These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

200 related articles for article (PubMed ID: 19713586)

  • 1. Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy.
    Vinaji S; Lochthofen A; Mertin W; Regolin I; Gutsche C; Prost W; Tegude FJ; Bacher G
    Nanotechnology; 2009 Sep; 20(38):385702. PubMed ID: 19713586
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures.
    Lysov A; Offer M; Gutsche C; Regolin I; Topaloglu S; Geller M; Prost W; Tegude FJ
    Nanotechnology; 2011 Feb; 22(8):085702. PubMed ID: 21242617
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Epitaxial core-shell and core-multishell nanowire heterostructures.
    Lauhon LJ; Gudiksen MS; Wang D; Lieber CM
    Nature; 2002 Nov; 420(6911):57-61. PubMed ID: 12422212
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.
    Tomioka K; Kobayashi Y; Motohisa J; Hara S; Fukui T
    Nanotechnology; 2009 Apr; 20(14):145302. PubMed ID: 19420521
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Distinct photocurrent response of individual GaAs nanowires induced by n-type doping.
    Xia H; Lu ZY; Li TX; Parkinson P; Liao ZM; Liu FH; Lu W; Hu WD; Chen PP; Xu HY; Zou J; Jagadish C
    ACS Nano; 2012 Jul; 6(7):6005-13. PubMed ID: 22724925
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electrical properties of individual ZnO nanowires.
    Sakurai M; Wang YG; Uemura T; Aono M
    Nanotechnology; 2009 Apr; 20(15):155203. PubMed ID: 19420542
    [TBL] [Abstract][Full Text] [Related]  

  • 7. In situ electron backscattered diffraction of individual GaAs nanowires.
    Prikhodko SV; Sitzman S; Gambin V; Kodambaka S
    Ultramicroscopy; 2008 Dec; 109(1):133-8. PubMed ID: 18996646
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Homogeneous core/shell ZnO/ZnMgO quantum well heterostructures on vertical ZnO nanowires.
    Cao BQ; Zúñiga-Pérez J; Boukos N; Czekalla C; Hilmer H; Lenzner J; Travlos A; Lorenz M; Grundmann M
    Nanotechnology; 2009 Jul; 20(30):305701. PubMed ID: 19584419
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Growth kinetics of heterostructured GaP-GaAs nanowires.
    Verheijen MA; Immink G; de Smet T; Borgström MT; Bakkers EP
    J Am Chem Soc; 2006 Feb; 128(4):1353-9. PubMed ID: 16433555
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Evidence of space charge regions within semiconductor nanowires from Kelvin probe force microscopy.
    Narváez AC; Chiaramonte T; Vicaro KO; Clerici JH; Cotta MA
    Nanotechnology; 2009 Nov; 20(46):465705. PubMed ID: 19843990
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.
    Boland JL; Casadei A; Tütüncüoglu G; Matteini F; Davies CL; Jabeen F; Joyce HJ; Herz LM; Fontcuberta I Morral A; Johnston MB
    ACS Nano; 2016 Apr; 10(4):4219-27. PubMed ID: 26959350
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effects of gold diffusion on n-type doping of GaAs nanowires.
    Tambe MJ; Ren S; Gradecak S
    Nano Lett; 2010 Nov; 10(11):4584-9. PubMed ID: 20939583
    [TBL] [Abstract][Full Text] [Related]  

  • 13. A growth interruption technique for stacking fault-free nanowire superlattices.
    Mohseni PK; LaPierre RR
    Nanotechnology; 2009 Jan; 20(2):025610. PubMed ID: 19417279
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions.
    Sun R; Jacobsson D; Chen IJ; Nilsson M; Thelander C; Lehmann S; Dick KA
    Nano Lett; 2015 Jun; 15(6):3757-62. PubMed ID: 25989532
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
    Plissard S; Dick KA; Larrieu G; Godey S; Addad A; Wallart X; Caroff P
    Nanotechnology; 2010 Sep; 21(38):385602. PubMed ID: 20798467
    [TBL] [Abstract][Full Text] [Related]  

  • 16. InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
    Caroff P; Messing ME; Mattias Borg B; Dick KA; Deppert K; Wernersson LE
    Nanotechnology; 2009 Dec; 20(49):495606. PubMed ID: 19904026
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Growth of doped silicon nanowires by pulsed laser deposition and their analysis by electron beam induced current imaging.
    Eisenhawer B; Zhang D; Clavel R; Berger A; Michler J; Christiansen S
    Nanotechnology; 2011 Feb; 22(7):075706. PubMed ID: 21233539
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires.
    Sanders A; Blanchard P; Bertness K; Brubaker M; Dodson C; Harvey T; Herrero A; Rourke D; Schlager J; Sanford N; Chiaramonti AN; Davydov A; Motayed A; Tsvetkov D
    Nanotechnology; 2011 Nov; 22(46):465703. PubMed ID: 22025018
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.
    Haas F; Sladek K; Winden A; von der Ahe M; Weirich TE; Rieger T; Lüth H; Grützmacher D; Schäpers T; Hardtdegen H
    Nanotechnology; 2013 Mar; 24(8):085603. PubMed ID: 23385879
    [TBL] [Abstract][Full Text] [Related]  

  • 20. New approach to local anodic oxidation of semiconductor heterostructures.
    Martaus J; Gregusová D; Cambel V; Kúdela R; Soltýs J
    Ultramicroscopy; 2008 Sep; 108(10):1086-9. PubMed ID: 18555609
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.