355 related articles for article (PubMed ID: 19893156)
1. Structural and electrical characterization of ohmic contacts to graphitized silicon carbide.
Maneshian MH; Lin MT; Diercks D; Shepherd ND
Nanotechnology; 2009 Dec; 20(49):495703. PubMed ID: 19893156
[TBL] [Abstract][Full Text] [Related]
2. Nucleation of epitaxial graphene on SiC(0001).
Robinson J; Weng X; Trumbull K; Cavalero R; Wetherington M; Frantz E; Labella M; Hughes Z; Fanton M; Snyder D
ACS Nano; 2010 Jan; 4(1):153-8. PubMed ID: 20000439
[TBL] [Abstract][Full Text] [Related]
3. Investigations of niobium carbide contact for carbon-nanotube-based devices.
Huang L; Chor EF; Wu Y; Guo Z
Nanotechnology; 2010 Mar; 21(9):095201. PubMed ID: 20110580
[TBL] [Abstract][Full Text] [Related]
4. Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors.
Jang CO; Kim TH; Lee SY; Kim DJ; Lee SK
Nanotechnology; 2008 Aug; 19(34):345203. PubMed ID: 21730641
[TBL] [Abstract][Full Text] [Related]
5. Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires.
Motayed A; Bonevich JE; Krylyuk S; Davydov AV; Aluri G; Rao MV
Nanotechnology; 2011 Feb; 22(7):075206. PubMed ID: 21233538
[TBL] [Abstract][Full Text] [Related]
6. Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.
Łaszcz A; Katcki J; Ratajczak J; Tang X; Dubois E
J Microsc; 2006 Oct; 224(Pt 1):38-41. PubMed ID: 17100902
[TBL] [Abstract][Full Text] [Related]
7. Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for gan-based optoelectronic devices.
Himmerlich M; Koufaki M; Ecke G; Mauder C; Cimalla V; Schaefer JA; Kondilis A; Pelekanos NT; Modreanu M; Krischok S; Aperathitis E
ACS Appl Mater Interfaces; 2009 Jul; 1(7):1451-6. PubMed ID: 20355948
[TBL] [Abstract][Full Text] [Related]
8. The role of oxygen at the interface between titanium and carbon nanotubes.
Felten A; Suarez-Martinez I; Ke X; Van Tendeloo G; Ghijsen J; Pireaux JJ; Drube W; Bittencourt C; Ewels CP
Chemphyschem; 2009 Aug; 10(11):1799-804. PubMed ID: 19472267
[TBL] [Abstract][Full Text] [Related]
9. Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC.
Frazzetto A; Giannazzo F; Lo Nigro R; Di Franco S; Bongiorno C; Saggio M; Zanetti E; Raineri V; Roccaforte F
Nanoscale Res Lett; 2011 Feb; 6(1):158. PubMed ID: 21711667
[TBL] [Abstract][Full Text] [Related]
10. Oxide and carbide formation at titanium/organic monolayer interfaces.
Blackstock JJ; Donley CL; Stickle WF; Ohlberg DA; Yang JJ; Stewart DR; Williams RS
J Am Chem Soc; 2008 Mar; 130(12):4041-7. PubMed ID: 18318537
[TBL] [Abstract][Full Text] [Related]
11. Diamond-metal contacts: interface barriers and real-time characterization.
Evans DA; Roberts OR; Williams GT; Vearey-Roberts AR; Bain F; Evans S; Langstaff DP; Twitchen DJ
J Phys Condens Matter; 2009 Sep; 21(36):364223. PubMed ID: 21832329
[TBL] [Abstract][Full Text] [Related]
12. Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.
Spera M; Greco G; Corso D; Di Franco S; Severino A; Messina AA; Giannazzo F; Roccaforte F
Materials (Basel); 2019 Oct; 12(21):. PubMed ID: 31652698
[TBL] [Abstract][Full Text] [Related]
13. Microstructural and compositional analysis of strontium-doped lead zirconate titanate thin films on gold-coated silicon substrates.
Sriram S; Bhaskaran M; Mitchell DR; Short KT; Holland AS; Mitchell A
Microsc Microanal; 2009 Feb; 15(1):30-5. PubMed ID: 19144255
[TBL] [Abstract][Full Text] [Related]
14. Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers.
Łaszcz A; Czerwinski A; Ratajczak J; Szerling A; Phillipp F; Van Aken PA; Katcki J
J Microsc; 2010 Mar; 237(3):347-51. PubMed ID: 20500394
[TBL] [Abstract][Full Text] [Related]
15. Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition.
Cheng Q; Xu S; Long J; Huang S; Guo J
Nanotechnology; 2007 Nov; 18(46):465601. PubMed ID: 21730481
[TBL] [Abstract][Full Text] [Related]
16. Effect of substrate surface reconstruction on interaction with adsorbates: Pt on 6H-SiC(0001).
Wang Z; Fu Q; Bao X
Langmuir; 2010 May; 26(10):7227-32. PubMed ID: 20131917
[TBL] [Abstract][Full Text] [Related]
17. Growth dynamics and kinetics of monolayer and multilayer graphene on a 6H-SiC(0001) substrate.
Poon SW; Chen W; Wee AT; Tok ES
Phys Chem Chem Phys; 2010 Nov; 12(41):13522-33. PubMed ID: 20856951
[TBL] [Abstract][Full Text] [Related]
18. Graphene/3C-SiC Hybrid Nanolaminate.
Zhuang H; Yang B; Heuser S; Huang N; Fu H; Jiang X
ACS Appl Mater Interfaces; 2015 Dec; 7(51):28508-17. PubMed ID: 26650041
[TBL] [Abstract][Full Text] [Related]
19. High-temperature stability of silicon carbide nanowires.
Shim HW; Kuppers JD; Huang H
J Nanosci Nanotechnol; 2008 Aug; 8(8):3999-4002. PubMed ID: 19049165
[TBL] [Abstract][Full Text] [Related]
20. Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating.
Cogan SF; Edell DJ; Guzelian AA; Ping Liu Y; Edell R
J Biomed Mater Res A; 2003 Dec; 67(3):856-67. PubMed ID: 14613234
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
