigm.
Lu S; Lingley Z; Asano T; Harris D; Barwicz T; Guha S; Madhukar A
Nano Lett; 2009 Dec; 9(12):4548-52. PubMed ID: 19856942
[TBL] [Abstract][Full Text] [Related]
4. Size limits on doping phosphorus into silicon nanocrystals.
Chan TL; Tiago ML; Kaxiras E; Chelikowsky JR
Nano Lett; 2008 Feb; 8(2):596-600. PubMed ID: 18154366
[TBL] [Abstract][Full Text] [Related]
5. Fabrication of nanopores in silicon chips using feedback chemical etching.
Park SR; Peng H; Ling XS
Small; 2007 Jan; 3(1):116-9. PubMed ID: 17294481
[No Abstract] [Full Text] [Related]
6. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
Schmidt V; Riel H; Senz S; Karg S; Riess W; Gösele U
Small; 2006 Jan; 2(1):85-8. PubMed ID: 17193560
[No Abstract] [Full Text] [Related]
7. Selective plating for junction delineation in silicon nanowires.
Eichfeld CM; Wood C; Liu B; Eichfeld SM; Redwing JM; Mohney SE
Nano Lett; 2007 Sep; 7(9):2642-4. PubMed ID: 17696558
[TBL] [Abstract][Full Text] [Related]
8. Surface patterning: Silicon falls into line.
Bent SF
Nat Nanotechnol; 2008 Apr; 3(4):185-6. PubMed ID: 18654496
[No Abstract] [Full Text] [Related]
9. Electrically conductive and optically active porous silicon nanowires.
Qu Y; Liao L; Li Y; Zhang H; Huang Y; Duan X
Nano Lett; 2009 Dec; 9(12):4539-43. PubMed ID: 19807130
[TBL] [Abstract][Full Text] [Related]
10. Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire.
Perea DE; Hemesath ER; Schwalbach EJ; Lensch-Falk JL; Voorhees PW; Lauhon LJ
Nat Nanotechnol; 2009 May; 4(5):315-9. PubMed ID: 19421218
[TBL] [Abstract][Full Text] [Related]
11. High density n-Si/n-TiO2 core/shell nanowire arrays with enhanced photoactivity.
Hwang YJ; Boukai A; Yang P
Nano Lett; 2009 Jan; 9(1):410-5. PubMed ID: 19053790
[TBL] [Abstract][Full Text] [Related]
12. Self-assembling silicon nanowires for device applications using the nanochannel-guided "grow-in-place" approach.
Shan Y; Fonash SJ
ACS Nano; 2008 Mar; 2(3):429-34. PubMed ID: 19206566
[TBL] [Abstract][Full Text] [Related]
13. Fabrication of suspended silicon nanowire arrays.
Lee KN; Jung SW; Shin KS; Kim WH; Lee MH; Seong WK
Small; 2008 May; 4(5):642-8. PubMed ID: 18431721
[TBL] [Abstract][Full Text] [Related]
14. Selective surface functionalization of silicon nanowires via nanoscale joule heating.
Park I; Li Z; Pisano AP; Williams RS
Nano Lett; 2007 Oct; 7(10):3106-11. PubMed ID: 17894518
[TBL] [Abstract][Full Text] [Related]
15. Spreading of liquid AuSi on vapor-liquid-solid-grown Si nanowires.
Madras P; Dailey E; Drucker J
Nano Lett; 2010 May; 10(5):1759-63. PubMed ID: 20387793
[TBL] [Abstract][Full Text] [Related]
16. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth.
Ke Y; Weng X; Redwing JM; Eichfeld CM; Swisher TR; Mohney SE; Habib YM
Nano Lett; 2009 Dec; 9(12):4494-9. PubMed ID: 19904918
[TBL] [Abstract][Full Text] [Related]
17. Ultra-low contact resistance of epitaxially interfaced bridged silicon nanowires.
Chaudhry A; Ramamurthi V; Fong E; Islam MS
Nano Lett; 2007 Jun; 7(6):1536-41. PubMed ID: 17530911
[TBL] [Abstract][Full Text] [Related]
18. High electron mobility InAs nanowire field-effect transistors.
Dayeh SA; Aplin DP; Zhou X; Yu PK; Yu ET; Wang D
Small; 2007 Feb; 3(2):326-32. PubMed ID: 17199246
[TBL] [Abstract][Full Text] [Related]
19. Tunable electrical properties of silicon nanowires via surface-ambient chemistry.
Yuan GD; Zhou YB; Guo CS; Zhang WJ; Tang YB; Li YQ; Chen ZH; He ZB; Zhang XJ; Wang PF; Bello I; Zhang RQ; Lee CS; Lee ST
ACS Nano; 2010 Jun; 4(6):3045-52. PubMed ID: 20565140
[TBL] [Abstract][Full Text] [Related]
20. Three-dimensional sequential self-assembly of microscale objects.
Onoe H; Matsumoto K; Shimoyama I
Small; 2007 Aug; 3(8):1383-9. PubMed ID: 17594683
[No Abstract] [Full Text] [Related]
[Next] [New Search]
