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2. Effects of growth conditions on the GaAs/AlAs superlattices by grazing incidence X-ray reflectivity. Ren L; Gao H; Yuan A J Nanosci Nanotechnol; 2013 Feb; 13(2):761-5. PubMed ID: 23646511 [TBL] [Abstract][Full Text] [Related]
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7. Nonequilibrium optical-phonon population by sequential resonant tunneling in GaAs-AlAs superlattices. Kwok SH; Ramsteiner M; Bertram D; Asche M; Grahn HT; Ploog K Phys Rev B Condens Matter; 1996 Mar; 53(12):R7634-R7637. PubMed ID: 9982285 [No Abstract] [Full Text] [Related]
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9. Electronic states in GaAs-AlAs lateral-surface superlattices produced by deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates. Sun H Phys Rev B Condens Matter; 1992 Nov; 46(19):12371-12376. PubMed ID: 10003151 [No Abstract] [Full Text] [Related]
10. High-order resonant Raman scattering by combinations and overtones of interface phonons in GaAs-AlAs short-period superlattices. Meynadier MH; Finkman E; Sturge MD; Worlock JM; Tamargo MC Phys Rev B Condens Matter; 1987 Feb; 35(5):2517-2520. PubMed ID: 9941717 [No Abstract] [Full Text] [Related]
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