These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

212 related articles for article (PubMed ID: 19661581)

  • 1. Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications.
    Kim TH; Lee SY; Cho NK; Seong HK; Choi HJ; Jung SW; Lee SK
    Nanotechnology; 2006 Jul; 17(14):3394-9. PubMed ID: 19661581
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Characteristics of dielectrophoretically aligned UV-blue GaN nanowire LEDs.
    Kim TH; Lee SY; Kim HG; Kim SH; Hong CH; Hahn YB; Lee SK
    J Nanosci Nanotechnol; 2008 Jan; 8(1):268-73. PubMed ID: 18468070
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.
    Ra YH; Navamathavan R; Park JH; Lee CR
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):2111-7. PubMed ID: 23432423
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Tuning the electrical transport properties of n-type CdS nanowires via Ga doping and their nano-optoelectronic applications.
    Cai J; Jie J; Jiang P; Wu D; Xie C; Wu C; Wang Z; Yu Y; Wang L; Zhang X; Peng Q; Jiang Y
    Phys Chem Chem Phys; 2011 Aug; 13(32):14663-7. PubMed ID: 21709907
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate.
    Wierzbicka A; Zytkiewicz ZR; Kret S; Borysiuk J; Dluzewski P; Sobanska M; Klosek K; Reszka A; Tchutchulashvili G; Cabaj A; Lusakowska E
    Nanotechnology; 2013 Jan; 24(3):035703. PubMed ID: 23262581
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Synthesis of p-type GaN nanowires.
    Kim SW; Park YH; Kim I; Park TE; Kwon BW; Choi WK; Choi HJ
    Nanoscale; 2013 Sep; 5(18):8550-4. PubMed ID: 23892611
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor.
    Suehiro J; Nakagawa N; Hidaka S; Ueda M; Imasaka K; Higashihata M; Okada T; Hara M
    Nanotechnology; 2006 May; 17(10):2567-73. PubMed ID: 21727506
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Strain-release assembly of nanowires on stretchable substrates.
    Xu F; Durham JW; Wiley BJ; Zhu Y
    ACS Nano; 2011 Feb; 5(2):1556-63. PubMed ID: 21288046
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.
    Park JH; Kim MH; Kissinger S; Lee CR
    Nanoscale; 2013 Apr; 5(7):2959-66. PubMed ID: 23455517
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Quantitative analysis of parallel nanowire array assembly by dielectrophoresis.
    Papadakis SJ; Hoffmann JA; Deglau D; Chen A; Tyagi P; Gracias DH
    Nanoscale; 2011 Mar; 3(3):1059-65. PubMed ID: 21161112
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Enhanced DC-Operated Electroluminescence of Forwardly Aligned   p/MQW/n InGaN Nanorod LEDs via DC Offset-AC Dielectrophoresis.
    Eo YJ; Yoo GY; Kang H; Lee YK; Kim CS; Oh JH; Lee KN; Kim W; Do YR
    ACS Appl Mater Interfaces; 2017 Nov; 9(43):37912-37920. PubMed ID: 29019239
    [TBL] [Abstract][Full Text] [Related]  

  • 12. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates.
    Wu Y; Liu B; Li Z; Tao T; Xie Z; Wang K; Xiu X; Chen D; Lu H; Zhang R; Zheng Y
    Nanotechnology; 2020 Jan; 31(4):045604. PubMed ID: 31578003
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Dielectrophoretic assembly and characterization of individually suspended Ag, GaN, SnO(2) and Ga(2)O(3) nanowires.
    Seo HW; Han CS; Hwang SO; Park J
    Nanotechnology; 2006 Jul; 17(14):3388-93. PubMed ID: 19661580
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated electrodes.
    Baca AI; Brown JJ; Bertness KA; Bright VM
    Nanotechnology; 2012 Jun; 23(24):245301. PubMed ID: 22640980
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping.
    Tang YB; Bo XH; Xu J; Cao YL; Chen ZH; Song HS; Liu CP; Hung TF; Zhang WJ; Cheng HM; Bello I; Lee ST; Lee CS
    ACS Nano; 2011 May; 5(5):3591-8. PubMed ID: 21480640
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.
    Baratto C; Kumar R; Comini E; Faglia G; Sberveglieri G
    Opt Express; 2015 Jul; 23(15):18937-42. PubMed ID: 26367556
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Conducting properties of nearly depleted ZnO nanowire UV sensors fabricated by dielectrophoresis.
    García Núñez C; García Marín A; Nanterne P; Piqueras J; Kung P; Pau JL
    Nanotechnology; 2013 Oct; 24(41):415702. PubMed ID: 24045231
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Optical regulation of protein adsorption and cell adhesion by photoresponsive GaN nanowires.
    Li J; Han Q; Zhang Y; Zhang W; Dong M; Besenbacher F; Yang R; Wang C
    ACS Appl Mater Interfaces; 2013 Oct; 5(19):9816-22. PubMed ID: 24073887
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Optical and field emission properties of thin single-crystalline GaN nanowires.
    Ha B; Seo SH; Cho JH; Yoon CS; Yoo J; Yi GC; Park CY; Lee CJ
    J Phys Chem B; 2005 Jun; 109(22):11095-9. PubMed ID: 16852353
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.
    Musolino M; Tahraoui A; Fernández-Garrido S; Brandt O; Trampert A; Geelhaar L; Riechert H
    Nanotechnology; 2015 Feb; 26(8):085605. PubMed ID: 25656795
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.