148 related articles for article (PubMed ID: 19466129)
1. Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals.
Lai CF; Chi JY; Kuo HC; Yen HH; Lee CE; Chao CH; Hsueh HT; Yeh WY
Opt Express; 2009 May; 17(11):8795-804. PubMed ID: 19466129
[TBL] [Abstract][Full Text] [Related]
2. The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.
Jang HW; Ryu SW; Yu HK; Lee S; Lee JL
Nanotechnology; 2010 Jan; 21(2):025203. PubMed ID: 19955615
[TBL] [Abstract][Full Text] [Related]
3. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
Seo YG; Baik KH; Song H; Son JS; Oh K; Hwang SM
Opt Express; 2011 Jul; 19(14):12919-24. PubMed ID: 21747444
[TBL] [Abstract][Full Text] [Related]
4. Diffracted transmission effects of GaN and polymer two-dimensional square-lattice photonic crystals.
Xiong C; Zhang B; Kang X; Dai T; Zhang G
Opt Express; 2009 Dec; 17(26):23684-9. PubMed ID: 20052079
[TBL] [Abstract][Full Text] [Related]
5. GaN nanostructure-based light emitting diodes and semiconductor lasers.
Viswanath AK
J Nanosci Nanotechnol; 2014 Feb; 14(2):1947-82. PubMed ID: 24749467
[TBL] [Abstract][Full Text] [Related]
6. Azimuthally isotropic irradiance of GaN-based light-emitting diodes with GaN microlens arrays.
Wu ML; Lee YC; Yang SP; Lee PS; Chang JY
Opt Express; 2009 Apr; 17(8):6148-55. PubMed ID: 19365437
[TBL] [Abstract][Full Text] [Related]
7. Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.
Chen JT; Lai WC; Kao YJ; Yang YY; Sheu JK
Opt Express; 2012 Feb; 20(5):5689-95. PubMed ID: 22418376
[TBL] [Abstract][Full Text] [Related]
8. Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure.
Diana FS; David A; Meinel I; Sharma R; Weisbuch C; Nakamura S; Petroff PM
Nano Lett; 2006 Jun; 6(6):1116-20. PubMed ID: 16771564
[TBL] [Abstract][Full Text] [Related]
9. High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters.
Kim SK; Lee JW; Ee HS; Moon YT; Kwon SH; Kwon H; Park HG
Opt Express; 2010 May; 18(11):11025-32. PubMed ID: 20588958
[TBL] [Abstract][Full Text] [Related]
10. Anisotropy of light extraction from GaN two-dimensional photonic crystals.
Lai CF; Chi JY; Kuo HC; Chao CH; Hsueh HT; Wang JF; Yeh WY
Opt Express; 2008 May; 16(10):7285-94. PubMed ID: 18545434
[TBL] [Abstract][Full Text] [Related]
11. Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.
Oh S; Shin KS; Kim SW; Lee S; Yu H; Cho S; Kim KK
J Nanosci Nanotechnol; 2013 May; 13(5):3696-9. PubMed ID: 23858930
[TBL] [Abstract][Full Text] [Related]
12. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.
Nguyen HP; Cui K; Zhang S; Djavid M; Korinek A; Botton GA; Mi Z
Nano Lett; 2012 Mar; 12(3):1317-23. PubMed ID: 22283508
[TBL] [Abstract][Full Text] [Related]
13. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ
Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974
[TBL] [Abstract][Full Text] [Related]
14. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
Zhao Y; Yan Q; Feezell D; Fujito K; Van de Walle CG; Speck JS; DenBaars SP; Nakamura S
Opt Express; 2013 Jan; 21 Suppl 1():A53-9. PubMed ID: 23389275
[TBL] [Abstract][Full Text] [Related]
15. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
Ryu JH; Kim HY; Kim HK; Katharria YS; Han N; Kang JH; Park YJ; Han M; Ryu BD; Ko KB; Suh EK; Hong CH
Opt Express; 2012 Apr; 20(9):9999-10003. PubMed ID: 22535092
[TBL] [Abstract][Full Text] [Related]
16. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
Kyaw Z; Zhang ZH; Liu W; Tan ST; Ju ZG; Zhang XL; Ji Y; Hasanov N; Zhu B; Lu S; Zhang Y; Sun XW; Demir HV
Opt Express; 2014 Jan; 22(1):809-16. PubMed ID: 24515040
[TBL] [Abstract][Full Text] [Related]
17. Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal.
Huang CY; Ku HM; Chao S
Opt Express; 2009 Dec; 17(26):23702-11. PubMed ID: 20052081
[TBL] [Abstract][Full Text] [Related]
18. Spontaneous emission in GaN/InGaN photonic crystal nanopillars.
David A; Benisty H; Weisbuch C
Opt Express; 2007 Dec; 15(26):17991-8004. PubMed ID: 19551097
[TBL] [Abstract][Full Text] [Related]
19. Photonic crystal film with three alternating layers for simultaneous R, G, B multi-mode photonic band-gaps.
Park B; Kim MN; Kim SW; Ho Park J
Opt Express; 2008 Sep; 16(19):14524-31. PubMed ID: 18794987
[TBL] [Abstract][Full Text] [Related]
20. White thin-film flip-chip LEDs with uniform color temperature using laser lift-off and conformal phosphor coating technologies.
Lin HT; Tien CH; Hsu CP; Horng RH
Opt Express; 2014 Dec; 22(26):31646-53. PubMed ID: 25607135
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
