These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
216 related articles for article (PubMed ID: 19453000)
1. ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles. Yeom D; Kang J; Yoon C; Park B; Jeong DY; Koh EK; Kim S J Nanosci Nanotechnol; 2009 May; 9(5):3256-60. PubMed ID: 19453000 [TBL] [Abstract][Full Text] [Related]
2. ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes. Keem K; Kang J; Yoon C; Yeom D; Jeong DY; Park B; Park J; Kim S J Nanosci Nanotechnol; 2009 Jul; 9(7):4240-3. PubMed ID: 19916437 [TBL] [Abstract][Full Text] [Related]
3. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al(2)O(3) gate oxides. Yeom D; Kang J; Lee M; Jang J; Yun J; Jeong DY; Yoon C; Koo J; Kim S Nanotechnology; 2008 Oct; 19(39):395204. PubMed ID: 21832589 [TBL] [Abstract][Full Text] [Related]
4. Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides. Park B; Cho K; Yun J; Koo YS; Lee JH; Kim S J Nanosci Nanotechnol; 2009 Mar; 9(3):1904-8. PubMed ID: 19435057 [TBL] [Abstract][Full Text] [Related]
5. Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM. Lee YT; Ali Raza SR; Jeon PJ; Ha R; Choi HJ; Im S Nanoscale; 2013 May; 5(10):4181-5. PubMed ID: 23584636 [TBL] [Abstract][Full Text] [Related]
6. Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors. Keem K; Jeong DY; Kim S; Lee MS; Yeo IS; Chung UI; Moon JT Nano Lett; 2006 Jul; 6(7):1454-8. PubMed ID: 16834428 [TBL] [Abstract][Full Text] [Related]
7. NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers. Yeom D; Keem K; Kang J; Jeong DY; Yoon C; Kim D; Kim S Nanotechnology; 2008 Jul; 19(26):265202. PubMed ID: 21828674 [TBL] [Abstract][Full Text] [Related]
8. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics. Yoon A; Hong WK; Lee T J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128 [TBL] [Abstract][Full Text] [Related]
9. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. Ju S; Lee K; Janes DB; Yoon MH; Facchetti A; Marks TJ Nano Lett; 2005 Nov; 5(11):2281-6. PubMed ID: 16277468 [TBL] [Abstract][Full Text] [Related]
10. Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors. Choe M; Park W; Kang JW; Jeong S; Hong WK; Lee BH; Park SJ; Lee T Nanotechnology; 2012 Dec; 23(48):485201. PubMed ID: 23128783 [TBL] [Abstract][Full Text] [Related]
11. Direct-write fabrication of a nanoscale digital logic element on a single nanowire. Roy S; Gao Z Nanotechnology; 2010 Jun; 21(24):245306. PubMed ID: 20498519 [TBL] [Abstract][Full Text] [Related]
12. Single ZnO nanowire based high-performance field effect transistors (FETs). Park YK; Umar A; Kim JS; Yang HY; Lee JS; Hahn YB J Nanosci Nanotechnol; 2009 Oct; 9(10):5839-44. PubMed ID: 19908462 [TBL] [Abstract][Full Text] [Related]
13. High-performance ZnO nanowire transistors with aluminum top-gate electrodes and naturally formed hybrid self-assembled monolayer/AlO(x) gate dielectric. Kälblein D; Ryu H; Ante F; Fenk B; Hahn K; Kern K; Klauk H ACS Nano; 2014 Jul; 8(7):6840-8. PubMed ID: 24940627 [TBL] [Abstract][Full Text] [Related]
14. Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches. Park YK; Umar A; Kim SH; Kim JH; Lee EW; Vaseem M; Hahn YB J Nanosci Nanotechnol; 2008 Nov; 8(11):6010-6. PubMed ID: 19198339 [TBL] [Abstract][Full Text] [Related]
15. Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors. Lan C; Yip S; Kang X; Meng Y; Bu X; Ho JC ACS Appl Mater Interfaces; 2020 Dec; 12(50):56330-56337. PubMed ID: 33287538 [TBL] [Abstract][Full Text] [Related]
16. Control of the threshold voltage in ZnO nanobelt field-effect transistors by using MoO x thin film. Qian H; Fang Y; Gu L; Lu R; Zhao M; Wang W; Wang Y; Sha J Nanotechnology; 2016 Jul; 27(26):265201. PubMed ID: 27196112 [TBL] [Abstract][Full Text] [Related]
17. Low voltage operating field effect transistors with composite In2O3-ZnO-ZnGa2O4 nanofiber network as active channel layer. Choi SH; Jang BH; Park JS; Demadrille R; Tuller HL; Kim ID ACS Nano; 2014 Mar; 8(3):2318-27. PubMed ID: 24484512 [TBL] [Abstract][Full Text] [Related]
18. Hydrogen plasma-mediated modification of the electrical transport properties of ZnO nanowire field effect transistors. Hong WK; Yoon J; Lee T Nanotechnology; 2015 Mar; 26(12):125202. PubMed ID: 25736097 [TBL] [Abstract][Full Text] [Related]
19. Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors. Sultan SM; Ditshego NJ; Gunn R; Ashburn P; Chong HM Nanoscale Res Lett; 2014; 9(1):517. PubMed ID: 25276107 [TBL] [Abstract][Full Text] [Related]
20. Photo-assisted hysteresis of electronic transport for ZnO nanowire transistors. Du Q; Ye J; Xu Z; Zhu S; Tang K; Gu S; Zheng Y Nanotechnology; 2018 Mar; 29(11):115204. PubMed ID: 29345248 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]