164 related articles for article (PubMed ID: 19567947)
1. The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition.
Fu SF; Wang SM; Lee L; Chen CY; Tsai WC; Chou WC; Lee MC; Chang WH; Chen WK
Nanotechnology; 2009 Jul; 20(29):295702. PubMed ID: 19567947
[TBL] [Abstract][Full Text] [Related]
2. Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD.
Zhang B; Song H; Xu X; Liu J; Wang J; Liu X; Yang S; Zhu Q; Wang Z
Nanotechnology; 2011 Jun; 22(23):235603. PubMed ID: 21474875
[TBL] [Abstract][Full Text] [Related]
3. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
[TBL] [Abstract][Full Text] [Related]
4. One-step graphene coating of heteroepitaxial GaN films.
Choi JK; Huh JH; Kim SD; Moon D; Yoon D; Joo K; Kwak J; Chu JH; Kim SY; Park K; Kim YW; Yoon E; Cheong H; Kwon SY
Nanotechnology; 2012 Nov; 23(43):435603. PubMed ID: 23059535
[TBL] [Abstract][Full Text] [Related]
5. Transparent conducting oxides: texture and microstructure effects on charge carrier mobility in MOCVD-derived CdO thin films grown with a thermally stable, low-melting precursor.
Metz AW; Ireland JR; Zheng JG; Lobo RP; Yang Y; Ni J; Stern CL; Dravid VP; Bontemps N; Kannewurf CR; Poeppelmeier KR; Marks TJ
J Am Chem Soc; 2004 Jul; 126(27):8477-92. PubMed ID: 15238005
[TBL] [Abstract][Full Text] [Related]
6. Using seed particle composition to control structural and optical properties of GaN nanowires.
Zhou X; Chesin J; Crawford S; Gradečak S
Nanotechnology; 2012 Jul; 23(28):285603. PubMed ID: 22717518
[TBL] [Abstract][Full Text] [Related]
7. Nanometer-scale optical imaging of epitaxially grown GaN and InN islands using apertureless near-field microscopy.
Kim ZH; Liu B; Leone SR
J Phys Chem B; 2005 May; 109(17):8503-8. PubMed ID: 16851999
[TBL] [Abstract][Full Text] [Related]
8. Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films.
Ni J; Wang L; Yang Y; Yan H; Jin S; Marks TJ; Ireland JR; Kannewurf CR
Inorg Chem; 2005 Aug; 44(17):6071-6. PubMed ID: 16097827
[TBL] [Abstract][Full Text] [Related]
9. Structure-performance correlations in vapor phase deposited self-assembled nanodielectrics for organic field-effect transistors.
DiBenedetto SA; Frattarelli DL; Facchetti A; Ratner MA; Marks TJ
J Am Chem Soc; 2009 Aug; 131(31):11080-90. PubMed ID: 19606862
[TBL] [Abstract][Full Text] [Related]
10. Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate.
Kuo SY; Chen WC; Lai FI; Lin WT; Wang HY; Hsiao CN
J Nanosci Nanotechnol; 2012 Feb; 12(2):1620-3. PubMed ID: 22630014
[TBL] [Abstract][Full Text] [Related]
11. Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique.
Chen HJ; Yang DL; Huang TW; Yu IS
Nanoscale Res Lett; 2016 Dec; 11(1):241. PubMed ID: 27142879
[TBL] [Abstract][Full Text] [Related]
12. Fast electron transport in metal organic vapor deposition grown dye-sensitized ZnO nanorod solar cells.
Galoppini E; Rochford J; Chen H; Saraf G; Lu Y; Hagfeldt A; Boschloo G
J Phys Chem B; 2006 Aug; 110(33):16159-61. PubMed ID: 16913732
[TBL] [Abstract][Full Text] [Related]
13. Deposition of CuInS2 thin films using copper- and indium/sulfide-containing precursors through a two-stage MOCVD method.
Lee SS; Seo KW; Park JP; Kim SK; Shim IW
Inorg Chem; 2007 Feb; 46(3):1013-7. PubMed ID: 17257045
[TBL] [Abstract][Full Text] [Related]
14. The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires.
Paiman S; Gao Q; Tan HH; Jagadish C; Pemasiri K; Montazeri M; Jackson HE; Smith LM; Yarrison-Rice JM; Zhang X; Zou J
Nanotechnology; 2009 Jun; 20(22):225606. PubMed ID: 19436086
[TBL] [Abstract][Full Text] [Related]
15. Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source.
Chen JT; Hsiao CL; Hsu HC; Wu CT; Yeh CL; Wei PC; Chen LC; Chen KH
J Phys Chem A; 2007 Jul; 111(29):6755-9. PubMed ID: 17500542
[TBL] [Abstract][Full Text] [Related]
16. Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE.
Chen WC; Kuo SY; Wang WL; Tian JS; Lin WT; Lai FI; Chang L
Nanoscale Res Lett; 2012 Aug; 7(1):468. PubMed ID: 22908859
[TBL] [Abstract][Full Text] [Related]
17. Cathodoluminescence investigation of residual stress in Er3+:YAlO3 thin films grown on (110) SrTiO3 substrate by metal-organic chemical vapor deposition.
Toro RG; Malandrino G; Fragalà IL; Keshu W; Leto A; Pezzotti G
J Phys Chem B; 2006 Nov; 110(47):23977-81. PubMed ID: 17125366
[TBL] [Abstract][Full Text] [Related]
18. Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites.
Kadashchuk A; Schols S; Heremans P; Skryshevski Y; Piryatinski Y; Beinik I; Teichert C; Hernandez-Sosa G; Sitter H; Andreev A; Frank P; Winkler A
J Chem Phys; 2009 Feb; 130(8):084901. PubMed ID: 19256621
[TBL] [Abstract][Full Text] [Related]
19. Growth and characterization of V-shaped IrO(2) nanowedges via metal-organic vapor deposition.
Chen CA; Chen YM; Huang YS; Tsai DS; Tiong KK; Du CH
Nanotechnology; 2008 Nov; 19(46):465607. PubMed ID: 21836254
[TBL] [Abstract][Full Text] [Related]
20. High thermal stability of high indium content InGaN films grown by pulsed laser deposition.
Shen KC; Wang TY; Wuu DS; Horng RH
Opt Express; 2012 Sep; 20(19):21173-80. PubMed ID: 23037241
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]