These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

83 related articles for article (PubMed ID: 19441379)

  • 1. Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications.
    Guan W; Long S; Hu Y; Liu Q; Wang Q; Liu M
    J Nanosci Nanotechnol; 2009 Feb; 9(2):723-6. PubMed ID: 19441379
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis.
    Khurana G; Misra P; Kumar N; Kooriyattil S; Scott JF; Katiyar RS
    Nanotechnology; 2016 Jan; 27(1):015702. PubMed ID: 26594840
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt
    Wang LG; Cao ZY; Qian X; Zhu L; Cui DP; Li AD; Wu D
    ACS Appl Mater Interfaces; 2017 Feb; 9(7):6634-6643. PubMed ID: 28139921
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles.
    Sun Y; Wen D; Bai X
    Phys Chem Chem Phys; 2018 Feb; 20(8):5771-5779. PubMed ID: 29411800
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Bipolar resistance switching characteristics in TiN/ZnO:Mn/Pt junctions developed for nonvolatile resistive memory application.
    Yang YC; Fan B; Zeng F; Pan F
    J Nanosci Nanotechnol; 2010 Nov; 10(11):7370-3. PubMed ID: 21137937
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.
    Li Y; Yuan P; Fu L; Li R; Gao X; Tao C
    Nanotechnology; 2015 Oct; 26(39):391001. PubMed ID: 26358828
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.
    Wu D; Jiang Y; Yu Y; Zhang Y; Li G; Zhu Z; Wu C; Wang L; Luo L; Jie J
    Nanotechnology; 2012 Dec; 23(48):485203. PubMed ID: 23138192
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode.
    Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Formation and rupture of Ag conductive bridge in ZrO2-based resistive switching memory.
    Lin CC; Chang YP
    J Nanosci Nanotechnol; 2012 Mar; 12(3):2437-41. PubMed ID: 22755070
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Study on Resistance Switching Properties of Na0.5Bi0.5TiO3Thin Films Using Impedance Spectroscopy.
    Zhang T; Zhang X; Ding L; Zhang W
    Nanoscale Res Lett; 2009 Jul; 4(11):1309-14. PubMed ID: 20628453
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate).
    Zhou Y; Han ST; Xu ZX; Roy VA
    Nanotechnology; 2012 Aug; 23(34):344014. PubMed ID: 22885601
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.
    Venugopal G; Kim SJ
    J Nanosci Nanotechnol; 2012 Nov; 12(11):8522-5. PubMed ID: 23421239
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.
    Hu W; Qin N; Wu G; Lin Y; Li S; Bao D
    J Am Chem Soc; 2012 Sep; 134(36):14658-61. PubMed ID: 22931305
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Nonvolatile organic thin film transistor memory devices based on hybrid nanocomposites of semiconducting polymers: gold nanoparticles.
    Chang HC; Liu CL; Chen WC
    ACS Appl Mater Interfaces; 2013 Dec; 5(24):13180-7. PubMed ID: 24224739
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.
    Acharya SK; Nallagatla RV; Togibasa O; Lee BW; Liu C; Jung CU; Park BH; Park JY; Cho Y; Kim DW; Jo J; Kwon DH; Kim M; Hwang CS; Chae SC
    ACS Appl Mater Interfaces; 2016 Mar; 8(12):7902-11. PubMed ID: 26955744
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Multilevel nonvolatile small-molecule memory cell embedded with Ni nanocrystals surrounded by a NiO tunneling barrier.
    Park JG; Nam WS; Seo SH; Kim YG; Oh YH; Lee GS; Paik UG
    Nano Lett; 2009 Apr; 9(4):1713-9. PubMed ID: 19351198
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.
    Huang YJ; Chao SC; Lien DH; Wen CY; He JH; Lee SC
    Sci Rep; 2016 Apr; 6():23945. PubMed ID: 27052322
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Modulation of surface trap induced resistive switching by electrode annealing in individual PbS micro/nanowire-based devices for resistance random access memory.
    Zheng J; Cheng B; Wu F; Su X; Xiao Y; Guo R; Lei S
    ACS Appl Mater Interfaces; 2014 Dec; 6(23):20812-8. PubMed ID: 25398100
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.
    Oh SI; Rani JR; Hong SM; Jang JH
    Nanoscale; 2017 Oct; 9(40):15314-15322. PubMed ID: 28820212
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Nonvolatile Electric Double-Layer Transistor Memory Devices Embedded with Au Nanoparticles.
    Koo J; Yang J; Cho B; Jo H; Lee KH; Kang MS
    ACS Appl Mater Interfaces; 2018 Mar; 10(11):9563-9570. PubMed ID: 29468869
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.