These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
151 related articles for article (PubMed ID: 19441448)
1. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory. Xiong L; Chen Y; Lee JD J Nanosci Nanotechnol; 2009 Feb; 9(2):1034-7. PubMed ID: 19441448 [TBL] [Abstract][Full Text] [Related]
2. A Multi-Scale Approach for Phase Field Modeling of Ultra-Hard Ceramic Composites. Clayton JD; Guziewski M; Ligda JP; Leavy RB; Knap J Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33799434 [TBL] [Abstract][Full Text] [Related]
3. Electrochemical properties and applications of nanocrystalline, microcrystalline, and epitaxial cubic silicon carbide films. Zhuang H; Yang N; Zhang L; Fuchs R; Jiang X ACS Appl Mater Interfaces; 2015 May; 7(20):10886-95. PubMed ID: 25939808 [TBL] [Abstract][Full Text] [Related]
4. Grain Boundary Sliding and Amorphization are Responsible for the Reverse Hall-Petch Relation in Superhard Nanocrystalline Boron Carbide. Guo D; Song S; Luo R; Goddard WA; Chen M; Reddy KM; An Q Phys Rev Lett; 2018 Oct; 121(14):145504. PubMed ID: 30339450 [TBL] [Abstract][Full Text] [Related]
5. Thermal and Mechanical Properties of Amorphous Silicon Carbide Thin Films Using the Femtosecond Pump-Probe Technique. Kim YY Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329613 [TBL] [Abstract][Full Text] [Related]
6. Atomistic simulation study of tensile deformation in nanocrystalline and single-crystal Au. Wu CD; Tsai HW J Mol Model; 2017 Apr; 23(4):114. PubMed ID: 28289955 [TBL] [Abstract][Full Text] [Related]
7. Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates. Ben Messaoud J; Michaud JF; Certon D; Camarda M; Piluso N; Colin L; Barcella F; Alquier D Micromachines (Basel); 2019 Nov; 10(12):. PubMed ID: 31766525 [TBL] [Abstract][Full Text] [Related]
8. Grain boundary resistance to amorphization of nanocrystalline silicon carbide. Chen D; Gao F; Liu B Sci Rep; 2015 Nov; 5():16602. PubMed ID: 26558694 [TBL] [Abstract][Full Text] [Related]
9. Deposition of boron-doped nanocrystalline silicon carbide thin films using H Liu J; Zhang Y; Fan Z; Sun H; Shan F Nanotechnology; 2020 Apr; 31(27):275705. PubMed ID: 32217826 [TBL] [Abstract][Full Text] [Related]
10. Local boron environment in B-doped nanocrystalline diamond films. Turner S; Lu YG; Janssens SD; Da Pieve F; Lamoen D; Verbeeck J; Haenen K; Wagner P; Van Tendeloo G Nanoscale; 2012 Sep; 4(19):5960-4. PubMed ID: 22903371 [TBL] [Abstract][Full Text] [Related]
11. High-Strength Amorphous Silicon Carbide for Nanomechanics. Xu M; Shin D; Sberna PM; van der Kolk R; Cupertino A; Bessa MA; Norte RA Adv Mater; 2024 Feb; 36(5):e2306513. PubMed ID: 37823403 [TBL] [Abstract][Full Text] [Related]
12. A crossover in the mechanical response of nanocrystalline ceramics. Szlufarska I; Nakano A; Vashishta P Science; 2005 Aug; 309(5736):911-4. PubMed ID: 16081730 [TBL] [Abstract][Full Text] [Related]
13. Creep deformation of grain boundary in a highly crystalline SiC fibre. Shibayama T; Yoshida Y; Yano Y; Takahashi H J Electron Microsc (Tokyo); 2003; 52(1):75-8. PubMed ID: 12741492 [TBL] [Abstract][Full Text] [Related]
14. Energy dispersive spectroscopy analysis of aluminium segregation in silicon carbide grain boundaries. Zhang XF; Yang Q; De Jonghe LC; Zhang Z J Microsc; 2002 Jul; 207(Pt 1):58-68. PubMed ID: 12135460 [TBL] [Abstract][Full Text] [Related]