146 related articles for article (PubMed ID: 19645459)
1. Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot.
Simmons CB; Thalakulam M; Rosemeyer BM; Van Bael BJ; Sackmann EK; Savage DE; Lagally MG; Joynt R; Friesen M; Coppersmith SN; Eriksson MA
Nano Lett; 2009 Sep; 9(9):3234-8. PubMed ID: 19645459
[TBL] [Abstract][Full Text] [Related]
2. Three-dimensional Si/Ge quantum dot crystals.
Grützmacher D; Fromherz T; Dais C; Stangl J; Müller E; Ekinci Y; Solak HH; Sigg H; Lechner RT; Wintersberger E; Birner S; Holý V; Bauer G
Nano Lett; 2007 Oct; 7(10):3150-6. PubMed ID: 17892317
[TBL] [Abstract][Full Text] [Related]
3. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.
Hu Y; Churchill HO; Reilly DJ; Xiang J; Lieber CM; Marcus CM
Nat Nanotechnol; 2007 Oct; 2(10):622-5. PubMed ID: 18654386
[TBL] [Abstract][Full Text] [Related]
4. Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures.
Ma Y; Huang S; Zeng C; Zhou T; Zhong Z; Zhou T; Fan Y; Yang X; Xia J; Jiang Z
Nanoscale; 2014 Apr; 6(8):3941-8. PubMed ID: 24173689
[TBL] [Abstract][Full Text] [Related]
5. X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor.
Hrauda N; Zhang J; Wintersberger E; Etzelstorfer T; Mandl B; Stangl J; Carbone D; Holý V; Jovanović V; Biasotto C; Nanver LK; Moers J; Grützmacher D; Bauer G
Nano Lett; 2011 Jul; 11(7):2875-80. PubMed ID: 21627099
[TBL] [Abstract][Full Text] [Related]
6. Pauli spin blockade in a highly tunable silicon double quantum dot.
Lai NS; Lim WH; Yang CH; Zwanenburg FA; Coish WA; Qassemi F; Morello A; Dzurak AS
Sci Rep; 2011; 1():110. PubMed ID: 22355627
[TBL] [Abstract][Full Text] [Related]
7. Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots.
Eenink HGJ; Petit L; Lawrie WIL; Clarke JS; Vandersypen LMK; Veldhorst M
Nano Lett; 2019 Dec; 19(12):8653-8657. PubMed ID: 31755273
[TBL] [Abstract][Full Text] [Related]
8. Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots.
Nassiopoulou AG; Olzierski A; Tsoi E; Berbezier I; Karmous A
J Nanosci Nanotechnol; 2007 Jan; 7(1):316-21. PubMed ID: 17455497
[TBL] [Abstract][Full Text] [Related]
9. 1300 nm wavelength InAs quantum dot photodetector grown on silicon.
Sandall I; Ng JS; David JP; Tan CH; Wang T; Liu H
Opt Express; 2012 May; 20(10):10446-52. PubMed ID: 22565669
[TBL] [Abstract][Full Text] [Related]
10. The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix.
Buljan M; Desnica UV; Drazić G; Ivanda M; Radić N; Dubcek P; Salamon K; Bernstorff S; Holý V
Nanotechnology; 2009 Feb; 20(8):085612. PubMed ID: 19417460
[TBL] [Abstract][Full Text] [Related]
11. Nanoscale distortions of Si quantum wells in Si/SiGe quantum-electronic heterostructures.
Evans PG; Savage DE; Prance JR; Simmons CB; Lagally MG; Coppersmith SN; Eriksson MA; Schülli TU
Adv Mater; 2012 Oct; 24(38):5217-21. PubMed ID: 22806921
[No Abstract] [Full Text] [Related]
12. Gate-defined graphene double quantum dot and excited state spectroscopy.
Liu XL; Hug D; Vandersypen LM
Nano Lett; 2010 May; 10(5):1623-7. PubMed ID: 20377196
[TBL] [Abstract][Full Text] [Related]
13. Gate-controlled charge transfer in Si:P double quantum dots.
Hudson FE; Ferguson AJ; Escott CC; Yang C; Jamieson DN; Clark RG; Dzurak AS
Nanotechnology; 2008 May; 19(19):195402. PubMed ID: 21825715
[TBL] [Abstract][Full Text] [Related]
14. Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate.
Benyoucef M; Lee HS; Gabel J; Kim TW; Park HL; Rastelli A; Schmidt OG
Nano Lett; 2009 Jan; 9(1):304-7. PubMed ID: 19067548
[TBL] [Abstract][Full Text] [Related]
15. Single electron charging in optically active nanowire quantum dots.
van Kouwen MP; Reimer ME; Hidma AW; van Weert MH; Algra RE; Bakkers EP; Kouwenhoven LP; Zwiller V
Nano Lett; 2010 May; 10(5):1817-22. PubMed ID: 20387798
[TBL] [Abstract][Full Text] [Related]
16. Polarization-selective plasmon-enhanced silicon quantum-dot luminescence.
Mertens H; Biteen JS; Atwater HA; Polman A
Nano Lett; 2006 Nov; 6(11):2622-5. PubMed ID: 17090102
[TBL] [Abstract][Full Text] [Related]
17. High-fidelity gates in quantum dot spin qubits.
Koh TS; Coppersmith SN; Friesen M
Proc Natl Acad Sci U S A; 2013 Dec; 110(49):19695-700. PubMed ID: 24255105
[TBL] [Abstract][Full Text] [Related]
18. Gate-defined quantum dots in intrinsic silicon.
Angus SJ; Ferguson AJ; Dzurak AS; Clark RG
Nano Lett; 2007 Jul; 7(7):2051-5. PubMed ID: 17567176
[TBL] [Abstract][Full Text] [Related]
19. Spin blockade and exchange in Coulomb-confined silicon double quantum dots.
Weber B; Tan YH; Mahapatra S; Watson TF; Ryu H; Rahman R; Hollenberg LC; Klimeck G; Simmons MY
Nat Nanotechnol; 2014 Jun; 9(6):430-5. PubMed ID: 24727686
[TBL] [Abstract][Full Text] [Related]
20. Calculation of vertical correlation probability in Ge/Si(001) shallow island quantum dot multilayer systems.
Makeev MA; Madhukar A
Nano Lett; 2006 Jun; 6(6):1279-83. PubMed ID: 16771594
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
